FLM1011-3F X, Ku-Band Internally Matched FET FEATURES * * * * * * * High Output Power: P1dB = 35.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: hadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed DESCRIPTION The FLM1011-3F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 25.0 W Total Power Dissipation Tc = 25C PT Storage Temperature Tstg -65 to +175 C Channel Temperature Tch 175 C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 13.0 and -1.4 mA respectively with gate resistance of 100W. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Saturated Drain Current Symbol IDSS Test Conditions Min. Limit Typ. Max. Unit VDS = 5V, VGS = 0V - 1400 2100 mA Transconductance gm VDS = 5V, IDS = 900mA - 1300 - mS Pinch-off Voltage Vp VDS = 5V, IDS = 70mA -0.5 -1.5 -3.0 V IGS = -70A -5.0 - - V 34.0 35.0 - dBm 6.5 7.5 - dB - 900 1100 mA - 29 - % - - 0.6 dB -44 -46 - dBc - 5.0 6.0 C/W - - 66 C Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Drain Current Power-Added Efficiency Idsr hadd Gain Flatness AEG 3rd Order Intermodulation Distortion IM3 Thermal Resistance Rth Channel Temperature Rise AETch VDS = 10V f = 10.7 ~ 11.7 GHz IDS @ 0.65 IDSS(Typ.) ZS = ZL = 50W f = 11.7GHz, AEf = 10MHz 2-Tone Test Pout = 24.0dBm S.C.L. Channel to Case 10V x Idsr x Rth CASE STYLE: IA Edition 1.2 August 1999 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level 1 FLM1011-3F X, Ku-Band Internally Matched FET POWER DERATING CURVE OUTPUT POWER & IM3 vs. INPUT POWER 31 24 18 12 6 0 50 100 150 200 29 VDS=10V f1 = 11.7 GHz f2 = 11.71 GHz 2-tone test 27 -15 Pout 25 -25 23 -35 IM3 21 -45 19 -55 Case Temperature (C) 12 14 16 18 20 22 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. FREQUENCY Pin=28dBm 26dBm 34 33 24dBm 32 31 22dBm VDS=10V f = 11.2 GHz 34 Pout 32 40 30 30 28 20 hadd 26 10 30 10.7 10.95 11.2 11.45 11.7 19 Frequency (GHz) 21 23 25 27 Input Power (dBm) 2 29 hadd (%) 35 36 Output Power (dBm) Output Power (dBm) 37 VDS=10V P1dB 36 OUTPUT POWER vs. INPUT POWER IM3 (dBc) Output Power (S.C.L.) (dBm) Total Power Dissipation (W) 30 FLM1011-3F X, Ku-Band Internally Matched FET S11 S22 0.2 +j100 +j25 10.7 10.9 10.5 GHz +j10 11.1 11.9 10.9 0 20 11.9 11.3 50W 10.7 180 250 11.7 11.7 11.7 11.1 -j250 10.7 4 10.7 11.1 10.9 -j100 -j50 FREQUENCY (MHZ) 3 10.5 GHz 10.9 11.3 -j25 2 11.3 11.5 11.9 SCALE FOR |S21| 1 11.5 10.5 GHz 11.5 10.5 GHz -j10 11.9 11.7 11.1 10 0.1 +j250 11.5 11.3 S21 S12 +90 SCALE FOR |S12| +j50 -90 S11 S-PARAMETERS VDS = 10V, IDS = 900mA S21 S12 MAG ANG MAG ANG MAG ANG S22 MAG ANG 10500 .606 127.5 2.381 -45.7 .045 -34.6 .500 -144.6 10600 .586 118.0 2.475 -54.3 .047 -47.4 .491 -154.2 10700 .556 107.5 2.574 -63.8 .050 -64.6 .474 -165.0 10800 .532 96.4 2.663 -73.4 .053 -76.4 .466 -175.9 10900 .493 84.3 2.767 -83.3 .058 -98.2 .452 172.4 11000 .457 71.3 2.859 -94.1 .064 -110.4 .442 159.8 11100 .413 55.9 2.929 -105.0 .070 -126.2 .430 146.9 11200 .375 38.7 2.984 -116.4 .075 -137.1 .424 133.6 11300 .333 19.7 2.995 -127.8 .081 -151.9 .411 120.4 11400 .301 -3.4 2.992 -139.6 .086 -164.5 .394 106.6 11500 .291 -28.4 2.935 -151.4 .089 -177.0 .375 92.5 11600 .297 -51.8 2.861 -162.7 .093 171.1 .361 79.1 11700 .320 -74.6 2.776 -173.8 .096 157.2 .341 65.6 11800 .354 -93.8 2.681 175.3 .097 147.3 .320 50.6 11900 .399 -109.4 2.565 164.8 .099 134.2 .305 37.7 3 0 FLM1011-3F X, Ku-Band Internally Matched FET 1.5 Min. (0.059) Case Style "IA" Metal-Ceramic Hermetic Package 1 0.1 (0.004) 9.70.15 (0.382) 2-R 1.250.15 (0.049) 4 2 3 1.80.15 (0.071) 1.5 Min. (0.059) 0.5 (0.020) 3.2 Max. (0.126) 13.00.15 (0.512) 1.15 (0.045) 0.2 Max. (0.008) 8.1 (0.319) 1. 2. 3. 4. Gate Source (Flange) Drain Source (Flange) Unit: mm(inches) 16.50.15 (0.650) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0599M200 4