1
Edition 1.2
August 1999
FLM1011-3F
X, Ku-Band Internally Matched FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
25.0
-65 to +175
175
Tc = 25¡C
V
V
W
¡C
¡C
PT
Tstg
Tch
Condition Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25¡C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 13.0 and -1.4 mA respectively with
gate resistance of 100W.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS - 1400 2100
-0.5 -1.5 -3.0
34.0 35.0 -
6.5 7.5 -
VDS = 5V, IDS = 70mA
VDS = 5V, IDS = 900mA
VDS = 5V, VGS = 0V
IGS = -70µA
VDS = 10V
f = 10.7 ~ 11.7 GHz
IDS @ 0.65 IDSS(Typ.)
ZS = ZL = 50W
mA
V
- 1300 -mS
-5.0 - - V
dB
dBm
gm
Vp
VGSO
P1dB
G1dB
Drain Current - 900 1100 mAIdsr
Power-Added Efficiency -29- %
h
add
Gain Flatness --±0.6 dB
ÆG
Thermal Resistance Channel to Case - 5.0 6.0 ¡C/W
CASE STYLE: IA
Rth
3rd Order Intermodulation
Distortion
f = 11.7GHz, Æf = 10MHz
2-Tone Test
Pout = 24.0dBm S.C.L. -44 -46 - dBc
IM3
Test Conditions Unit
Limit
Typ. Max.Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25¡C)
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
10V x Idsr x Rth
Channel Temperature Rise --66 ¡C
ÆTch
DESCRIPTION
The FLM1011-3F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
• High Output Power: P1dB = 35.0dBm (Typ.)
• High Gain: G1dB = 7.5dB (Typ.)
• High PAE: hadd = 29% (Typ.)
• Low IM3= -46dBc@Po = 24.0dBm
• Broad Band: 10.7 ~ 11.7GHz
• Impedance Matched Zin/Zout = 50W
• Hermetically Sealed
2
FLM1011-3F
X, Ku-Band Internally Matched FET
POWER DERATING CURVE
500 100 150 200
Case Temperature (¡C)
24
30
18
12
6
Total Power Dissipation (W)
OUTPUT POWER & IM3 vs. INPUT POWER
161412 18 20 22
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
23
25
27
29
31
21
-55
-45
-25
-15
-35
Output Power (S.C.L.) (dBm)
IM3
IM3 (dBc)
VDS=10V
f1 = 11.7 GHz
f2 = 11.71 GHz
2-tone test
19
Pout
OUTPUT POWER vs. FREQUENCY
Pin=28dBm
26dBm
24dBm
22dBm
10.7 10.95 11.2 11.45 11.7
Frequency (GHz)
30
31
32
33
34
35
36
37
Output Power (dBm)
VDS=10V
P1dB
OUTPUT POWER vs. INPUT POWER
VDS=10V
f = 11.2 GHz
19 21 23 25 27 29
Input Power (dBm)
28
30
32
34
36
26
20
10
30
40
Output Power (dBm)
hadd
Pout
hadd (%)
3
FLM1011-3F
X, Ku-Band Internally Matched FET
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180¡
+90¡
0¡
-90¡
S21
S12
SCALE FOR |S21|
SCALE FOR |S12|
0.2
0.1
250
50W
10 20 1 2 3 4
11.7
11.7
11.9
11.9
11.3
11.3
10.5 GHz
10.5 GHz
10.7
10.7
10.9
10.9
11.1
11.1
11.5
11.5
11.7
11.7
11.9
11.9 11.3
11.3
10.5 GHz
10.5 GHz
10.7
10.7
10.9
10.9
11.1
11.1
11.5
11.5
S-PARAMETERS
VDS = 10V, IDS = 900mA
FREQUENCY S11 S21 S12 S22
(MHZ) MAG ANG MAG ANG MAG ANG MAG ANG
10500 .606 127.5 2.381 -45.7 .045 -34.6 .500 -144.6
10600 .586 118.0 2.475 -54.3 .047 -47.4 .491 -154.2
10700 .556 107.5 2.574 -63.8 .050 -64.6 .474 -165.0
10800 .532 96.4 2.663 -73.4 .053 -76.4 .466 -175.9
10900 .493 84.3 2.767 -83.3 .058 -98.2 .452 172.4
11000 .457 71.3 2.859 -94.1 .064 -110.4 .442 159.8
11100 .413 55.9 2.929 -105.0 .070 -126.2 .430 146.9
11200 .375 38.7 2.984 -116.4 .075 -137.1 .424 133.6
11300 .333 19.7 2.995 -127.8 .081 -151.9 .411 120.4
11400 .301 -3.4 2.992 -139.6 .086 -164.5 .394 106.6
11500 .291 -28.4 2.935 -151.4 .089 -177.0 .375 92.5
11600 .297 -51.8 2.861 -162.7 .093 171.1 .361 79.1
11700 .320 -74.6 2.776 -173.8 .096 157.2 .341 65.6
11800 .354 -93.8 2.681 175.3 .097 147.3 .320 50.6
11900 .399 -109.4 2.565 164.8 .099 134.2 .305 37.7
4
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0599M200
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
FLM1011-3F
X, Ku-Band Internally Matched FET
2-R 1.25±0.15
(0.049)
0.5
(0.020)
8.1
(0.319)
13.0±0.15
(0.512)
16.5±0.15
(0.650)
3.2 Max.
(0.126)
1.8±0.15
(0.071)
0.1
(0.004)
9.7±0.15
(0.382) 1.5 Min.
(0.059)
1.5 Min.
(0.059)
1.15
(0.045)
0.2 Max.
(0.008)
Case Style "IA"
Metal-Ceramic Hermetic Package
Unit: mm(inches)
1. Gate
2. Source (Flange)
3. Drain
4. Source (Flange)
1
2
3
4
