7LL082b OOb7459 T3b MPHIN BC264A to D N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; in- tended for hi-fi amplifiers and other audio-frequency equipment. QUICK REFERENCE DATA Drain-source voltage =Vps max. 30 V Total power dissipation up to Tamp = 75 OC Prot max. 300 mW Junction temperature Tj max. 150 C Drain current Vps = 15 Vi Veg =0 Ipss 2to12 mA Transfer admittance (common source) Vps = 15 V: Vag = 0;f = 1 kHz |Ys| typ. 3,5 mS Noise figure at Vpg = 15 V; Vag = 0 f=1kHz; Rg = 1MQ F < 2 dB MECHANICAL DATA Dimensions in mm Fig. 1 TO-92 variant. Pinning: 1= drain 2 = source 3 = gate Er! . TI J o.40 MBBI14 XQ q min 5,2max 12,7min i 0,49 48 max mie a 7270834,2 diameter within 2,5 max is uncontrolled ~ Note: Drain and source are interchangeable December 1990 51af - MB 721082b OOL74L0 758 MPHIN BC264A to D J RATINGS Limiting values in accordance with the Absolute Maximum System (IEC134) Drain -source voltage Vps max, 30 Vv Drain -gate voltage (open source) Vpco max, 30 Vv Gate -source voltage (open drain) -Vcso max, 30 Vv Gate current Ig max, 10 mA Total power dissipation up to T,,., = 75 C Prot max. 300 mW Storage temperature range T stg -65 to +150 C Junction temperature Tj max. 150 oC THERMAL RESISTANCE From junction to ambient in free air Reh j-a = 250 K/W 52 December 1990ME 7110826 OOb74G) 694 MEPHIN- N-channel silicon field-effect transistors BC264A to D CHARACTERISTICS Tj = 25 C unless otherwise specified Gate cut-off current BC264A | B |C j{ D -Vos = 20 V; Vps =0 -Icess < 5; 57] 5 5 nA Drain current > 2,0 13,5 [5,0] 7,0 mA VDs = 15 V; Ves = 0 Dss < 4,5 6,5 }8,0]12,0 mA Gate-source breakdown voltage -Ig = 1}A; Vps = 0 -V(BR)GSS > 30; 30] 30] 30 V Gate-source voltage Ip = 200 pA ; Vps = 15 V -Vas > 0,4 10,4 10,4] 0.4 V > _ _ Ip = 1,0 mA; Vpg = 15 V -Vos STIL y o \ > _ Ip = 1,5 mA; Vpsg = 15 V -VcGs z _ re a \ > - | |0, - Ip = 2,5 mA; Vpg = 15 V -VGs < fe _ v > -{-{- | 0,6 V Ip = 3,5 mA; Vps = I5V -VeEs < _ _ _ 1,6 Vv Gate-source cut-off voltage Ip= 10nA;Vps=15V -V(P)GS > 0,5 0,510.5} 0.5 V y-parameters at Tamb = 25 C Vps = 15 V; Ves = 0; f= 1 kHz Transfer admittance | yes| > 2,5 }3,0 13,5] 4,0 mS SS Vps = 15 V; -Vesg =1V;f=1 MHz Input capacitance Cis typ. 4.0 pF Feedback capacitance Crs typ. 1,2 pF Output capacitance Cos typ. 1,6 pF Noise figure at f = 1 kHz; Rg = 1 MQ _ x typ. 0,5 dB Vps = 15 V; Vos = 0: Tamb = 25 C F < 2 aB Equivalent noise voltage at Tamb = 25 C Vps = 15 V: Vag = 0: f = 10 Hz Vn/VB typ. 40 xnv/Vuz December 1990 53iL 7110626 OOb74be2 S20 MPHIN "BC264A to D JL 15 typical behaviour of Ip versus -Vas and Vps Ip typ. values (mA) is Ty 25 C 10 5 0 4 -Vas(V) 2 0 10 Vpg(V) = 20 Fig. 2 10 7Z671 10 Ip ry. venes DS= (mA) Tj=25 9C Tds on (k&2) 1 1 1071 typ. values Vps=9 f=1kHz Tamb= 20 CC 10-2 10-1 0 1 2 3 4 Vos (V) -V Vv . ~YGS Fig. 3 cs ) Fig, 4 54 December 1990ME 7110826 OOb74639 4b? BPHIN N-channel silicon field-effect transistors BC264A to D 1 Mts! typ. values ; : (mA/V) Vpg=15V f=1kHz 7,5 Tamb=25 C 5 pc264c +_|_BC264) 2,5 0 0 2,5 5 7,5 10 12,5 Ip (mA) 15 6 72671 ron typ. values is -Vos=2V . GS (pF) f=1 MHz Tamb= 25 C 4 2 0 0 5 -Vos(V) 10 0 10 Vps (V) =. 20 Fig. 6 Fig. 7 December 1990 55il 7410826 OOb74b4 3T3 mm PHIN "BC264A to D ) L 20 F (dB) 15 10 5 0 1 10 102 103 Rg (kQ) ~104 Fig. 8 20 F (dB) typ. values Vps=15V 15 -Vag=1v Tamb = 25 C 10 5 0 10 102 103 104 f (Hz) 105 56 December ow (