2N7002@215 - NEXPERIA - Datasheet.Live

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using

Trench MOSFET technology.

1.2 Features and benefits

Suitable for logic level gate drive

sources

Very fas t switching

Surface-moun te d package

Trench MOSFET technology

1.3 Applications

Logic level translators High-speed line drivers

1.4 Quick reference data

2. Pinning information

2N7002

60 V, 300 mA N-channel Trench MOSFET

Rev. 7 — 8 September 2011 Product data sheet

SOT23

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage 25 °C ≤Tj≤150°C --60V

IDdrain current VGS =10V; T

sp =25°C; see Figure 1;

see Figure 3 - - 300 mA

Ptot total power dissipation Tsp =25°C; see Figure 2 --0.83W

Static characteristics

RDSon drain-source on-state

resistance VGS =10V; I

D=500mA; T

j=25°C;

see Figure 6 ; see Figure 8 -2.85Ω

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic sym bol

1 G gate

SOT23 (TO-236AB)

2Ssource

3 D drain

mbb076

Product data sheet Rev. 7 — 8 September 2011 2 of 13

NXP Semiconductors 2N7002

60 V, 300 mA N-channel Trench MOSFET

3. Ordering information

4. Marking

[1] % = placeholder for manufacturing site code

5. Limiting values

Table 3. Ordering information

Type number Package

Name Description Version

2N7002 TO-236AB plastic surface-mounted package; 3 leads SOT23

Table 4. Marking codes

Type number Marking code[1]

2N7002 12%

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage 25 °C ≤Tj≤150 °C - 60 V

VDGR drain-gate voltage 25 °C ≤Tj≤150 °C; RGS =20kΩ-60V

VGS gate-source voltage -30 30 V

VGSM peak gate-source voltage pulsed; tp≤50 µs; δ= 0.25 -40 40 V

IDdrain current VGS =10V; T

sp =25°C; see Figure 1;

see Figure 3 - 300 mA

VGS =10V; T

sp = 100 °C; see Figure 1 - 190 mA

IDM peak drain current pulsed; tp≤10 µs; Tsp =25°C; see

Figure 3 -1.2A

Ptot total power dissipation Tsp =25°C; see Figure 2 -0.83W

Tjjunction temperature -65 150 °C

Tstg storage temperature -65 150 °C

Source-drain diode

ISsource current Tsp = 25 °C - 300 mA

ISM peak source current pulsed; tp≤10 µs; Tsp =25°C - 1.2 A

Product data sheet Rev. 7 — 8 September 2011 3 of 13

NXP Semiconductors 2N7002

60 V, 300 mA N-channel Trench MOSFET

Fig 1. Normalized continuous drain curre nt as a

function of solde r point temperature Fig 2. Normalized total po we r dissi pa tio n as a

function of solder point temperature

Fig 3. Safe operating area; continous and peak drain currents as a function of drain-source vo ltage

Tsp (°C)

0 20015050 100

03aa25

120

Ider

(%)

Tsp (°C)

0 20015050 100

03aa17

120

Pder

(%)

003aab350

-2

-1

1 10 10

(V)

(A)

DC 1 ms

100 µs

Lim it R

DSon

= V

/ I

10 ms

100 ms

10 µs

Product data sheet Rev. 7 — 8 September 2011 4 of 13

NXP Semiconductors 2N7002

60 V, 300 mA N-channel Trench MOSFET

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance

from junction to

ambient

Mounted on a printed-circuit board;

minimum footprint ; vertical in still air - - 350 K/W

Rth(j-sp) thermal resistance

from junction to solder

point

see Figure 4 - - 150 K/W

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration

003aab351

-5

-4

-3

-2

-1

1 10

(s)

th(j-sp)

(K/W)

single pulse

0.2

0.1

0.05

δ =

0.5

0.02

tpT

δ =

Product data sheet Rev. 7 — 8 September 2011 5 of 13

NXP Semiconductors 2N7002

60 V, 300 mA N-channel Trench MOSFET

7. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source

breakdown voltage ID=10µA; V

GS =0V; T

j=25°C 60--V

ID=10µA; V

GS =0V; T

j= -55 °C 55 - - V

VGSth gate-source threshold

voltage ID=0.25mA; V

DS =V

GS; Tj=25°C;

see Figure 9; see Figure 10 122.5V

ID=0.25mA; V

DS =V

GS; Tj=150°C;

see Figure 9; see Figure 10 0.6--V

ID=0.25mA; V

DS =V

GS; Tj=-55°C;

see Figure 9; see Figure 10 --2.75V

IDSS drain leakage current VDS =48V; V

GS =0V; T

j= 25 °C - 0.01 1 µA

VDS =48V; V

GS =0V; T

j=150°C --10µA

IGSS gate leakage current VGS =15V; V

DS =0V; T

j= 25 °C - 10 100 nA

VGS =-15V; V

DS =0V; T

j= 25 °C - 10 100 nA

RDSon drain-source on-state

resistance VGS =10V; I

D=500mA; T

j=25°C;

see Figure 6 ; see Figure 8 -2.85Ω

VGS =10V; I

D=500mA; T

j= 150 °C;

see Figure 6 ; see Figure 8 --9.25Ω

VGS =4.5V; I

D=75mA; T

j=25°C; see

Figure 6; see Figure 8 -3.85.3Ω

Dynamic character istics

Ciss input capacitance VDS =10V; f=1MHz; V

GS =0V;

Tj=25°C - 3150pF

Coss output capacitance - 6.8 30 pF

Crss reverse transfer

capacitance - 3.5 10 pF

ton turn-on time VGS =10V; V

DS =50V; R

L= 250 Ω;

RG(ext) =50Ω; RGS =50Ω

- 2.5 10 ns

toff turn-off time - 11 15 ns

Source-drain diode

VSD source-drain voltage IS=300mA; V

GS =0V; T

j=25°C; see

Figure 11 - 0.85 1.5 V

Qrrecovered charge VGS =0V; I

S= 300 mA;

dIS/dt = -100 A/µs -30-nC

trr reverse recovery time - 30 - ns

Product data sheet Rev. 7 — 8 September 2011 6 of 13

NXP Semiconductors 2N7002

60 V, 300 mA N-channel Trench MOSFET

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function

of drain current; typical values

Fig 7. Transfer characteristics: drain current as a

function of gate-source voltage; typical values Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature

003aab352

0.2

0.4

0.6

0.8

01234

(V)

(A)

10 5

4.5

3.5V

(V) =

003aab353

2000

4000

6000

8000

10000

0 0.2 0.4 0.6 0.8 1

(A)

DSon

(mΩ)

4.5

(V) =

003aab354

0.2

0.4

0.6

0.8

0246

(V)

(A)

= 150 °C25 °C

Tj (°C)

−60 180120060

03aa28

1.2

0.6

1.8

2.4

Product data sheet Rev. 7 — 8 September 2011 7 of 13

NXP Semiconductors 2N7002

60 V, 300 mA N-channel Trench MOSFET

Fig 9. Gate-source threshold voltage as a function of

junction temperature Fig 10. Sub-threshold drain current as a function of

gate-source voltage

Fig 11. Source current as a function of sour ce -d ra in

voltage; typical values Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

003aab101

-60 0 60 120 180

Tj (°C)

VGS(th)

(V)

min

typ

max

003aab100

10-6

10-5

10-4

10-3

0123

VGS (V)

(A)

min typ max

003aab356

0.2

0.4

0.6

0.8

0.2 0.4 0.6 0.8 1

(V)

(A)

= 25 °C

150 °C

003aab357

-1

1 10 10

(V)

(pF) C

iss

rss

oss

Product data sheet Rev. 7 — 8 September 2011 8 of 13

NXP Semiconductors 2N7002

60 V, 300 mA N-channel Trench MOSFET

8. Package outline

Fig 13. Package outline SOT23 (TO-236AB)

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT23

Product data sheet Rev. 7 — 8 September 2011 9 of 13

NXP Semiconductors 2N7002

60 V, 300 mA N-channel Trench MOSFET

9. Soldering

Fig 14. Reflow soldering footprint for SOT23 (TO-236AB)

Fig 15. Wave soldering footprint for SOT23 (TO-236AB)

solder lands

solder resist

occupied area

solder paste

sot023_fr

0.5

(3×)

0.6

(3×)

0.6

(3×)

0.7

(3×)

3.3

2.9

1.7

1.9

Dimensions in mm

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot023_fw

2.8

4.5

1.4

4.6

1.4

(2×)

1.2

(2×)

2.2

2.6

Dimensions in mm

Product data sheet Rev. 7 — 8 September 2011 10 of 13

NXP Semiconductors 2N7002

60 V, 300 mA N-channel Trench MOSFET

10. Revision history

Table 8. Revision history

Document ID Release date Data sheet status Change notice Supersedes

2N7002 v.7 20110908 Product data sheet - 2N7002 v.6

Modifications: •The format of this data sheet has been redesigned to comply with the new identity guidelines

of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

2N7002 v.6 20060428 Product data sheet 2N7002 v.5

2N7002 v.5 20051115 Product data sheet 2N7002 v.4

2N7002 v.4 20050426 Product data sheet 2N7002 v.3

2N7002 v.3 20000727 Product specification HZG336 2N7002 v.2

2N7002 v.2 19970617 Product specification 2N7002 v.1

2N7002 v.1 19901031 Product specification - -

Product data sheet Rev. 7 — 8 September 2011 11 of 13

NXP Semiconductors 2N7002

60 V, 300 mA N-channel Trench MOSFET

11. Legal information

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[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The p r oduct status of device(s) described in this document may have chan ged since th is document w as published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

11.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modificati ons or additions.

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the accuracy or completeness of informati on included herein and shall have

no liability for the consequences of use of such info rmation.

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product data given in the Limiting values and Characteristics sections of this

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representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

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accepts no liability for any assistance with applications or customer product

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Semiconductors product is suit able and fit for the custome r’s applications and

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Document status [1] [2] Product status [3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 7 — 8 September 2011 12 of 13

NXP Semiconductors 2N7002

60 V, 300 mA N-channel Trench MOSFET

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11.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFAR E Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

12. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors 2N7002

60 V, 300 mA N-channel Trench MOSFET

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 8 September 2011

Document identifier: 2N7002

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

13. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . .4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8

9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .11

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

12 Contact information. . . . . . . . . . . . . . . . . . . . . .1 2