SUPERTEX INC (}) Supertex inc. O1 pe Barzaens ooo015e O i IRF520 IRF521 a eae R520 R521 N-Channel Enhancement-Mode _. Preliminary ~ 37-0 Vertical DMOS Power FETs Ordering Information BV ngs / Rosion lion Order Number / Package BV nas (max) (min) TO-220 TO-92 100V 0.30 8.0A IRF520 R520 60V 0.32 8.0A IRF521 R621 100V 0.40 7.0A IRF522 _ 60V 0.4Q 7.0A IRF523 = Features Advanced DMOS Technology 1 Freedom from secondary breakdown These enhancement-mode (normally-off) power transistors util- OL ari . f ize a vertical DMOS structure and Supertex's well-proven silicon- ow power drive requiremen gate manufacturing process. This combination produces devices O Ease of paralleling with the power handling capabilities of bipolar transistors and with : anhi the high input impedance and negative temperature coefficient C1 Low Cigs and fast switching speeds inherent in MOS devices. Characteristic of all MOS structures, i 8 _| O Excellent thermal stability these devices are free from thermal runaway and thermally- i (1 Integral Source-Drain diode induced secondary breakdown. i vo ' . . Supertex Vertical DMOS Power FETs are ideally suited to a wide : QO) High input impedances and high gain range of switching and amplifying applications where high break- ' O Complementary N- and P-Channel devices down voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Package Options O Motor contro! O Converters ) Amplifiers O Switches O Power supply circuits > O Drivers (Relays, Hammers, Solenoids, Lamps, Gps Xy: Memories, Displays, Bipolar Transistors, etc.) 70-92 With TO-220 |] pin out {lead bend option: P11} Absolute Maximum Ratings aps aps TO-92 TO-220 Drain-to-Source Voltage BV oss Drain-to-Gate Voltage BVogs Gate-to-Source Voltage +20V Operating and Storage Temperature -55C to +150C Soldering Temperature 300C Distance of 1.6 mm from case for 10 seconds.SUPERTEX INC oi pe far73e95 coo1sas 1 . , IRF520/IRF521/IRF522/IRF! R R Thermal Characteristics APSE TIRE SERIF S2/RS20/A021 Package I, (continuous)* {, (pulsed)* | Power Dissipation, 6, 6 j Ic 18 OR loam @T,= 25C oC C IRF520, IRF521 8.0A 32.0A 40W 80 3.12 8.0A 32.0A IRF522, |RF523 7.0A 32.0A 40W 80 3.12 8.0A 32.0A R520, R521 - 1.0A 9.0A iw 170 125 1.0A 9.0A Ip (cont is limited 6} lad T. Ip (continuous) is lim y max ral } 723 >. f/ Electrical Characteristics (@ 25C unless otherwise specified) (Notes 1 and 2) Symbol Parameter Min Typ Max Unit Conditions IRF520, IRF522, | 100 Drain-to-Source R520 BVoss Breakdown Voltage | IRF521, IRF523, | __ 60 Vv Ves = 0: Ip = 25004 R521 Vas th) Gate Threshold Voltage 2.0 4.0 Vv Vos = Vos: Ip = 25004 less Gate Body Leakage 500 nA Veg = 20V, Vag = 0 logs Zero Gate Voltage Drain Current 250 Ves = 0. Vog = Max Rating 4000 pA Vag = 9, Vog = 0.8 Max Rating Ty = 125C | IRF520, IRF521,| 8.0 Vag = 10V D(ON . m Drs nou R520, R521 A Vee > loan * Posto Max atin rain Current IAFSS2. IAFSS3 | 70 os 7 'o10n) X Moscon) 9g Rosco Static Drain-to-Source | !RF520, IRF521 0.8 Q V.. = 10V,1.=4.0A ON-State Resistance R520, A521 es oO IRFS22, IRF523 0.4 G., Forward Transconductance 1.5 29 G Vos > loony * Boson, Max Rating 1, =4.0A Cc Input Capacitance 600 Iss para Veg = 0 Vpg = 25V Coss Common Source Output Capacitance 400 pF f= 1MHz Cass Reverse Transfer Capacitance 100 t Turn-ON Delay Time 40 | _dton) = t, Rise Time 70 Yoo .5BVoss ns ly = 4.04 tyorn Turn-OFF Delay Time 100 Vig = 0-8 Max Rating t, Fall Time 70 Vsp Diode Forward IRF520, IRF521 2.5 Vv Vas = OV, Ign = 1A Volt D R520, R521 onage Drop IRF522, IRF523 2.3 Vas = OV, Ign = 8A t, Reverse Recovery Time 280 ns T, = 150C, I, = 8.0A, digg = TOOAMS Note 1: All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300js pu'se, 2% duty cycle.) Note 2: All A.C. parameters sample tested. Switching Waveforms and Test Circuit 90% oS Se 1 10% \ I PULSE I (nput _7 i SCOPE tion) OFF) i GENERATOR I | D.U.T. td(ON) , tr ta(OFF), ' I Output i ___ 10% \ A. 40% t 90%: 20% L jy oF = 8-14