SYMBOLS & CODES EXPLAINED j p 7 e 4 . { i a i ( i . . [A G n LINE TYPE [DEVICE Vp. BVdss (BVgss _| \ass Igss@ ND] COMMON SOURCE/ Rds | MAX. | IN STRUC|Y200 (EO No. No. [DISS @ | | Id Ig |Vgs=0O8 we pi Vgs /Vds gfs Yos Cis FREE |MAX|-TURE | s/a jAD @25C |ld=0 |Vds | Vds>Vp!& mhos. AIR [TEMP T0200/D E w) | (vy | ty) Vv} | tA) | A A Vv MAX ee C Ser. v- Matched Type, also listed in STRUCTURE Section 13, Category 6 A typical afg D ~ Diffused @ Phototransistor, also listed in Pulsed E Epitaxial tooe bonr ae ; % High Frequency (Yes) Ge GermaniumPE 5 (i- Yes PE Planar Epitaxial PL Planar eet tg: . # Junction Type A With infinite heat sink A_y - Y, * Insulated Gate (MOS Type) T Above 28C; For additional is 9 _ Matched pair or dual information, consult manufacturer. + Not at given test conditions A Switching, other uses % Maximum Zw Chopper, Other uses + * Pulsed D Noise figure 8db or below VgglCut off} mi fT = Plastic Package A. Vogt Threshold) Vv H Hometaxial % Typical % Maximum $ Tetrode # Mini A Not given at test conditions % Insulated Gate (MNOS Type} - imimum R [_# = Mini T Rosion) # Vps * A Depletion Mode, Type A $ Depletion-Enhancement Mode, Type B x Enhancement Mode, Type C a A - BYv T- sv bso DSX A pss @ Ves = Qand Vos Vp Ves 790 Minimum Typical Pulsed ON e+ P+ , (Output Shorted) Not given at test conditions Typical Cass Cag0 g-c igs JJunction $Storage AAmbient CCase A Phototransistor Device A Tetrode Device % Composite Type BYngo ! Lo mE al ks esaleain M wa Re aay alg we TYPE No. fT - 40 # g0c * 45C $ 100c # 50 D Free Air Zz 60C y Typical Vatue 75C A- > 100C Symbols indicate temperature at which derating starts. A Q With infinite heat sink Following symbols indicate temp W Power at which derating starts: Output f- 40% (- ec % gor * 45C ~- 70C A Pulsed #- 50% $$ - 100C %_ min * 0-65C A Ambient @ 70-80 C Case # 85-100C J Junction # 110-125C S Storage 130-135C ~ 140-165C 170-200C v Over 200C D - te . $ Minimum # Pulsed or Peak a T At temperature 25C Case D- 1, # Pulsed $ Minimum aE t sraucly indicated Maximum tyt % * Ton t, # ~ ts QD ~ AtVog < Max. Veg (see mfr. spec.) FT - ttt * Tote # Icex ky A - rs * = Ton * Toft 1 cer CEO) CES @ AtTemp. 25C Case Vv Typical Value # Pulsed $ Typical tT AtTemp. > 25C # Rated max. operating frequency f # BV __ or punch-through t <b x a Gain bandwidth product (ft) Q- BV ces * Pulsed A- 1 * Maximum frequency of oscillation g BV BVsoisus) B-1 Q Figure of merit (frequency for CER $ Minimum B unity power gain) op A Minimum Z- Maximum 7 At Temp. 25C Case fon a $ Minimum ~~ "fe * ~ Available to # Pulsed selected range $ ~ Tetrode Typical narrower than # Radiation Resistant Device (Also see top of reverse side of card.)- c IN ORDER OF (1) DISSIPATION 7. SILICON FIELD EFFECT TRANSISTORS - N CHANNEL (2) TYPE No, (2 | 1]MAX.| MAX. [ABS MAX RATINGS@25C MAX. | MAX PARAMETERS @25C [DERATE DWG LC LINE TYPE [DEVICE| Vp __[BVdss |BVgss | lidss @ |igss@ [TEST COND] COMMON SOURCE [r(DS)] MAX. | IN STRUC- |200 E 0 No. No. DISS @ | & Id Ig {Vgs=O&/Vgs>VpiVgs |Vds gfs Yos | on Cis FREE [MAX {TURE | s/a {AD @25C |Id=0 |Vds Vds>Vp)&Vds=0 {mhos) AIR |TEMP T0200/D E w lw tM ow | tia lia | a) tw) Law (MIN | MAX [mhos | my | (Fy) Fwee irc) Ser. 1# TSTZTSN 360m 17.0% 15.0 BOA BGGu ton 10.0 15.0 1800uT 1.5m y4p 72.0 1200 1PL T1018 1B 2# |SI214N 360m [1.5% |5.0 8.04 1.5m 10n {0.0 5.0 goou {2.2m 23p* |2.0 200J |PL TO18 |DBS 3# |SI215N 360m (2.5% |5.0 8.0A 3.0m 10n_ |0.0 5.0 1.3m_|3.0m 23p* |2.0 200J |PL TO18 [DBD 4# |SI216N 360m [3.5% |5.0 8.04 6.0m 10n |0.0 5.0 18m [4.2m 23p* [2.0 200J {PL TO18 [DBA 5 TIXS78 360m 10t | 30 300A 10m| 10m% |2.0n 0.0 30 1.75m |3.0m 100u%/1.5k% |3.0pA 35m | 150J {Pt X55 DB 6 TIXS79 360m 12t {| 30 200A 1Om| t10m% [2.00 0.0 30 = 1.75m (3.0m 100u%12.0k% |3.0pA 35m |/150J |Pt X55 DB 7# |BFX78 375m Al 115A) 254 26m 412 [6.0 9OA 2.7p# [2.5m [175J jDPE*S|TO72 [DS 8 FT57 375m A\ 15A/ 254 26m 0.0 12 |6.0m%|9.0mA 2.7p#* |2.5m |175J DPE*Z|TO72 {DS 9 C673 400m 10 15 40A| 40A 50m|6.0m 10nA |90.0 15 |1.0m_ [2.5m 20u .Opt 2.3m {|200J |E TOS 00 10 C674 400m 10 15 40A| 40A 50m/6.0m 10nA |0.0 15 {1.0m [2.5m 20u 5.0pt 2.3m [200J |E TO18 [DD 11 CMX740t 400m 10 |5.0 30 (1.0 100m|500mA% 10n 2.5 % 2.3m )200J |E TO46 [DDS 12 01101 00m 10 10 254 4.0mA 10n_ |0.0 20 |400u_ |2.0m 2.8kA |2.0p% 2.3m |200J JE TO18 [DBD 13 01102 400m [5.0 10 25A 1.0mA 10n {0.0 20 (300u {1.0m 3.6kA |[2.0pG 2.3m [2005 |E TO18 |DBZ 14 01103 400m }2.5 10 25A 250uA 10n /0.0 20 |200u |1.0m 5.5kA |2.0pS 2.3m )200J |E TO18 |DBZ 15 01177 400m 10 20 SOA 4.0mA_ (5.0n 0.0 20 ([400u [2.0m 2.8kA [2.0p 2.3m (200J (E TO18 [DBS 16 B1178 400m [5.0 20 50A 1.0mA /[5.0n 0.0 20 [300u |1.0m 3.6kA |2.0pS 2.3m |200J jE TO18 [OBS 17 D1179 400m |2.5 20 5OA 250uA |5.0n 0.0 20 |200u |1.0m 5.5kA |2.0pS 2.3m |200J |E TO18 |DBS 18 01180 400m 10 20 50A 10mA_(5.0n 0.0 20 |1.0m_|4.0m L1kA |[3.5p% 2.3m |200J |E TO18 [DBZ 19 D1181 400m [5.0 20 50A 2.5mA |5.0n 0.0 20 = 1750u |2.5m 1.5kA [3.5pd 2.3m /200J |E TO18 [DBS 20 D1182 400m [2.5 20 50A 600uA |5.0n 0.0 20 |500u {2.5m 2.5kA |3.5pD 2.3m |200J JE TO18 [DBS 21 01183 400m (8.0 20 50A 15m 5.0n 0.0 20 |2.5m 10m 6.0p@ 200S5 |E TO18 |DB 22 01184 400m [4.0 20 50A 4.0m 5.0n 0.0 20 [1.5m j6.0m 6.0pS 200J |E TO18 |DBd 23 01185 400m |2.0 20 5OA 1.0m 5.0n 0.0 20 |.80m |4.5m 6.0pD 200J |E TO18 |DBD 24 01201 400m 10 10 25A 1OmA 10n_ |0.0 20 11.0m_ (4.0m 1L.1kA ([5.0p@ [2.3m |200J |E TO18 (DBZ 25 B1I202 400m 15.0 10 25A 2.5mA On 0.0 20 j600u |2.5m T8kA |5.0pe 2.3m [200J |E TO18 [DBS 26 01203 400m [2.5 10 25A 600uA 10n (0.0 20 |300u |2.5m 3.6kA |5.0pd 2.3m )200J |E TO18 [DBZ 27 Db1301 400m _|8.0 10 25A 15m 10n_|0.0 20 |2.5m 10m 6.0pS 200J |E T918 |DB 28 01302 400m |4.0 10 25A 4.0m 10n {0.0 20 (1.5m |6.0m 6.0pS 200J |E TO18 [DBZ 29 D1303 400m |2.0 10 25A 1.0m 10n |0.0 20 |.80m |4.5m 6.0pD 200J |E TO18 |DBS 30 01420 400m |4.0 10 25A 5.0mA_ |1.0n 0.0 20 = |1.0m 5.0pd 2.3m_}200J |N-E TO18 |DBS 31 01421 400m |6.0 10 254 yOmA |1.0n 0.0 20 |2.0m 6.0pe 2.3m |200J |N-E TO18 (DBZ 32 01422 400m 10 10 25h 15mA |5.0n 0.0 20 |1.0m 5.0pS 2.3m |200J |N-E TO18 |DBY 33 ON3O66A 400m 10 30 50A 4.0mA_ {1.0n 0.0 30 |.40m 1.0m 10p# |2.3m |200J |N-E TOI |OB 34 ON3067A 400m [5.0 30 50A 1.0mA /1.0n 0.0 30 = [.30m 1.0m 1Op# [2.3m /200J |N-E TOTS (OBZ 35 DON3O68A 400m [2.5 30 50A .25mA [1.0n 0.0 30 |.20m 1.0m 10p# [2.3m |200J |N-E TO18 |DBD 36 DN3069A 400m 10 30 50A 10mA |1.0n 0.0 30 [1.0m |2.5m 5p# [2.3m |200J |N-E TO18 [DBD 37 DN3070A 400m [5.0 30 5OA 2.5mA }1.0n 0.0 30 |.75m |2.5m T5p# [2.3m |200J [N-E TO18 |OBZ 38 BN3071A 400m |2.5 30 5O0A 6O0mA |1.0n 0.0 3