ADVANCED POWFR TECHNOLOGY 4SE D Ml 0257909 0000476 bab MBAVP ADVANCED POWER +29-\5 TECHNOLOGY APT6060AN 600V 11.5A 0.60 Q APT5560AN 550V 11.5A 0.60 Q APT6070AN 600V 10.5A 0.70 Q M POWER MOS IV' APT5570AN 550V 10.5A 0.70 Q N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T, = 25C unless otherwise specified. APT Symbol | Parameter SS60AN | 6060AN | 5570AN | 6070AN | UNIT Vpgs_ | Drain-Source Voltage 550 600 550 600 Volts Ip | Continuous Drain Current 11.5 10.5 Amps Ibm | Pulsed Drain Current! 46 42 Amps Ves | Gate-Source Voltage +30 Volts Py Total Power Dissipation @ Ty = 25C, 198 Watts Derate Above 25C TT stg | Operating and Storage Junction Temperature Range - 55 to 150 C STATIC ELECTRICAL CHARACTERISTICS Symbol| Characteristic / Test Conditions / Part Number MIN TYP | MAX | UNIT BV Drain-Source Breakdown Voltage APT6060AN / APT6070AN 600 Volts DSS | (Vas = OV, Ip = 250 HA) APTSS5GOAN / APT5570AN 550 Volts i Zero Gate Voltage Drain Current (Vos Vogs: Veg = OV) 250 A pss 7 it (Vog = 0.8 Vigg, Vag = OV, T, = 125C) 1000 less Gate-Source Leakage Current (Ves = +30V, Vos = OV) +100 nA 1 (ON) On State Drain Current 2 APT6060AN / APTSS60AN 11.5 Amps 0 (Vg > |p(ON) x Rpg(ON) Max, Vag = 10V) | APT6070AN/ APTS5S70AN 10.5 Amps Veg(TH) Gate Threshold Voltage (Vos = Ves: Ip = 1mA) 2 4 Volts R_(ON Static Drain-Source On-State Resistance ? | APT6060AN / APT5S60AN 0.60 | Ohms ps(ON) (Veg = 10V, |, = 0.5 1, [Cont.]) APT6070AN / APT5570AN 0.70 | Ohms THERMAL CHARACTERISTICS Symbol] Characteristic MIN | TYP | MAX | UNIT Raye | Junction to Case 0.63 | C/W Roja | Junction to Ambient 30 | C/W T, | Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec. 300 C 405 S.W. COLUMBIA STREET PHONE ... (503) 382-8028 BEND, OREGON 97702-1035 U.S.A. FAX ..... (503) 388-0364 64ADVANCED POWFR TECHNOLOGY 4SE D @@ 0257909 OO00477 S?e MBAVP 7-39-15" DYNAMIC CHARACTERISTICS APT6060/5560/6070/5570AN Symbol | Characteristic Test Conditions MIN TYP | MAX | UNIT C.., | Input Capacitance Veg = OV 1510 | 1800 pF oss | Output Capacitance Vpg = 25V 280 | 390 pF C., | Reverse Transfer Capacitance f=1 MHz 105 | 157 pF Q, | Total Gate Charge 66 105 nc Vg = 10V, I, = I [Cont. Qos Gate-Source Charge Gs o='ol 8 12 nc Vpp = 9-5 Vogg Q6a Gate-Drain ("Miller") Charge 35 53 nc t,(on) | Turn-on Delay Time 13 25 ns Vi, =0.5V t Rise Time DD DSS 18 35 ns c I, = |, [Cont.], Vag = 15V t,(off) | Turn-off Delay Time R, = 1.82 51 77 ns t Fall Time 21 41 ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol | Characteristic / Test Conditions / Part Number MIN TYP | MAX | UNIT . . APT6060AN / APTS560AN 411.5 | Amps Is Continuous Source Current (Body Diode) APT6070AN / APT5570AN 10.5 | Amps APT6060AN / APT5560AN A lou Pulsed Source Current (Body Diode) 46 mes APT6070AN / APT5570AN 42 | Amps Vgp _ | Diode Forward Voltage (Vo, = OV, I, = -1, [Cont.]) 1.3. | Volts tt Reverse Recovery Time (1, =-l, [Cont], dl,/dt = 100A/ps) 148 297 594 ns rr | Reverse Recovery Charge 2 4 8 pC SAFE OPERATING AREA CHARACTERISTICS Symbol | Characteristic Test Conditions / Part Number MIN TYP MAX | UNIT SOA1 | Safe Operating Area Vog = 0-4 Voss: Ing = Pp / 0-4 Vogg t= 1 Sec. | 198 Watts SOA2 | Safe Operating Area log = Ip [Cont], Vpg = Pp / I, [Cont], t=1 Sec.) 198 Watts APT6060AN / APT5560AN A VM Inductive Current Clamped 46 mes APT6070AN / APT5570AN 42 Amps 1.) Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig. 1) 1.0 0.5 0.1 0.05 0.01 0.005 Z@Jc. THERMAL IMPEDANCE (C/W) 0.001 10 107 10 2.) Pulse Test: Pulse width < 380 pS Duty Cycle < 2% 3.) See MIL-STD-750 Method 3471 = tt) > }t2>| DUTY FACTOR D =ty/tg PEAK Ty=PpmxZ@Jc + Tc 10? 107! 1.0 RECTANGULAR PULSE DURATION (SECONDS} FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 65 10POWFR TECHNOLOGY ADVANCFD 16 a us 5G 12 Qa = =< WW 8 a = o z a 4 5 45V oO 4Vv 05 50 700 1 200 Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 16 T J -55C = +25C a Ww a Vps> lp (ON) = 6 & 12 FH Sao0 sec putes TEST Ty= +125C <= - a x 8 ra ~ oO z e 4 a T J = +125C a Ty= <T) = 55C 5 2 4 6 8 Vas. GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 12 ws 10 wi APT6060/5560AN 2 8 5 APT6070/5570AN id 5 oO z 4 a a a 2 100 1 150 75 Tc, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 3.0 Ip 0.5 Ip [Cont] = Vag = 10V < 6s 5 28 wa id z= 20 48 4 S 2 1.5 Pa 33 eS 1.0 z Ll = Os Qa z Z, 0.0.59 p59 988075 100125 750 Ty, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE Y5SE D @ 0257909 Ros(ON), DRAIN-TO-SOURCE ON RESISTANCE Ip, DRAIN CURRENT (AMPERES) VOLTAGE (NORMALIZED) (NORMALIZED) BVoss, DRAIN-TO-SOURCE BREAKDOWN Va@s(TH), THRESHOLD VOLTAGE (VOLTS) (NORMALIZED) 66 0000478 4O9 GBAVP TH B95 10 Vv 10V 8 6V 6 4 2 av 0 Q 2 4 6 8 Vps. DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 3.0 1,92 2y SEC PULSE TEST NORMAUZED TO 2.5 Hvig =10V @ 05 |, [Cont] Ve =! ov 2.0 1.5 1.0 0.8 0 5 10 15 20 Ip, DRAIN CURRENT (AMPERES) FIGURE 5, Rog(ON) vs DRAIN CURRENT 1.2 1.1 1.0 0.9 0.8 0.7 - 1 Ty, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.4 1.2 1.0 0.8 0.6 0465-25 0 25 50 75 100 125 150 Tc, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATUREADVANCFD POWFR TECHNOLOGY 49E D 100 ~ 10pS ~ jaa ri UMITED BY Figg (OM) 100uS a = 10 = 1mS & w ce s 3 ' 10mS = Cc f =+150C 100mS o PULSE DC 4 APT5560/5570AN APT6060/6070AN A Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 20 s! 20V 1 =300V 16 Oo Vos 12 Vag, GATE-TO-SOURCE VOLTAGE (VOLTS) 0% 20 40 60 80 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 100 TO-3 Package Outline (TO-204AA) 0257909 0000479 34S WBAVP 10,000 1,000 100 C, CAPACITANCE (pF) WG APT6060/5560/6070/5570AN 7-39-15 10 20 30 40 50 Vps. DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 100 50 20 10 1.0 Ibn. REVERSE DRAIN CURRENT (AMPERES) 0 Ty = +150C 5 Vsp > SOURCE-TO-DRAIN VOLTAGE (VOLTS) T, = +25C J 1.0 1 2.0 FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE 3.84 (.151) 4.09 (.161) ; ' Seati {2-Places) Dp eating - Plane Gate ertze. oN TOT 8T A. 16.64 (655 38.61 (1.52 Source a *sS\17.15 (678 3012 (1.54 4 22.23 (.875) Max. Y (Case) 1b coy tt w wey 20.00 (1.177) wy 4 30.40 (1.197 0.97 (.038) wJs. LL -T% 119,043) Trbs2 | -Piaces a wap U _>l 1,52 (.060) 5.21 (.205) < 3.43 (.135) se 5.72 (225) 6.35 (.250) |. ole 7.92 (312) <> 10.67 (.420} 9.15(.360) ~~ 2.70 (500) <* 11.18 (.440) 25.15 0.990) 26.67 (1.050 Dimensions in Millimeters and (inches) 050-6003 Rev- 67