TCK22xxxG/TCK2065G/TCK1024G
2019-04-12
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© 2018 - 2019
Toshiba Electronic Devices & Storage Corporation
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TCK22xxxG, TCK2065G, TCK1024G
Load Switch IC with Over current limited function
The TCK22xxxG, TCK2065G and TCK1024G are Load Switch ICs for
power management with Over Current Limited function featuring low
switch on resistance, ultra low quiescent current, high output current and
wide input voltage operation. Typical switch ON resistance is only 31 mΩ
at VIN = 5.0 V, IOUT = -0.15 A load conditions. And these feature a thermal
shut down function and output auto-discharge function.
These devices are available in 0.4 mm pitch ultra small package
WCSP6E (0.8 mm x 1.2 mm, t: 0.55 mm). So these devices are ideal for
portable applications that require high-density board assembly such as
cellular phone.
Feature
Over current limit function
ICL = 400/740/1110/1540 mA (Option)
Thermal shutdown function
Inrush current reduction
Output auto-discharge function
True reverse current blocking function(Option)
Under voltage lockout function(Option)
Low ON resistance :
RON = 31 m (typ.) at VIN = 5.0 V, IOUT = -0.15 A
RON = 40 m (typ.) at VIN = 3.3 V, IOUT = -0.15 A
RON = 70 m (typ.) at VIN = 1.8 V, IOUT = -0.15 A
Low quiescent current: IQ = 25 μA (typ.) at VIN = 5.5 V, IOUT = 0 mA
Pull down connection between CONTROL and GND
Ultra small package : WCSP6E (0.8 mm x 1.2 mm, t: 0.55 mm)
WCSP6E
Weight: 1 mg (typ.)
Start of commercial production
2016-02
TCK22xxxG/TCK2065G/TCK1024G
2019-04-12
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© 2018 - 2019
Toshiba Electronic Devices & Storage Corporation
Function Table
Part number
Function
Output current
limit
True Reverse
current blocking
Output auto-
discharge
Under voltage
lock out
Thermal shut
down
Control pin
polarity
TCK22946G
400 mA
Built in
Built in
Built in
Built in
Active High
TCK22951G
740 mA
Built in
Built in
Built in
Built in
Active High
TCK2065G
1110 mA
Built in
Built in
Built in
Built in
Active High
TCK1024G
1540 mA
Built in
Built in
Built in
Built in
Active High
TCK22891G
400 mA
N/A
Built in
N/A
Built in
Active High
TCK22892G
740 mA
N/A
Built in
N/A
Built in
Active High
TCK22893G
1110 mA
N/A
Built in
N/A
Built in
Active High
TCK22894G
1540 mA
N/A
Built in
N/A
Built in
Active High
TCK22xxxG/TCK2065G/TCK1024G
2019-04-12
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© 2018 - 2019
Toshiba Electronic Devices & Storage Corporation
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Input voltage
VIN
-0.3 to 6.0
V
Control voltage
VCT
-0.3 to 6.0
V
Output voltage
VOUT
-0.3 to 6.0
V
Output current
IOUT
Internally limited
-
Power dissipation
PD
800 (Note 1)
mW
Operating temperature range
Topr
40 to 85
°C
Junction temeperature
Tj
150
°C
Storage temperature
Tstg
55 to 150
°C
Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
Note1: Rating at mounting on a board
Board material: Glass epoxy (FR4)
Board dimension: 40mm x 40mm (both sides of board), t=1.6mm
Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50%
Through hole: diameter 0.5mm x 28
Operating conditions
Characteristics
Symbol
Condition
Min
Max
Unit
Input voltage
VIN
TCK22946G
TCK22891G
1.1
5.5
V
Others
1.4
5.5
Output voltage
VOUT
VIN
V
CONTROL High-level input voltage
VIH
1.2V < VIN 5.5 V
1.0
V
1.1V VIN 1.2 V
0.9
CONTROL Low-level input voltage
VIL
0.4
V
Pin Assignment(Top view) Top marking
Index
A1: V
OUT
B1: VOUT
C1: GND
A2: VIN
B2: VIN
C2: CONTROL
1
2
A
B
C
Lot trace code
Device Marking
TCK22xxxG/TCK2065G/TCK1024G
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Toshiba Electronic Devices & Storage Corporation
Block Diagram
TCK22946G, TCK22951G, TCK2065G, TCK1024G
TCK22891G, TCK22892G, TCK22893G, TCK22894G
Operation logic table
TCK22946G, TCK22951G
TCK2065G, TCK1024G
TCK22891G, TCK22892G
TCK22893G, TCK22894G
Control
“High”
Output Q1
ON
ON
Discharge Q2
OFF
OFF
Reverse current blocking
Active
Control
Low
Output Q1
OFF
OFF
Discharge Q2
ON
ON
Reverse current blocking
Active
Control
Logic
Pull
Down
V
IN
V
OUT
GND
Slew Rate
Control Driver
Output
Discharge
CONTROL
True Reverse current
blocking
UVLO
Thermal
Shut down
Over current
Protection
Q1
Q2
Current
Sense
Control
Logic
Pull
Down
V
IN
V
OUT
GND
Slew Rate
Control Driver
Output
Discharge
CONTROL
Thermal
Shut down
Over current
Protection
Q1
Q2
Current
Sense
TCK22xxxG/TCK2065G/TCK1024G
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Toshiba Electronic Devices & Storage Corporation
Electrical Characteristics
DC Characteristics (Ta = -40 to 85°C)
Characteristics
Symbol
Test Condition
Ta = 25°C
Ta = 40 to 85°C
Unit
Min
Typ.
Max
Min
Max
Quiescent current ( ON state)
IQ
IOUT = 0 mA
VIN = 1.1 V
16
μA
VIN = 5.5 V
25
50
μA
Quiescent current ( OFF state)
IQ(OFF)
VIN = 5.5 V, VOUT = OPEN,
0.6
2.5
μA
Reverse blocking current
IRB
VOUT = 5.0 V,
VIN = 0 V, RCB active (Note 2)
0.01
2
μA
Reverse blocking voltage threshold
VRB
VOUT VIN (Note 2)
35
mV
Reverse blocking release voltage
threshold
VRBR
VOUT VIN (Note 2)
-15
mV
Under Voltage Lock Out (UVLO)
rising threshold
VUVL_RI
(Note 2)
0.82
1.1
V
Under Voltage Lock Out (UVLO)
falling threshold
VUVL_FA
(Note 2)
0.77
V
On resistance
RON
IOUT = -0.15 A
VIN = 5.0 V
31
85
mΩ
VIN = 3.3 V
40
95
VIN = 1.8 V
70
140
VIN = 1.2 V (Note 3)
141
VIN = 1.1 V (Note 3)
179
Output Limited Current
ICL
VIN = 5.5 V
TCK22946G
TCK22891G
400
mA
TCK22951G
TCK22892G
740
TCK2065G
TCK22893G
1110
TCK1024G
TCK22894G
1540
Output discharge on resistance
RSD
100
Ω
Note 2: Only applies to the TCK22946G, TCK22951G, TCK2065G and TCK1024G
Note 3: Only applies to the TCK22946G and TCK22891G
TCK22xxxG/TCK2065G/TCK1024G
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Toshiba Electronic Devices & Storage Corporation
AC Characteristics (Ta = 25°C)
VIN = 5.0 V
Characteristics
Symbol
Test Condition(Figure 1)
Min
Typ.
Max
Unit
VOUT rise time
tr
VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF,
50
μs
VOUT fall time
tf
VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF,
50
μs
Turn on delay
tON
VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF,
40
μs
Turn off delay
tOFF
VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF,
10
μs
AC Waveform
Figure 1 tr, tf, tON, tOFF Waveforms
VIH
VOUT
VCT
VOL
VOH
VIL
90%
tON
tOFF
50%
50%
10%
tr
tf
VOUT
10%
90%
90%
10%
TCK22xxxG/TCK2065G/TCK1024G
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© 2018 - 2019
Toshiba Electronic Devices & Storage Corporation
Application Note
1. Application circuit example (top view)
The figure below shows the recommended configuration.
1) Input and Output capacitor
An input capacitor (CIN) and an output capacitor (COUT) are necessary for the stable operation. And they are effective to
reduce voltage overshoot or undershoot due to sharp changes in output current and also for improved stability of the
power supply. When used, place CIN and COUT more than 1.0μF as close to VIN pin to improve stability of the power supply.
2) Control pin
The CONTROL pin controls state of the switch, operated by the control voltage and Schmitt trigger. Also, pull down
resistance equivalent to a few MΩ is connected between CONTROL and GND, thus the load switch IC is in OFF state
even when CONTROL pin is OPEN.
2. Over current limit function
This device has a built-in fold-back type of Current-limiting Circuit. Around 15% or more derating against typical values
is recommended for system design with enough margin.
3. Thermal shutdown function
Each device has a built-in Thermal shutdown circuit. If the junction temperature goes beyond 170°C (Typ.), thermal
shutdown circuit operates and turns off power switch. When the junction temperature decreases lower than 150°C, the
power switch is turned on due to hysteresis. This operation is repeated as long as the junction temperature continues
increasing.
4. True reverse current blocking function(Option)
Some of these devices have built-in True reverse current blocking circuit (TRCB) to block reverse current from VOUT to
VIN regardless of output MOSFET ON/OFF condition. (Full-Time Reverse Current Protection)
5. Under-voltage Lockout function(Option)
Some of these devices have a built-in Under-voltage Lockout Circuit to turn off switch if VIN drops below UVLO. This
circuit has hysteresis and UVLO is released when VIN exceeds threshold.
6. Instructions and directions for use
Each device has several built-in protection functions, but these does not assure for the suppression of uprising device
operation. In use of these products, please read through and understand dissipation idea for absolute maximum ratings from
the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum ratings
in any condition. Furthermore, Toshiba recommend inserting failsafe system into the design.
Control
Voltage Output
Voltage
HIGH
ON
LOW
OFF
OPEN
OFF
VOUT
GND
VIN
CONTROL
CL
RL
LOAD
CIN
COUT
TCK22xxxG/TCK2065G/TCK1024G
2019-04-12
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© 2018 - 2019
Toshiba Electronic Devices & Storage Corporation
7. Power Dissipation
Power dissipation is measured on the board condition shown below.
[The Board Condition]
Board material: Glass epoxy (FR4)
Board dimension: 40mm x 40mm (both sides of board), t=1.6mm
Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50%
Through hole: diameter 0.5mm x 28
Please allow sufficient margin when designing a board pattern to fit the expected power dissipation. Also take into consideration
the ambient temperature, input voltage, output current etc. and applying the appropriate derating for allowable power
dissipation during operation.
0
200
400
600
800
1000
-40 040 80 120
Power Dissipation PD(mW)
Ambient Temperature Ta (℃)
PD-Ta
TCK22xxxG/TCK2065G/TCK1024G
2019-04-12
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© 2018 - 2019
Toshiba Electronic Devices & Storage Corporation
Package dimension
Weight: 1 mg (typ.)
Unit: mm
TCK22xxxG/TCK2065G/TCK1024G
2019-04-12
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© 2018 - 2019
Toshiba Electronic Devices & Storage Corporation
Land pattern dimensions (for reference only)
Unit mm
TCK22xxxG/TCK2065G/TCK1024G
2019-04-12
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© 2018 - 2019
Toshiba Electronic Devices & Storage Corporation
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