DMN601DMK
Document number: DS30657 Rev. 5 - 2 1 of 5
www.diodes.com November 2011
© Diodes Incorporated
DMN601DM
K
NEW PRODUCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS R
DS(ON) max ID max
TA = 25°C
60V 2.4 @ VGS = 10V 510mA
4.0 @ VGS = 4V 390mA
Features and Benefits
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected Up To 2kV
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the
on-state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Power management functions
• Analog Switch
Mechanical Data
• Case: SOT26
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.015 grams (approximate)
Ordering Information (Note 3)
Part Number Case Packaging
DMN601DMK-7 SOT26 3000/Tape & Reel
Notes: 1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code S T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT26
Top View Top View
Internal Schematic
Equivalent Circuit
Per Element
S
1
D
1
D
2
S
2
G
1
G
2
Source
Body
Diode
Gate
Protec ti on
Diode
Gate
Drai
n
K7K = Marking Code
YM = Date Code Marking
Y = Year (ex: S = 2005)
M = Month (ex: 9 = September)
ESD PROTECTED TO 2kV
K7K YM
K7K YM
DMN601DMK
Document number: DS30657 Rev. 5 - 2 2 of 5
www.diodes.com November 2011
© Diodes Incorporated
DMN601DM
K
NEW PRODUCT
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current (Note 5) VGS = 10V
Steady
State TA = 25°C
TA = 70°C ID 510
400 mA
t<10s TA = 25°C
TA = 70°C ID 580
470 mA
Continuous Drain Current (Note 5) VGS = 4V
Steady
State TA = 25°C
TA = 70°C ID 390
300 mA
t<10s TA = 25°C
TA = 70°C ID 440
340 mA
Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 850 mA
Maximum Body Diode Continuous Current IS 1.2 A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 4) PD 0.7 W
Thermal Resistance, Junction to Ambient (Note 4) Steady state RθJA 157 °C/W
t<10s 121
Total Power Dissipation (Note 5) PD 0.98 W
Thermal Resistance, Junction to Ambient (Note 5) Steady state RθJA 113 °C/W
t<10s 88
Thermal Resistance, Junction to Case (Note 5) R
θ
JC 26
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS 60 ⎯ ⎯ V VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS = 60V, VGS = 0V
Gate-Source Leakage IGSS ⎯ ⎯ ±10 μA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS
(
th
)
1.0 1.6 2.5 V
VDS = 10V, ID = 1mA
Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯
⎯ 2.4
4.0 Ω VGS = 10V, ID = 200mA
VGS = 4V, ID = 200mA
Forward Transfer Admittance |Yfs| 100 ⎯ ⎯ ms VDS =10V, ID = 200mA
Diode Forward Voltage VSD 0.5 ⎯ 1.4 V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance Ciss ⎯ 30 50 pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ⎯ 5 25 pF
Reverse Transfer Capacitance Crss ⎯ 3 5.0 pF
Gate Resistance R
g
⎯ 133 ⎯ VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge Q
g
⎯ 304 ⎯ nC VGS = 4.5V, VDS = 10V,
ID = 250mA
Gate-Source Charge Q
g
s ⎯ 84 ⎯
Gate-Drain Charge Q
g
d ⎯ 203 ⎯
Turn-On Delay Time tD
(
on
)
⎯ 3.9 ⎯
ns VDS = 30V, ID = 0.2A,
VGS = 10V, RG = 25, RL = 150
Turn-On Rise Time t
⎯ 3.4 ⎯
Turn-Off Delay Time tD
(
off
)
⎯ 15.7 ⎯
Turn-Off Fall Time tf ⎯ 9.9 ⎯
Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
6. Short duration pulse test used to minimize self-heating effect
7. Guaranteed by design. Not subject to production testing
DMN601DMK
Document number: DS30657 Rev. 5 - 2 3 of 5
www.diodes.com November 2011
© Diodes Incorporated
DMN601DM
K
NEW PRODUCT
0
0.2
0.4
0.6
0.8
1.0
012345
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
V , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
T , CHANNEL TEMPERATURE (°C)
Fig . 3 Gate Threshold Voltag e
vs . Ch annel Temp er atu r e
ch
0
0.5
1
1.5
2
-50 -25 025 50 75 100 125 150
V = 10V
I= 1mA
Pulsed
DS
D
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
0.1
I DRAIN CURRENT( A )
Fig . 4 Static D r ai n- Sou r ce O n- R esistance
vs. D rain C urr ent
D,
1
10
R , STA T IC DRAIN-SOURCE
ON-RESI STANCE ( )
DS(ON)
Ω
1
I , DRAIN CURRENT (A)
Fig. 5 St atic Drain-Source On-Resistance
vs. D r ai n C urre nt
D
10
R , STATIC DRAIN- SOURCE
ON-RESIST ANCE ( )
DS(ON)
Ω
0
V GATE-SOURCE VOLTAGE (V)
Fig. 6 St atic Drain-Source On-Resistance
vs. Gate-So u rce Vo ltag e
GS,
R , ST ATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
Ω
DMN601DMK
Document number: DS30657 Rev. 5 - 2 4 of 5
www.diodes.com November 2011
© Diodes Incorporated
DMN601DM
K
NEW PRODUCT
0
T , CHANNEL TEMPERATURE ( C)
Fig. 7
CH
°
S tatic Drain-Source On-State Resistance
vs . Channel Temp er atu r e
R , ST ATIC DRAIN-SOURCE
ON-ST ATE RESISTANCE ( )
DS(ON)
Ω
I , REVERSE DRAIN CURRENT (A)
DR
1
I , REVERSE DRAIN CURRENT (A)
DR
1
I , DRAIN CURRENT (A)
D
Fig.10 Forward Transfer Admittance vs. Drain Current
|
Y
|, F
O
R
WA
R
D
T
R
A
N
SFE
R
ADMI
T
T
A
N
C
E (S)
fs
Package Outline Dimensions
SOT26
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D ⎯ ⎯ 0.95
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
α 0° 8°
⎯
All Dimensions in mm
A
M
JL
D
B C
H
K
DMN601DMK
Document number: DS30657 Rev. 5 - 2 5 of 5
www.diodes.com November 2011
© Diodes Incorporated
DMN601DM
K
NEW PRODUCT
Suggested Pad Layout
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Cus tomer or user of this document or prod ucts described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated p roducts for any unintended or una uthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign p atents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the e xpress
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
www.diodes.com
Dimensions Value (in mm)
Z 3.20
G 1.60
X 0.55
Y 0.80
C1 2.40
C2 0.95
X
Z
Y
C1
C2
C2
G