XTEAWT-00-4A0-R40 - CREE - Datasheet.Live

2011-05-31

Rev.1.4 Page 1

BSO613SPV G

SIPMOS Power-Transistor

Features

·

P-Channel

·

Enhancement mode

·

Avalanche rated

·

d

v

/d

t

rated

Product Summary

Drain source voltage

V

DS -60 V

Drain-source on-state resistance 0.13

W

R

DS(on)

Continuous drain current A

I

D-3.44

SIS00062

G45

D

S36

D

S27

D

S18

Top View

D

Type Package Lead free

BSO613SPV G PG-SO 8 Yes

Maximum Ratings,at

T

j

= 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Continuous drain current

T

A

= 25 °C

I

D

-3.44 A

Pulsed drain current

T

A

= 25 °C

I

D puls

-13.8

Avalanche energy, single pulse

I

D

= -3.44 A ,

V

DD

= -25 V,

R

GS

= 25

W

E

AS

150 mJ

0.25

E

AR

Avalanche energy, periodic limited by

T

jmax

Reverse diode d

v

/d

t

I

S

= -3.44 A,

V

DS

= -48 V, d

i

/d

t

= 200 A/µs,

T

jmax

= 150 °C

d

v

/d

t

6kV/µs

Gate source voltage

V

GS

±20 V

Power dissipation

T

A

= 25 °C

P

tot

2.5 W

Operating and storage temperature

T

j ,

T

stg

-55... +150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

° Qualified according to AEC Q101

2011-05-31

Rev.1.4 Page 2

BSO613SPV G

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - soldering point

(Pin 4)

R

thJS - - 25 K/W

SMD version, device on PCB:

@ min. footprint; t

£

10 sec.

@ 6 cm2 cooling area 1); t

£

10 sec.

R

thJA

-

100

50

Electrical Characteristics, at

T

j = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

GS = 0 V,

I

D = -250 µA

V

(BR)DSS -60 - - V

Gate threshold voltage,

V

GS =

V

DS

I

D = 1 mA

V

GS(th) -2.1 -3 -4

Zero gate voltage drain current

V

DS = -60 V,

V

GS = 0 V,

T

j = 25 °C

V

DS = -60 V,

V

GS = 0 V,

T

j = 125 °C

I

DSS

-

-0.1

-10

-1

-100

µA

Gate-source leakage current

V

GS = -20 V,

V

DS = 0 V

I

GSS - -10 -100 nA

Drain-source on-state resistance

V

GS = -10 V,

I

D = -3.44 A

R

DS(on) - 0.11 0.13

W

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

2011-05-31

Rev.1.4 Page 3

BSO613SPV G

Electrical Characteristics, at

T

j = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

V

DS

³

2*

I

D*

R

DS(on)max ,

I

D = -3.44 A

g

fs 2.2 4.4 - S

Input capacitance

V

GS = 0 V,

V

DS = -25 V,

f

= 1 MHz

C

iss - 700 875 pF

Output capacitance

V

GS = 0 V,

V

DS = -25 V,

f

= 1 MHz

C

oss - 235 295

Reverse transfer capacitance

V

GS = 0 V,

V

DS = -25 V,

f

= 1 MHz

C

rss - 95 120

Turn-on delay time

V

DD = -30 V,

V

GS = -10 V,

I

D = -3.44 A,

R

G = 2.7

W

t

d(on) - 10 15 ns

Rise time

V

DD = -30 V,

V

GS = -10 V,

I

D = -3.44 A,

R

G = 2.7

W

t

r- 11 16.5

Turn-off delay time

V

DD = -30 V,

V

GS = -10 V,

I

D = -3.44 A,

R

G = 2.7

W

t

d(off) - 32 48

Fall time

V

DD = -30 V,

V

GS = -10 V,

I

D = -3.44 A,

R

G = 2.7

W

t

f- 12 18

2011-05-31

Rev.1.4 Page 4

BSO613SPV G

Electrical Characteristics, at

T

j = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Gate to source charge

V

DD = -48 V,

I

D = -3.44 A

Q

gs - 1.6 2.4 nC

Gate to drain charge

V

DD = -48 V,

I

D = -3.44 A

Q

gd - 10 15

Gate charge total

V

DD = -48 V,

I

D = -3.44 A,

V

GS = 0 to -10 V

Q

g

- 20 30

Gate plateau voltage

V

DD = -48 V ,

I

D = -3.44 A

V

(plateau) - -3.74 - V

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current

T

A = 25 °C

I

S- - -3.44 A

Inverse diode direct current,pulsed

T

A = 25 °C

I

SM - - -13.8

Inverse diode forward voltage

V

GS = 0 V,

I

F = -3.44 A

V

SD - -0.87 -1.16 V

Reverse recovery time

V

R = -30 V,

I

F=

I

S , d

i

F/d

t

= 100 A/µs

t

rr - 56 84 ns

Reverse recovery charge

V

R = -30 V,

I

F=

l

S , d

i

F/d

t

= 100 A/µs

Q

rr - 38 57 nC

2011-05-31

Rev.1.4 Page 5

BSO613SPV G

Power Dissipation

P

tot =

f

(

T

A)

0 20 40 60 80 100 120 °C 160

T

A

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

W

2.8 BSO613SPV

P

tot

Drain current

I

D =

f

(

T

A)

parameter:

V

GS

³

10 V

0 20 40 60 80 100 120 °C 160

T

A

0.0

-0.4

-0.8

-1.2

-1.6

-2.0

-2.4

-2.8

-3.2

A

-3.8 BSO613SPV

I

D

Safe operating area

I

D =

f

(

V

DS )

parameter :

D

= 0 ,

T

A = 25 °C

-10 -1 -10 0 -10 1 -10 2

V

DS

-2

-10

-1

-10

0

-10

1

-10

2

-10

A

BSO613SPV

I

D

R

DS(on)

=

V

DS

/

I

D

DC

10 ms

1 ms

t

p = 550.0µs

Transient thermal impedance

Z

thJC =

f

(

t

p)

parameter :

D

=

t

p/

T

10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3

s

t

p

-3

10

-2

10

-1

10

0

10

1

10

2

10

K/W

BSO613SPV

Z

thJC

single pulse 0.01

0.02

0.05

0.10

0.20

D = 0.50

2011-05-31

Rev.1.4 Page 6

BSO613SPV G

Typ. output characteristic

I

D =

f

(

V

DS);

T

j=25°C

parameter:

t

p = 80 µs

0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V-5.0

V

DS

0.0

-1.0

-2.0

-3.0

-4.0

-5.0

-6.0

-7.0

A

-8.5 BSO613SPV

I

D

V

GS [V]

a

a -3.0

b

b -3.5

c

c -3.7

d

d -4.0

e

e -4.2

f

f -4.5

g

g -4.7

h

h -5.0

i

i -5.5

j

P

tot = 2.50W

j -10.0

Typ. drain-source-on-resistance

R

DS(on) =

f

(

I

D)

parameter:

V

GS

0.0 -1.0 -2.0 -3.0 -4.0 -5.0 A-7.0

I

D

0.00

0.04

0.08

0.12

0.16

0.20

0.24

0.28

0.32

0.36

W

0.42 BSO613SPV

R

DS(on)

b

V

GS [V] =

b

-3.5

c

-3.7

d

-4.0

e

-4.2

f

-4.5

g

-4.7

h

-5.0

i

-5.5

j

-10.0

Typ. transfer characteristics

I

D=

f

(

V

GS )

V

DS

³

2 x

I

D x

R

DS(on)max

parameter:

t

p = 80 µs

0 -1 -2 -3 -4

V

GS -6

V

0

-1

-2

-3

-4

-5

-6

-7

-8

A

-10

I

D

Typ. forward transconductance

g

fs = f(

I

D);

T

j=25°C

parameter:

g

fs

0 -1 -2 -3 -4 -5 -6 -7 -8 A -10

I

D

0

1

2

3

4

5

S

7

g

fs

2011-05-31

Rev.1.4 Page 7

BSO613SPV G

Drain-source on-state resistance

R

DS(on) =

f

(

T

j)

parameter :

I

D = -3.44 A,

V

GS = -10 V

-60 -20 20 60 100 °C 180

T

j

0.00

0.04

0.08

0.12

0.16

0.20

0.24

0.28

W

0.34 BSO613SPV

R

DS(on)

typ

98%

Gate threshold voltage

V

GS(th) =

f

(

T

j)

parameter:

V

GS =

V

DS,

I

D = 1 mA

-60 -20 20 60 100 °C 180

T

j

0.0

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

-3.5

-4.0

V

-5.0

V

GS(th)

typ.

98%

2%

Forward characteristics of reverse diode

I

F =

f

(VSD)

parameter:

T

j , tp = 80 µs

0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V-3.0

V

SD

-1

-10

0

-10

1

-10

2

-10

A

BSO613SPV

I

F

T

j = 25 °C typ

T

j = 25 °C (98%)

T

j = 150 °C typ

T

j = 150 °C (98%)

Typ. capacitances

C

=

f

(

V

DS)

parameter:

V

GS=0V,

f

=1 MHz

0 -5 -10 -15 -20 -25 -30 V-40

V

DS

1

10

2

10

3

10

4

10

pF

C

iss

C

oss

C

rss

2011-05-31

Rev.1.4 Page 8

BSO613SPV G

Typ. gate charge

V

GS =

f

(

Q

Gate)

parameter:

I

D = -3.44 A pulsed

0 4 8 12 16 20 24 nC 30

Q

Gate

0

-2

-4

-6

-8

-10

-12

V

-16 BSO613SPV

V

GS

DS max

V

0,8

DS max

V

0,2

Avalanche energy

E

AS =

f

(

T

j)

para.:

I

D = -3.44 A ,

V

DD = -25 V,

R

GS = 25

25 45 65 85 105 125 °C 165

T

j

0

20

40

60

80

100

120

mJ

160

E

AS

Drain-source breakdown voltage

V

(BR)DSS =

f

(

T

j)

-60 -20 20 60 100 °C 180

T

j

-54

-56

-58

-60

-62

-64

-66

-68

V

-72 BSO613SPV

V

(BR)DSS

2011-05-31

Rev.1.4 Page 9

BSO613SPV G