PD - 91396E IRHNA7160 JANSR2N7432U 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) REF: MIL-PRF-19500/664 (R) TM RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) 0.04 0.04 ID QPL Part Number 51A 51A JANSR2N7432U JANSF2N7432U IRHNA7160 IRHNA3160 100K Rads (Si) 300K Rads (Si) IRHNA4160 500K Rads (Si) 0.04 51A JANSG2N7432U IRHNA8160 1000K Rads (Si) 0.04 51A JANSH2N7432U SMD - 2 HEXFET (R) International Rectifier's RAD-Hard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. TM Features: n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight Units 51 32.5 204 300 2.4 20 500 51 30 7.3 -55 to 150 A W W/C V mJ A mJ V/ns o 300 (for 5s) 3.3 (Typical) C g For footnotes refer to the last page www.irf.com 1 03/02/07 IRHNA7160, JANSR2N7432U Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage 100 -- -- V VGS =0 V, ID = 1.0mA -- 0.11 -- V/C Reference to 25C, ID = 1.0mA -- -- 2.0 16 -- -- -- -- -- -- -- -- 0.040 0.045 4.0 -- 25 250 BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 100 -100 310 53 110 35 150 150 130 -- Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 5300 1600 350 -- -- -- V S( ) BVDSS A nA nC ns nH pF Test Conditions VGS = 12V, ID = 32.5A VGS = 12V, ID = 51A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 32.5A VDS= 80V,VGS=0V VDS = 80V VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 12V, ID = 51A VDS = 50V VDD = 50V, ID = 51A, VGS = 12V, RG = 2.35 Measured from center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD trr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time -- -- -- -- -- -- -- -- -- -- 51 204 1.8 520 6.5 Test Conditions A V ns C Tj = 25C, IS = 51A, VGS = 0V A Tj = 25C, IF = 51A, di/dt 100A/s VDD 50V A Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJPCB Junction-to-Case Junction-to-PC Board Min Typ Max -- -- -- 1.6 0.42 -- Units C/W Test Conditions Solder to a 1" sq. copper clad PC Board Note: Corresponding Spice and Saber models are available on the International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHNA7160, JANSR2N7432U International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) VSD 100K Rads(Si)1 Drain-to-Source Breakdown Voltage Gate Threshold Voltage A Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Diode Forward Voltage A 300K-1000KRads(Si)2 Min Max Min Max 100 2.0 -- -- -- -- -- 4.0 100 -100 25 0.045 100 1.25 -- -- -- -- -- 4.5 100 -100 50 0.062 -- 1.8 -- 1.8 Units Test Conditions V VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS = 80V, VGS =0V VGS = 12V, ID =32.5A nA A V VGS = 0V, IS = 51A 1. Part number IRHNA7160 (JANSR2N7432U) 2. Part numbers IRHNA3160 (JANSF2N7432U), IRHNA4160 (JANSG2N7432U) and IRHNA8160 (JANSH2N7432U) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Ion Cu Br LET (MeV/(mg/cm2)) 28 36.8 Energy (MeV) 285 305 VDS(V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 43 100 100 100 80 60 39 100 90 70 50 -- 120 100 VDS 80 Cu Br 60 40 20 0 0 -5 -10 -15 -20 -25 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNA7160, JANSR2N7432U 1000 Pre-Irradiation 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V I D, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 5.0V 10 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 10 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 3.0 TJ = 25 C TJ = 150 C 10 V DS = 50V 20s PULSE WIDTH 5 6 7 8 9 10 11 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 10 100 Fig 2. Typical Output Characteristics 1000 1 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 20s PULSE WIDTH TJ = 150 C 5.0V VDS , Drain-to-Source Voltage (V) I D , Drain-to-Source Current (A) VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP TOP 12 ID = 51A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation 10000 20 6000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 8000 C, Capacitance (pF) IRHNA7160, JANSR2N7432U Ciss 4000 Coss 2000 Crss 0 1 10 ID = 51A 16 12 8 4 0 100 FOR TEST CIRCUIT SEE FIGURE 13 0 VDS , Drain-to-Source Voltage (V) 40 80 120 160 200 240 280 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) ISD , Reverse Drain Current (A) VDS = 80V VDS = 50V VDS = 20V 100 TJ = 150 C 10 100 100us 1ms 10 10ms TJ = 25 C 1 0.0 VGS = 0 V 0.5 1.0 1.5 2.0 2.5 3.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 3.5 1 TC = 25 C TJ = 150 C Single Pulse 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHNA7160, JANSR2N7432U Pre-Irradiation 60 RD VDS 50 V GS D.U.T. ID , Drain Current (A) RG + - VDD 40 V GS 30 Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit VDS 10 0 90% 25 50 75 100 125 150 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.1 0.01 0.001 0.00001 0.20 0.10 0.05 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNA7160, JANSR2N7432U L D.U.T RG VGS 20V IAS DRIVER + - VDD 0.01 tp TOP 1000 15V VDS EAS , Single Pulse Avalanche Energy (mJ) 1200 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS A BOTTOM ID 23A 32A 51A 800 600 400 200 0 25 50 75 100 125 Starting TJ , Junction Temperature( C) 150 tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K QG 12 V QGS .2F .3F D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com 12V IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHNA7160, JANSR2N7432U Pre-Irradiation Foot Notes: A Repetitive Rating; Pulse width limited by maximum junction temperature. A VDD = 25V, starting TJ = 25C, L= 0.38mH Peak IL = 51A, VGS = 12V A ISD 51A, di/dt 410A/s, VDD 100V, TJ 150C A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 80 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions -- SMD-2 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/2007 8 www.irf.com