Absolute Maximum Ratings
Parameter Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 51
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 32.5
IDM Pulsed Drain Current À204
PD @ TC = 25°C Max. Power Dissipation 300 W
Linear Derating Factor 2.4 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy Á500 mJ
IAR Avalanche Current À51 A
EAR Repetitive Avalanche Energy À30 mJ
dv/dt Peak Diode Recovery dv/dt Â7.3 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Pckg. Mounting Surface Temp. 300 (for 5s)
Weight 3.3 (Typical) g
Pre-Irradiation
International Rectifier’s RAD-HardTM HEXFET®
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
oC
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
03/02/07
www.irf.com 1
Product Summary
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHNA7160 100K Rads (Si) 0.04Ω51A JANSR2N7432U
IRHNA3160 300K Rads (Si) 0.04Ω51A JANSF2N7432U
IRHNA4160 500K Rads (Si) 0.04Ω51A JANSG2N7432U
IRHNA8160 1000K Rads (Si) 0.04Ω51A JANSH2N7432U
Features:
nSingle Event Effect (SEE) Hardened
nLow RDS(on)
nLow Total Gate Charge
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
nSurface Mount
nLight Weight
For footnotes refer to the last page
IRHNA7160
JANSR2N7432U
100V, N-CHANNEL
REF: MIL-PRF-19500/664
RAD-Hard
™
HEXFET
®
TECHNOLOGY
SMD - 2
PD - 91396E
2www.irf.com
IRHNA7160, JANSR2N7432U Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 — — V VGS =0 V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.11 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source — — 0.040 VGS = 12V, ID = 32.5A
On-State Resistance — — 0.045 ΩVGS = 12V, ID = 51A
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA
gfs Forward Transconductance 16 — — S ( )V
DS > 15V, IDS = 32.5A
IDSS Zero Gate Voltage Drain Current — — 25 VDS= 80V,VGS=0V
— — 250 VDS = 80V
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge — — 310 VGS = 12V, ID = 51A
Qgs Gate-to-Source Charge — — 53 nC VDS = 50V
Qgd Gate-to-Drain (‘Miller’) Charge — — 110
td(on) Turn-On Delay Time — — 35 VDD = 50V, ID = 51A,
trRise Time — — 150 VGS = 12V, RG = 2.35Ω
td(off) Turn-Off Delay Time — — 150
tfFall Time — — 130
LS + LDTotal Inductance — 4.0 —
Ciss Input Capacitance — 5300 — VGS = 0V, VDS = 25V
Coss Output Capacitance — 1600 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 350 —
nA
Ω
nH
ns
µA
Note: Corresponding Spice and Saber models are available on the International Rectifier Website.
For footnotes refer to the last page
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 0.42
RthJPCB Junction-to-PC Board — 1.6 — Solder to a 1” sq. copper clad PC Board
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — 51
ISM Pulse Source Current (Body Diode) À— — 204
VSD Diode Forward Voltage — — 1.8 V Tj = 25°C, IS = 51A, VGS = 0V Ã
trr Reverse Recovery Time — — 520 ns Tj = 25°C, IF = 51A, di/dt ≥ 100A/µs
QRR Reverse Recovery Charge — — 6.5 µC VDD ≤ 50V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Measured from center of drain
pad to center of source pad
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Pre-Irradiation IRHNA7160, JANSR2N7432U
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
Fig a. Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Ion LET Energy Range VDS(V)
(MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu 28 285 43 100 100 100 80 60
Br 36.8 305 39 100 90 70 50 —
0
20
40
60
80
100
120
0 -5 -10 -15 -20 -25
VGS
VDS
Cu
Br
1. Part number IRHNA7160 (JANSR2N7432U)
2. Part numbers IRHNA3160 (JANSF2N7432U), IRHNA4160 (JANSG2N7432U) and IRHNA8160 (JANSH2N7432U)
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter 100K Rads(Si)1 300K-1000KRads(Si)2
Units
Test Conditions
Min Max Min Max
BVDSS Drain-to-Source Breakdown Voltage 100 — 100 — V VGS = 0V, ID = 1.0mA
VGS(th) Gate Threshold Voltage Ã2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0mA
IGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20V
IGSS Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V
IDSS Zero Gate Voltage Drain Current — 25 — 50 µA VDS = 80V, VGS =0V
RDS(on) Static Drain-to-Source à — 0.045 — 0.062 Ω VGS = 12V, ID =32.5A
On-State Resistance (TO-3)
VSD Diode Forward Voltage à — 1.8 — 1.8 V VGS = 0V, IS = 51A
4www.irf.com
IRHNA7160, JANSR2N7432U Pre-Irradiation
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
10
100
1000
1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
1
10
100
1000
5678910 11 12
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
12V
51A
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Pre-Irradiation IRHNA7160, JANSR2N7432U
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
2000
4000
6000
8000
10000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
040 80 120 160 200 240 280
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
51A
V = 20V
DS
V = 50V
DS
V = 80V
DS
1
10
100
1000
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1
10
100
1000
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
6www.irf.com
IRHNA7160, JANSR2N7432U Pre-Irradiation
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
VGS
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0
10
20
30
40
50
60
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
www.irf.com 7
Pre-Irradiation IRHNA7160, JANSR2N7432U
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
25 50 75 100 125 150
0
200
400
600
800
1000
1200
Starting T , Junction Temperature( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
23A
32A
51A
8www.irf.com
IRHNA7160, JANSR2N7432U Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L= 0.38mH
Peak IL = 51A, VGS = 12V
 ISD ≤ 51A, di/dt ≤ 410A/µs,
VDD ≤ 100V, TJ ≤ 150°C
Case Outline and Dimensions — SMD-2
Foot Notes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/2007
