AUIRFZ44Z
AUIRFZ44ZS
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
1 2017-09-25
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
VDSS 55V
RDS(on) max. 13.9m
ID 51A
TO-220AB
AUIRFZ44Z D2Pak
AUIRFZ44ZS
S
D
G
S
D
G
G D S
Gate Drain Source
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
AUIRFZ44Z TO-220 Tube 50 AUIRFZ44Z
AUIRFZ44ZS D2-Pak Tube 50 AUIRFZ44ZS
Tape and Reel Left 800 AUIRFZ44ZSTRL
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 51
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9) 36
IDM Pulsed Drain Current 200
PD @TC = 25°C Maximum Power Dissipation 80 W
Linear Derating Factor 0.53 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 86
mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value 105
IAR Avalanche Current See Fig.15,16, 12a, 12b A
EAR Repetitive Avalanche Energy mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 1.87
°C/W
RCS Case-to-Sink, Flat, Greased Surface 0.50 –––
RJA Junction-to-Ambient ––– 62
RJA Junction-to-Ambient ( PCB Mount, steady state) 40
AUIRFZ44Z/ZS
2 2017-09-25
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
Limited by TJmax, starting TJ = 25°C, L = 0.18mH, RG = 25, IAS = 31A, VGS =10V. Part not recommended for use above this value.
I
SD 31A, di/dt 840A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 1.0ms; duty cycle 2%.
C
oss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population 100% tested to this value in production.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R is rated at TJ of approximately 90°C.
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.054 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 11.1 13.9 m VGS = 10V, ID = 31A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Trans conductance 22 ––– ––– S VDS = 25V, ID = 31A
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 55V, VGS = 0V
––– ––– 250 VDS = 55V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– 29 43
nC
ID = 31A
Qgs Gate-to-Source Charge ––– 7.2 11 VDS = 44V
Qgd Gate-to-Drain Charge ––– 12 18 VGS = 10V
td(on) Turn-On Delay Time ––– 14 –––
ns
VDD = 28V
tr Rise Time ––– 68 ––– ID = 31A
td(off) Turn-Off Delay Time ––– 33 ––– RG= 15
tf Fall Time ––– 41 ––– VGS = 10V
LD Internal Drain Inductance ––– 4.5 –––
nH
Between lead,
6mm (0.25in.)
LS Internal Source Inductance ––– 7.5 ––– from package
and center of die contact
Ciss Input Capacitance ––– 1420 –––
pF
VGS = 0V
Coss Output Capacitance ––– 240 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz,See Fig.5
Coss Output Capacitance ––– 830 ––– VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
Coss Output Capacitance ––– 190 ––– VGS = 0V, VDS = 44V ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 300 ––– VGS = 0V, VDS = 0V to 44V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 51
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 200 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C,IS = 31A,VGS = 0V
trr Reverse Recovery Time ––– 23 35 ns TJ = 25°C ,IF = 31A , VDD = 28V
Qrr Reverse Recovery Charge ––– 17 26 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
AUIRFZ44Z/ZS
3 2017-09-25
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 1 Typical Output Characteristics
Fig. 4 Typical Forward Trans conductance
vs. Drain Current
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
60µs PULSE WIDTH
Tj = 25°C
4.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
60µs PULSE WIDTH
Tj = 175°C
2 4 6 8 10 12
VGS, Gate-to-Source Voltage (V)
1.0
10
100
1000
ID, Drain-to-Source Current )
TJ = 25°C
TJ = 175°C
VDS = 15V
60µs PULSE WIDTH
0 1020304050
ID,Drain-to-Source Current (A)
0
10
20
30
40
50
60
Gfs, Forward Transconductance (S)
TJ = 25°C
TJ = 175°C
VDS = 10V
AUIRFZ44Z/ZS
4 2017-09-25
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 5 10 15 20 25 30
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VGS, Gate-to-Source Voltage (V)
VDS= 44V
VDS= 28V
VDS= 11V
ID= 31A
0.0 0.5 1.0 1.5 2.0
VSD, Source-to-Drain Voltage (V)
0.01
0.10
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
Tc = 25°C
Tj = 175°C
Single Pulse
AUIRFZ44Z/ZS
5 2017-09-25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
5
10
15
20
25
30
35
40
45
50
55
ID, Drain Current (A)
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 31A
VGS = 10V
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
C
C
Ci= iRi
Ci= iRi
Ri (°C/W) i (sec)
0.8487 0.00044
0.6254 0.00221
0.3974 0.01173
AUIRFZ44Z/ZS
6 2017-09-25
Fig 12c. Maximum Avalanche Energy vs. Drain Current
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Gate Charge Test Circuit
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 13b. Gate Charge Waveform
Fig 14. Threshold Voltage vs. Temperature
25 50 75 100 125 150 175
Starting T J , Junction Temperature (°C)
0
50
100
150
200
250
300
350
400
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 3.8A
5.5A
BOTTOM 31A
-75 -50 -25 025 50 75 100 125 150 175 200
TJ , Temperature ( °C )
1.0
2.0
3.0
4.0
VGS(th) Gate threshold Voltage (V)
ID = 250µA
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7 2017-09-25
Fig 15. Avalanche Current vs. Pulse width
Fig 16. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
t
av = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
Z
thJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses
0.01
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 31A
AUIRFZ44Z/ZS
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Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
AUIRFZ44Z/ZS
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TO-220AB Part Marking Information
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
YWWA
XX XX
Date Code
Y= Year
WW= Work Week
AUFZ44Z
Lot Code
Part Number
IR Logo
AUIRFZ44Z/ZS
10 2017-09-25
D2Pak (TO-263AB) Part Marking Information
YWWA
XX XX
Date Code
Y= Year
WW= Work Week
AUFZ44ZS
Lot Code
Part Number
IR Logo
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
AUIRFZ44Z/ZS
11 2017-09-25
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
AUIRFZ44Z/ZS
12 2017-09-25
† Highest passing voltage.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level
TO-220 Pak N/A
D2-Pak MSL1
ESD
Machine Model Class M2 (+/- 200V)†
AEC-Q101-002
Human Body Model Class H1A (+/- 500V)†
AEC-Q101-001
Charged Device Model Class C5 (+/- 1125V)†
AEC-Q101-005
RoHS Compliant Yes
Revision History
Date Comments
12/4/2015 Updated datasheet with corporate template
Corrected ordering table on page 1.
09/25/17 Corrected typo error on part marking on pages 9,10.
