N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 – FEB 94
FEATURES
* 60 Volt VDS
*R
DS(on)=5Ω
REFER TO ZVN3306A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 60 V
Continuo us Drain Cur rent at Tamb = 25°C ID270 mA
Pulsed Drain Current IDM 3A
Gate Source Voltage VGS ± 20 V
Power Dissipation at Tamb = 25°C Ptot 625 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICA L CH ARA CTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage BVDSS 60 V ID=100µA, VGS=0V
Gate-Source
Breakdown Voltage VGS(th) 0.8 2.5 V ID=1mA, VDS= VGS
Gate Body Leakage IGSS 100 nA VGS=± 20V, VDS=0V
Zero Ga te Voltage
Drain Current (1) IDSS 10 µAVDS=60 V, VGS=0V
On State Drain
Current(1) ID(on) 750 mA VDS=15 V, VGS=10V
Static Dr ain Source On
State Resistance (1) RDS(on) 5.0
7.5 Ω
ΩVGS=10V,ID=500mA
VGS=5V, ID=200mA
Forward
Transconductance
(1)(2)
gfs 100 mS VDS=15V,ID=500mA
Input Capacitance (2) Ciss 60 pF
Common So urce
Output Capacita nce (2) Coss 25 pF VDS=25 V, VGS=0V
f=1MHz
Reverse Transfer
Capacitance (2) Crss 5pF
Turn-On Time (2)(3) t(on) 10 ns VDD
≈15V, ID=600mA
Turn-Off Time (2)(3) t(off) 10 ns
E-Line
TO92 Compatible
VN10LP
3-90
D
G
S
