MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# S9014 Features * * * * * * TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.1A Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: S9014 NPN Silicon Transistors Pin Configuration TO-92 A C E BE Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units 50 --- Vdc 45 --- Vdc 5.0 --- Vdc --- 0.1 uAdc --- 0.1 uAdc --- 0.1 uAdc B OFF CHARACTERISTICS V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO Collector-Base Breakdown Voltage (IC=100uAdc, IE =0) Collector-Emitter Breakdown Voltage (IC=0.1mAdc, IB =0) Emitter-Base Breakdown Voltage (IE =100uAdc, IC=0) Collector Cutoff Current (VCB=50Vdc, IE =0) Collector Cutoff Current (VCE =35Vdc, IB =0) Emitter Cutoff Current (VEB =3.0Vdc, IC=0) C D ON CHARACTERISTICS hFE VCE(sat) VBE(sat) DC Current Gain (IC=1.0mAdc, VCE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=100mAdc, IB =5.0mAdc) Base-Emitter Saturation Voltage (IC=100mAdc, IB =5.0mAdc) 60 1000 --- --- 0.3 Vdc --- 1.0 Vdc G SMALL-SIGNAL CHARACTERISTICS fT DIMENSIONS Transistor Frequency (IC=10mAdc, VCE=5.0Vdc, f=30MHz) 150 --- MHz CLASSIFICATION OF HFE Rank Range B 120-200 C 200-400 D 400-600 DIM A B C D E G INCHES MIN .170 .170 .550 .010 .130 .010 MAX .190 .190 .590 .020 .160 .104 MM MIN 4.33 4.30 13.97 0.36 3.30 2.44 MAX 4.83 4.83 14.97 0.56 3.96 2.64 NOTE www.mccsemi.com Revision: 3 2004/07/26