Hardware
Documentation
Differential Hall-Effect Sensor
IC Family
HAL® 320
Edition Jan. 27, 2012
DSH000017_003EN
Data Sheet
HAL 320 DATA SHEET
2Jan. 27, 2012; DSH000017_003EN Micronas
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document
are believed to be accurate and reliable. The software
and proprietary information contained therein may be
protected by copyright, patent, trademark and/or other
intellectual property rights of Micronas. All rights not
expressly granted remain reserved by Micronas.
Micronas assumes no liability for errors and gives no
warranty representation or guarantee regarding the
suitability of its products for any particular purpose due
to these specifications.
By this publication, Micronas does not assume respon-
sibility for patent infringements or other rights of third
parties which may result from its use. Commercial con-
ditions, product availability and delivery are exclusively
subject to the respective order confirmation.
Any information and data which may be provided in the
document can and do vary in different applications,
and actual performance may vary over time.
All operating parameters must be validated for each
customer application by customers’ technical experts.
Any new issue of this document invalidates previous
issues. Micronas reserves the right to review this doc-
ument and to make changes to the document’s con-
tent at any time without obligation to notify any person
or entity of such revision or changes. For further
advice please contact us directly.
Do not use our products in life-supporting systems,
aviation and aerospace applications! Unless explicitly
agreed to otherwise in writing between the parties,
Micronas’ products are not designed, intended or
authorized for use as components in systems intended
for surgical implants into the body, or other applica-
tions intended to support or sustain life, or for any
other application in which the failure of the product
could create a situation where personal injury or death
could occur.
No part of this publication may be reproduced, photo-
copied, stored on a retrieval system or transmitted
without the express written consent of Micronas.
Micronas Trademarks
–HAL
Patents
Choppered Offset Compensation protected by
Micronas patents no. US5406202A.
Third-Party Trademarks
All other brand and product names or company names
may be trademarks of their respective companies.
Contents
Page Section Title
Micronas Jan. 27, 2012; DSH000017_003EN 3
DATA SHEET HAL 320
4 1. Introduction
41.1.Features:
4 1.2. Marking Code
4 1.3. Operating Junction Temperature Range (TJ)
5 1.4. Hall Sensor Package Codes
5 1.5. Solderability and Welding
5 1.6. Pin Connections
6 2. Functional Description
7 3. Specifications
7 3.1. Outline Dimensions
12 3.2. Dimensions of Sensitive Area
12 3.3. Package Parameters and Position of Sensitive Areas
12 3.4. Absolute Maximum Ratings
12 3.4.1. Storage and Shelf Life
13 3.5. Recommended Operating Conditions
13 3.6. Characteristics
15 3.7. Magnetic Characteristics
20 4. Application Notes
20 4.1. Ambient Temperature
20 4.2. Extended Operating Conditions
20 4.3. Start-up Behavior
21 4.4. EMC and ESD
22 5. Data Sheet History
HAL 320 DATA SHEET
4Jan. 27, 2012; DSH000017_003EN Micronas
Differential Hall-Effect Sensor IC
Release Note: Revision bars indicate significant
changes to the previous edition.
1. Introduction
The HAL 320 is a differential Hall switch produced in
CMOS technology. The sensor includes two tempera-
ture-compensated Hall plates (2.25 mm apart) with
active offset compensation, a differential amplifier with
a Schmitt trigger, and an open-drain output transistor
(see Fig. 2–1).
The HAL 320 is a differential sensor which responds to
spatial differences of the magnetic field. The Hall volt-
ages at the two Hall plates, S1 and S2, are amplified
with a differential amplifier. The differential signal is
compared with the actual switching level of the internal
Schmitt trigger. Accordingly, the output transistor is
switched on or off.
The sensor has a bipolar switching behavior and
requires positive and negative values of B = BS1
BS2 for correct operation.
Basically, there are two ways to generate the differen-
tial signal B:
Rotating a multi-pole-ring in front of the branded side
of the package (see Fig. 3–1, Fig. 3–2, and Fig. 3–3;
Please use HAL 300 only).
– Back-bias applications: A magnet on the back side
of the package generates a back-bias field at both
Hall plates. The differential signal B results from
the magnetic modulation of the back-bias field by a
rotating ferromagnetic target (Please use HAL 320
only).
The active offset compensation leads to constant mag-
netic characteristics over supply voltage and tempera-
ture.
The sensor is designed for industrial and automotive
applications and operates with supply voltages from
4.5 V to 24 V in the ambient temperature range from
–40 °C up to 150 °C.
The HAL 320 is an ideal sensor for target wheel appli-
cations, ignition timing, anti-lock brake systems, and
revolution counting in extreme automotive and indus-
trial environments
The HAL 320 is available in the SMD-package
SOT89B-2 and in the leaded versions TO92UA-3 and
TO92UA-4.
1.1. Features:
– Distance between Hall plates: 2.25 mm
– Operates from 4.5 V to 24 V supply voltage
– Switching offset compensation at 62 kHz
– Overvoltage protection
– Reverse-voltage protection at VDD-pin
– Short-circuit protected open-drain output by thermal
shutdown
– Operates with magnetic fields from DC to 10 kHz
– Output turns low with magnetic south pole on
branded side of package and with a higher magnetic
flux density in sensitive area S1 as in S2
– On-chip temperature compensation circuitry mini-
mizes shifts of the magnetic parameters over tem-
perature and supply voltage range
– The decrease of magnetic flux density caused by
rising temperature in the sensor system is compen-
sated by a built-in negative temperature coefficient
of hysteresis
1.2. Marking Code
All Hall sensors have a marking on the package sur-
face (branded side). This marking includes the name
of the sensor and the temperature range.
1.3. Operating Junction Temperature Range (TJ)
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
The HAL 320 is available in following temperature
ranges:
A: TJ = –40 °C to +170 °C
I: TJ = –20 °C to +125 °C
C: TJ = 0 °C to +85 °C
The relationship between ambient temperature (TA)
and junction temperature (TJ) is explained in section
4.1. on page 20.
Type Temperature Range
A I C
HAL 320 320A 320I 320C
DATA SHEET HAL 320
Micronas Jan. 27, 2012; DSH000017_003EN 5
1.4. Hall Sensor Package Codes
Hall sensors are available in a wide variety of packag-
ing versions and quantities. For more detailed informa-
tion, please refer to the brochure: “Hall Sensors.
Ordering Codes, Packaging, Handling”.
1.5. Solderability and Welding
Soldering
During soldering reflow processing and manual
reworking, a component body temperature of 260 C
should not be exceeded.
Welding
Device terminals should be compatible with laser and
electrical resistance welding. Please, note that the
success of the welding process is subject to different
welding parameters which will vary according to the
welding technique used. A very close control of the
welding parameters is absolutely necessary in order to
reach satisfying results. Micronas, therefore, does not
give any implied or express warranty as to the ability to
weld the component.
1.6. Pin Connections
Fig. 1–1: Pin configuration
HALXXXPA-T
Temperature Range: A,I,C
Package: SF for SOT89B-2,
UA for TO92UA
Type: 320
Example: HAL320UA-A
Type: 320
Package: TO92UA
Temperature Range: TJ = 40 C to +170 C
1VDD
2GND
3OUT
HAL 320 DATA SHEET
6Jan. 27, 2012; DSH000017_003EN Micronas
2. Functional Description
This Hall effect sensor is a monolithic integrated circuit
with two Hall plates 2.25 mm apart that switches in
response to differential magnetic fields. If magnetic
fields with flux lines perpendicular to the sensitive
areas are applied to the sensor, the biased Hall plates
force Hall voltages proportional to these fields. The dif-
ference of the Hall voltages is compared with the
actual threshold level in the comparator. The tempera-
ture-dependent bias increases the supply voltage of
the Hall plates and adjusts the switching points to the
decreasing induction of magnets at higher tempera-
tures. If the differential magnetic field exceeds the
threshold levels, the open drain output switches to the
appropriate state. The builtin hysteresis eliminates
oscillation and provides switching behavior of the out-
put without oscillation.
Magnetic offset caused by mechanical stress at the
Hall plates is compensated for by using the “switching
offset compensation technique”: An internal oscillator
provides a two phase clock (see Fig. 2–2). The differ-
ence of the Hall voltages is sampled at the end of the
first phase. At the end of the second phase, both sam-
pled differential Hall voltages are averaged and com-
pared with the actual switching point. Subsequently,
the open drain output switches to the appropriate
state. The amount of time that elapses from crossing
the magnetic switch level to the actual switching of the
output can vary between zero and 1/fosc.
Shunt protection devices clamp voltage peaks at the
Output-Pin and VDD-Pin together with external series
resistors. Reverse current is limited at the VDD-Pin by
an internal series resistor up to 15 V. No external
reverse protection diode is needed at the VDD-Pin for
values ranging from 0 V to –15 V.
Fig. 2–1: HAL 320 block diagram
Fig. 2–2: Timing diagram
HAL320
Temperature
Dependent
Bias
Switch
Hysteresis
Control
Comparator
Output
VDD
1
OUT
3
Clock
GND
2
Short Circuit &
Overvoltage
Protection
Reverse
Voltage &
Overvoltage
Protection
Hall Plate
S1
Hall Plate
S2
t
VOL
VOUT
1/fosc = 16 µs
VOH
B
BON
fosc
t
t
tft
IDD
t
DATA SHEET HAL 320
Micronas Jan. 27, 2012; DSH000017_003EN 7
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
SOT89B-2: Plastic Small Outline Transistor package, 4 leads, with two sensitive areas
Ordering code: SF
Weight approximately 0.034 g
HAL 320 DATA SHEET
8Jan. 27, 2012; DSH000017_003EN Micronas
Fig. 3–2:
TO92UA-4: Plastic Transistor Standard UA package, 3 leads, spread
Weight approximately 0.105 g
DATA SHEET HAL 320
Micronas Jan. 27, 2012; DSH000017_003EN 9
Fig. 3–3:
TO92UA-3: Plastic Transistor Standard UA package, 3 leads, spread
Weight approximately 0.105 g
HAL 320 DATA SHEET
10 Jan. 27, 2012; DSH000017_003EN Micronas
Fig. 3–4:
TO92UA/UT: Dimensions ammopack inline, not spread
DATA SHEET HAL 320
Micronas Jan. 27, 2012; DSH000017_003EN 11
Fig. 3–5:
TO92UA/UT: Dimensions ammopack inline, spread
HAL 320 DATA SHEET
12 Jan. 27, 2012; DSH000017_003EN Micronas
3.2. Dimensions of Sensitive Area
0.08 mm 0.17 mm
3.3. Package Parameters and Position of Sensitive Areas
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than abso-
lute maximum-rated voltages to this high-impedance circuit.
All voltages listed are referenced to ground (GND).
3.4.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for one year from the date code on the package.
SOT89B-2 TO92UA-3/-4
x1 = 1.125 mm (nominal values)
x2 = 1.125 mm (nominal values)
x1 x2 = 2.25 mm (nominal values)
y= 0.95 mm (nominal values) y= 1.0 mm (nominal values)
Bd = 0.2 mm
n.a. H1= min. 21 mm
max. 23 mm
Symbol Parameter Pin Name Min. Max. Unit
VDD Supply Voltage 1 15 281) V
VOOutput Voltage 3 0.3 281) V
IOContinuous Output On Current 3 30 mA
TJJunction Temperature Range 40
40
150
1702)
C
1) as long as TJmax is not exceeded
2) t < 1000 h
DATA SHEET HAL 320
Micronas Jan. 27, 2012; DSH000017_003EN 13
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteris-
tics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device.
All voltages listed are referenced to ground (GND).
3.6. Characteristics
at TJ = 40 °C to +170 °C, VDD = 4.5 V to 24 V, GND = 0 V
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 12 V.
For all other temperatur ranges this table is also valid, but only in the junction temperature range defined by the tem-
peratur grade (Example: For C-Type this table is limited to TJ= 0 °C to +85 °C).
Symbol Parameter Pin Name Min. Max. Unit
VDD Supply Voltage 1 4.5 24 V
IOContinuous Output on Current 3 20 mA
VOOutput Voltage 3 24 V
Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions
IDD Supply Current 1 2.8 4.7 6.8 mA TJ = 25 °C
IDD Supply Current over
Temperature Range
1 1.8 4.7 7.5 mA
VDDZ Overvoltage Protection
at Supply
128.5 32.5 V IDD = 25 mA, TJ = 25 C,
t = 20 ms
VOZ Overvoltage Protection at Output 3 28 32.5 V IOH = 25 mA, TJ = 25 C,
t = 20 ms
VOL Output Voltage over
Temperature Range
3180 400 mV IOL = 20 mA
IOH Output Leakage Current over
Temperature Range
30.06 10 µA VOH = 4.5 V...24 V,
B < BOFF
,TJ 150 C,
fosc Internal Oscillator Chopper
Frequency
62 kHz
ten(O) Enable Time of Output after
Setting of VDD
335 µs VDD = 12 V,
B > BON+ 2 mT or
B < BOFF 2mT
trOutput Rise Time 3 80 400 ns VDD = 12 V,
RL = 820 ,
CL = 20 pF
tfOutput Fall Time 3 45 400 ns VDD = 12 V,
RL = 820 ,
CL = 20 pF
RthJSB
case
SOT89B-2
Thermal Resistance Junction to
Substrate Backside
150 200 K/W Fiberglass Substrate
30 mm x 10 mm x 1.5 mm
(see Fig. 3–6)
RthJS
case
TO92UA-3
TO92UA-4
Thermal Resistance Junction to
Soldering Point
150 200 K/W
HAL 320 DATA SHEET
14 Jan. 27, 2012; DSH000017_003EN Micronas
Fig. 3–6: Recommended footprint SOT89B,
Dimensions in mm
Note: All dimensions are for reference only. The pad
size may vary depending on the requirements of
the soldering process.
1.05
1.05
1.80
0.50
1.50
1.45
2.90
DATA SHEET HAL 320
Micronas Jan. 27, 2012; DSH000017_003EN 15
3.7. Magnetic Characteristics
at TJ = 40 °C to +170 °C, VDD = 4.5 V to 24 V,
Typical Characteristics for VDD = 12 V.
Magnetic flux density values of switching points (Condition: 10 mT < B0 < 10 mT).
Positive flux density values refer to the magnetic south pole at the branded side of the package. B = BS1 BS2
In back-biased applications, sensitivity mismatch between the two Hall plates S1 and S2 can lead to an additional off-
set of the magnetic switching points. In back-biased applications with the magnetic preinduction B0, this sensitivity
mismatch generates the magnetic offset BOFFSETbb = |S1 S2|/S1 B0 + BOFFSET
.
The magnetic switching points are checked at room temperature at a magnetic preinduction of B0 = 150 mT. These
magnetic parameters may change under external pressure and during the lifetime of the sensor.
Fig. 3–7: Definition of switching points and hysteresis
Parameter 40 °C 25 °C 85 °C 125 °C 170 °C Unit
Min. Typ. Max
.
Min. Typ. Max
.
Min. Typ. Max
.
Min. Typ. Max
.
Min. Typ. Max
.
On point BON
B > BON
1.5 1.2 2.5 1.5 1.2 2.5 2.5 1.1 3.5 2.5 1.1 3.5 2.5 1.1 3.5 mT
Off point BOFF
B > BOFF
2.5 0.6 1.5 2.5 0.6 1.5 3.5 0.4 2.5 3.5 0.4 2.5 3.5 0.4 2.5 mT
Hysteresis
BHYS = BON BOFF
1 1.8 4 1 1.8 4 0.8 1.5 4 0.8 1.5 4 0.8 1.5 4 mT
Offset
BOFFSET = (BON BOFF)/2
20.32 20.32 30.43 30.43 30.43 mT
Parameter 40 °C 25 °C 170 °C Unit
Sensivity mismatch1) |S1 S2|/S1 1.52) 1.02) 0.52) %
1)Mechanical stress from packaging can influence sensivity mismatch.
2)All values are typical values.
Parameter 25 °C Unit
Min. Typ. Max.
On point BONbb 4.5 1.5 5.5 mT
Off point BOFFbb 5.5 0.3 4.5 mT
Hysteresis BHYS 11.84mT
Offset BOFFSETbb 50.6+5mT
BOFF min BON max
BHYS
Output Voltage
0
BOFF BON
ΔB = BS1 – BS2
VOH
VOL
HAL 320 DATA SHEET
16 Jan. 27, 2012; DSH000017_003EN Micronas
–2
–1.5
–1.0
–0.5
0.0
0.5
1.0
1.5
2.0
0 5 10 15 20 25 30 V
mT
VDD
BON
BOFF BON
BOFF
TA = –40 °C
TA = 25 °C
TA = 150 °C
TA = 100 °C
Fig. 3–8: Magnetic switch points
versus supply voltage
–2
–1.5
–1.0
–0.5
0.0
0.5
1.0
1.5
2.0
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
VDD
BON
BOFF BON
BOFF
TA = –40 °C
TA = 25 °C
TA = 170 °C
TA = 100 °C
Fig. 3–9: Magnetic switch points
versus supply voltage
–2
–1.5
–1.0
–0.5
0.0
0.5
1.0
1.5
2.0
–50 0 50 100 150 200 °C
mT
BON
BOFF
Fig. 3–10: Magnetic switch points
versus temperature
VDD = 12 V
TA
–15
–10
–5
0
5
10
15
20
–15 –10 –5 0 5 10 15 20 25 30 V
mA
VDD
IDD
25
TA = 25 °C
TA = –40 °C
TA = 150 °C
Fig. 3–11: Typical supply current
versus supply voltage
DATA SHEET HAL 320
Micronas Jan. 27, 2012; DSH000017_003EN 17
0
1
2
3
4
5
6
7
8
123456
V
mA
VDD
IDD
TA = –40 °C
TA = 25 °C
TA = 150 °C
Fig. 3–12: Supply current
versus supply voltage
0
1
2
3
4
5
6
7
8
–50 0 50 100 150 200 °C
mA
TA
IDD
VDD = 4.5 V
VDD = 12 V
Fig. 3–13: Supply current
versus ambient temperature
0
100
200
300
400
500
0 5 10 15 20 25 30 V
mV
VDD
VOL
TA = 150 °C
TA = 25 °C
TA = –40 °C
Fig. 3–14: Typical output low voltage
versus supply voltage
IO = 20 mA
0
100
200
300
400
500
–50 0 50 100 150 200 °C
mV
TA
VOL
VDD = 24 V
VDD = 4.5 V
Fig. 3–15: Typical output low voltage
versus ambient temperature
IO = 20 mA
HAL 320 DATA SHEET
18 Jan. 27, 2012; DSH000017_003EN Micronas
0
10
20
30
40
50
60
70
0 5 10 15 20 25 30 V
kHz
VDD
fosc
TA = 25 °C
Fig. 3–16: Typical internal chopper frequency
versus supply voltage
0
10
20
30
40
50
60
70
3 3.5 4.0 4.5 5.0 5.5 6.0 V
kHz
VDD
fosc
TA = 25 °C
Fig. 3–17: Typical internal chopper frequency
versus supply voltage
0
10
20
30
40
50
60
70
–50 0 50 100 150 200
kHz
TA
fosc
VDD = 12 V
°C
Fig. 3–18: Typical internal chopper frequency
versus ambient temperature
–50 0 50 100 150 200
µA
TA
IOH
°C
100
10–1
10–2
10–3
10–4
10–5
101
102
VOH = 24 V
VDD = 5 V
Fig. 3–19: Typical output leakage current
versus ambient temperature
DATA SHEET HAL 320
Micronas Jan. 27, 2012; DSH000017_003EN 19
20 22 24 26 2830
µA
VOH
IOH
V
100
10–1
10–2
10–3
10–4
10–5
101
102
VDD = 5 V
TA = 125 °C
TA = 75 °C
TA = 25 °C
Fig. 3–20: Typical output leakage current
versus output voltage
HAL 320 DATA SHEET
20 Jan. 27, 2012; DSH000017_003EN Micronas
4. Application Notes
Mechanical stress can change the sensitivity of the
Hall plates and an offset of the magnetic switching
points may result. External mechanical stress on the
sensor must be avoided if the sensor is used under
back-biased conditions. This piezo sensitivity of the
sensor IC cannot be completely compensated for by
the switching offset compensation technique.
In order to assure switching the sensor on and off in a
back-biased application, the minimum magnetic modu-
lation of the differential field should amount to more
than 10% of the magnetic preinduction.
If the HAL 320 sensor IC is used in back-biased appli-
cations, please contact our Application Department.
They will provide assistance in avoiding applications
which may induce stress to the ICs. This stress may
cause drifts of the magnetic parameters indicated in
this data sheet.
4.1. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
TJ = TA + T
Under static conditions and continuous operation, the
following equation applies:
T = IDD * VDD * Rth
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for IDD
and Rth, and the max. value for VDD from the applica-
tion.
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
TAmax = TJmax T
4.2. Extended Operating Conditions
All sensors fulfill the electrical and magnetic character-
istics when operated within the Recommended Oper-
ating Conditions (see page 13).
Supply Voltage Below 4.5 V
Typically, the sensors operate with supply voltages
above 3 V, however, below 4.5 V some characteristics
may be outside the specification.
Note: The functionality of the sensor below 4.5 V is
not tested on regular base. For special test con-
ditions, please contact Micronas.
4.3. Start-up Behavior
Due to the active offset compensation, the sensors
have an initialization time (enable time ten(O)) after
applying the supply voltage. The parameter ten(O) is
specified in the Electrical Characteristics
(see page 13).
During the initialization time, the output state is not
defined and the output can toggle. After ten(O), the out-
put will be low if the applied magnetic field B is above
BON. The output will be high if B is below BOFF
.
For magnetic fields between BOFF and BON, the output
state of the HAL sensor after applying VDD will be
either low or high. In order to achieve a well-defined
output state, the applied magnetic field must be above
BONmax, respectively, below BOFFmin.
DATA SHEET HAL 320
Micronas Jan. 27, 2012; DSH000017_003EN 21
4.4. EMC and ESD
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 4–1). The series resistor
and the capacitor should be placed as closely as pos-
sible to the HAL sensor.
Applications with this arrangement should pass the
EMC tests according to the product standard
ISO 7637.
Fig. 4–1: Test circuit for EMC investigations
RV
220
VEMC
VP
4.7 nF
VDD
OUT
GND
1
2
3
RL1.2 k
20 pF
HAL 320 DATA SHEET
22 Jan. 27, 2012; DSH000017_003EN Micronas
Micronas GmbH
Hans-Bunte-Strasse 19 D-79108 Freiburg P.O. Box 840 D-79008 Freiburg, Germany
Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com
5. Data Sheet History
1. Final data sheet: “HAL320 Differential Hall Effect
– Sensor IC”, July 15, 1998, 6251-439-1DS. First
release of the final data sheet.
2. Final data sheet: “HAL320 Differential Hall Effect
Sensor IC”, Oct. 19, 2004, 6251-439-2DS. Second
release of the final data sheet. Major changes:
– temperature ranges “C” and “E” removed
– new package diagrams for SOT89B-2 and
TO92UA-4
– package diagram for TO92UA-3 added
– ammopack diagrams for TO92UA-3/-4 added
– new diagram for SOT89B footprint
3. Final data sheet: “HAL320 Differential Hall Effect
Sensor IC”, Nov. 25, 2008, DSH000017_002. Third
release of the final data sheet. Major changes:
– Section 1.5. “Solderability and Welding” updated
– package diagrams updated
4. Final data sheet: “Differential Hall-Effect Sensor IC”,
Jan. 27, 2012, DSH000017_003EN. Fourth release
of the final data sheet. Major changes:
– temperature ranges “I” and “C” added
