PD - 97123A IRFP4310ZPbF HEXFET(R) Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free VDSS RDS(on) typ. max. ID (Silicon Limited) 100V 4.8m: 6.0m: 134A c ID (Package Limited) 120A D G D S TO-247AC G D S G ate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units A ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 134c ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) 95 ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 120 IDM Pulsed Drain Current d 560 PD @TC = 25C Maximum Power Dissipation 280 W Linear Derating Factor 1.9 VGS Gate-to-Source Voltage 20 W/C V dv/dt TJ Peak Diode Recovery f 18 Operating Junction and -55 to + 175 TSTG Storage Temperature Range V/ns C 300 Soldering Temperature, for 10 seconds (1.6mm from case) 10lbxin (1.1Nxm) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e IAR Avalanche Currentd EAR Repetitive Avalanche Energy g mJ 130 See Fig. 14, 15, 22a, 22b, A mJ Thermal Resistance Typ. Max. RJC Symbol Junction-to-Case j --- 0.54 RCS Case-to-Sink, Flat Greased Surface 0.24 --- RJA Junction-to-Ambient j --- 40 www.irf.com Parameter Units C/W 1 3/8/08 IRFP4310ZPbF Static @ TJ = 25C (unless otherwise specified) Symbol Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance RG Min. Typ. Max. Units 100 --- --- 2.0 --- --- --- --- --- --- 0.11 4.8 --- --- --- --- --- 0.7 --- --- 6.0 4.0 20 250 100 -100 --- Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 5mAd m VGS = 10V, ID = 75A g V VDS = VGS, ID = 150A A VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Parameter Min. Typ. Max. Units Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) 150 --- --- --- --- Turn-On Delay Time --- Rise Time --- Turn-Off Delay Time --- Fall Time --- Input Capacitance --- Output Capacitance --- Reverse Transfer Capacitance --- Effective Output Capacitance (Energy Related) --- Effective Output Capacitance (Time Related)h --- --- 120 29 35 85 20 60 55 57 6860 490 220 570 920 --- 170 --- --- --- --- --- --- --- --- --- --- --- S nC ns pF Conditions VDS = 50V, ID = 75A ID = 75A VDS =50V VGS = 10V g ID = 75A, VDS =0V, VGS = 10V VDD = 65V ID = 75A RG = 2.7 VGS = 10V g VGS = 0V VDS = 50V = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 0V to 80V i, See Fig. 11 VGS = 0V, VDS = 0V to 80V h Diode Characteristics Symbol Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr (Body Diode)d Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge IRRM ton Reverse Recovery Current Forward Turn-On Time Min. Typ. Max. Units --- --- --- 560 Conditions A MOSFET symbol A showing the integral reverse D G p-n junction diode. TJ = 25C, IS = 75A, VGS = 0V g TJ = 25C VR = 85V, IF = 75A TJ = 125C di/dt = 100A/s g TJ = 25C S --- --- 1.3 V --- 40 ns --- 49 --- 58 nC TJ = 125C --- 89 --- 2.5 --- A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.047mH RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above the Eas value and test conditions. ISD 75A, di/dt 600A/s, VDD V(BR)DSS, TJ 175C. 2 --- 134c Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90C www.irf.com IRFP4310ZPbF 1000 1000 VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V 100 BOTTOM 10 4.5V 60s PULSE WIDTH Tj = 25C 1 BOTTOM 100 4.5V 60s PULSE WIDTH Tj = 175C 10 0.1 1 10 100 0.1 VDS , Drain-to-Source Voltage (V) 10 100 Fig 2. Typical Output Characteristics 2.5 1000 100 10 TJ = 25C 1 VDS = 50V 60s PULSE WIDTH 0.1 3.0 4.0 5.0 6.0 VGS = 10V 2.0 (Normalized) TJ = 175C 2.0 ID = 75A RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current() 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 7.0 1.5 1.0 0.5 8.0 -60 -40 -20 VGS, Gate-to-Source Voltage (V) 12000 VGS, Gate-to-Source Voltage (V) Coss = Cds + Cgd 8000 Ciss 6000 4000 Coss 2000 Crss 10 100 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage www.irf.com ID= 75A VDS = 80V 16 VDS= 50V VDS= 20V 12 8 4 0 0 1 20 40 60 80 100 120 140 160 180 Fig 4. Normalized On-Resistance vs. Temperature 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 10000 0 TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics C, Capacitance (pF) VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 0 40 80 120 160 200 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 3 IRFP4310ZPbF 10000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 1000 TJ = 175C 100 TJ = 25C 10 1 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 1msec 100 10msec 10 1 Tc = 25C Tj = 175C Single Pulse VGS = 0V 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 2.0 LIMITED BY PACKAGE ID, Drain Current (A) 120 100 80 60 40 20 0 75 100 125 150 175 V(BR)DSS , Drain-to-Source Breakdown Voltage 140 50 10 100 Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 25 1 VDS , Drain-toSource Voltage (V) VSD, Source-to-Drain Voltage (V) 130 ID = 5mA 120 110 100 90 -60 -40 -20 TC, Case Temperature (C) 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage 3.0 EAS, Single Pulse Avalanche Energy (mJ) 600 2.5 2.0 Energy (J) DC 0.1 0.1 1.5 1.0 0.5 0.0 ID 11A 19A BOTTOM 75A TOP 500 400 300 200 100 0 0 20 40 60 80 VDS, Drain-to-Source Voltage (V) Fig 11. Typical COSS Stored Energy 4 100sec 100 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (C) Fig 12. Maximum Avalanche Energy Vs. DrainCurrent www.irf.com IRFP4310ZPbF Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 JJ 0.02 0.01 0.01 R11 R11 JJ 11 R22 R22 22 11 22 R33 R33 33 R44 R44 44 33 Ci= Ci= i/Ri i/Ri Ci Ci i/Ri i/Ri SINGLE PULSE ( THERMAL RESPONSE ) CC 44 Ri (C/W) 0.01688 0.018756 0.143482 0.159425 0.288653 0.320725 0.091153 0.101282 (sec) 0.000007 0.000373 0.000117 0.000734 0.001817 0.005665 0.011735 0.115865 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) Avalanche Current (A) Duty Cycle = Single Pulse 0.01 10 0.05 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs.Pulsewidth 140 120 EAR , Avalanche Energy (mJ) Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) TOP Single Pulse BOTTOM 1% Duty Cycle ID = 75A 100 80 60 40 20 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (C) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 15. Maximum Avalanche Energy vs. Temperature www.irf.com 5 IRFP4310ZPbF 24 ID = 1.0A ID = 1.0mA ID = 250A ID = 150A 4.0 3.5 20 16 IRRM - (A) VGS(th) Gate threshold Voltage (V) 4.5 3.0 2.5 12 8 2.0 IF = 30A VR = 85V 4 1.5 1.0 TJ = 125C TJ = 25C 0 -75 -50 -25 0 25 50 75 100 125 150 175 100 200 300 400 500 600 700 800 900 1000 dif / dt - (A / s) Fig 16. Threshold Voltage Vs. Temperature Fig. 17 - Typical Recovery Current vs. dif/dt 24 600 20 500 16 400 QRR - (nC) IRRM - (A) TJ , Temperature ( C ) 12 8 4 0 300 200 IF = 45A VR = 85V IF = 30A VR = 85V 100 TJ = 125C TJ = 25C TJ = 125C TJ = 25C 0 100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000 dif / dt - (A / s) dif / dt - (A / s) Fig. 18 - Typical Recovery Current vs. dif/dt Fig. 19 - Typical Stored Charge vs. dif/dt 600 500 QRR - (nC) 400 300 200 100 0 IF = 45A VR = 85V TJ = 125C TJ = 25C 100 200 300 400 500 600 700 800 900 1000 dif / dt - (A / s) 6 Fig. 20 - Typical Stored Charge vs. dif/dt www.irf.com IRFP4310ZPbF Driver Gate Drive D.U.T + - - * RG * * * * D.U.T. ISD Waveform + VDD ** P.W. Period *** Reverse Recovery Current dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D= VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - Period P.W. + + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple 5% * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel *** VGS = 5V for Logic Level Devices Fig 21. Diode Reverse Recovery Test Circuit for HEXFET(R) Power MOSFETs V(BR)DSS 15V D.U.T RG VGS 20V DRIVER L VDS tp + V - DD IAS tp A 0.01 I AS Fig 22a. Unclamped Inductive Test Circuit RD VDS Fig 22b. Unclamped Inductive Waveforms VDS 90% VGS D.U.T. RG + -VDD 10% VGS 10V Pulse Width 1 s Duty Factor 0.1 % td(on) Fig 23a. Switching Time Test Circuit td(off) tr tf Fig 23b. Switching Time Waveforms Id Vds Vgs L DUT 0 20K 1K VCC S Vgs(th) Qgodr Fig 24a. Gate Charge Test Circuit www.irf.com Qgd Qgs2 Qgs1 Fig 24b. Gate Charge Waveform 7 IRFP4310ZPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WIT H AS S EMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2001 IN T HE AS S EMBLY LINE "H" Note: "P" in ass embly line pos ition indicates "Lead-Free" INTERNATIONAL RECT IFIER LOGO PART NUMBER IRFPE30 56 135H 57 AS S EMBLY LOT CODE DAT E CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. 8 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 3/08 www.irf.com