Semiconductor Components Industries, LLC, 2010
June, 2010 -- Rev. 10
1Publication Order Number:
MC33171/D
MC33171, 2, 4,
NCV33172, 4
Single Supply 3.0 V to 44 V,
Low Power Operational
Amplifiers
Quality bipolar fabrication with innovative design concepts are
employed for the MC33171/72/74, NCV33172/74 series of
monolithic operational amplifiers. These devices operate at 180 mA
per amplifier and offer 1.8 MHz of gain bandwidth product and 2.1
V/ms slew rate without the use of JFET device technology. Although
this series can be operated from split supplies, it is particularly suited
for single supply operation, since the common mode input voltage
includes ground potential (VEE). With a Darlington input stage, these
devices exhibit high input resistance, low input offset voltage and high
gain. The all NPN output stage, characterized by no deadband
crossover distortion and large output voltage swing, provides high
capacitance drive capability, excellent phase and gain margins, low
open loop high frequency output impedance and symmetrical
source/sink AC frequency response.
The MC33171/72/74, NCV33172/74 are specified over the
industrial/automotive temperature ranges. The complete series of
single, dual and quad operational amplifiers are available in plastic as
well as the surface mount packages.
Features
Low Supply Current: 180 mA (Per Amplifier)
Wide Supply Operating Range: 3.0 V to 44 V or 1.5 V to 22 V
Wide Input Common Mode Range, Including Ground (VEE)
Wide Bandwidth: 1.8 MHz
High Slew Rate: 2.1 V/ms
Low Input Offset Voltage: 2.0 mV
Large Output Voltage Swing: --14.2 V to +14.2 V
(with 15 V Supplies)
Large Capacitance Drive Capability: 0 pF to 500 pF
Low Total Harmonic Distortion: 0.03%
Excellent Phase Margin: 60
Excellent Gain Margin: 15 dB
Output Short Circuit Protection
ESD Diodes Provide Input Protection for Dual and Quad
Pb--Free Packages are Available
NCV Prefix for Automotive and Other Applications Requiring Site
and Control Changes
PDIP--8
P SUFFIX
CASE 626
SO--8
D, VD SUFFIX
CASE 751
1
8
PDIP--14
P, VP SUFFIX
CASE 646
1
14
SO--14
D, VD SUFFIX
CASE 751A
1
14
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
ORDERING INFORMATION
TSSOP--14
DTB SUFFIX
CASE 948G
See general marking information in the device marking
section on page 10 of this data sheet.
DEVICE MARKING INFORMATION
1
14
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1
8
MC33171, 2, 4, NCV33172, 4
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2
SINGLE
7
6
5
(Single, Top View)
(Top View)
Offset Null 1
2
3
4
8
7
6
5
Noninv. Input
VEE
NC
VCC
Output
Offset Null
Inv. Input
VEE
Inputs 1
Inputs 2
Output 2
Output 1 VCC
1
2
3
4
8
+
--
+
--
--
+
2
1
QUAD
Inputs 1
Output 1
VCC
Inputs 2
Output 2
Output 4
Inputs 4
VEE
Inputs 3
Output 3
(Top View)
1
2
3
4
5
6
78
9
10
11
12
13
14
4
23
1
--
+
--
+
+
--
+
--
PIN CONNECTIONS
DUAL
Q1
Q3 Q4 Q5 Q6 Q7
VCC
Q2
R1 C1 R2
Q9 Q10
Q8
--
+
Inputs
Q11
Q17
D2
R6 R7
Q18
C2 D3
R8
Output
Q19
Q16Q15
Q14
Q13
Q12
D1
R3 R4
R5
Current
Limit
VEE/GND
Offset Null
(MC33171)
Bias
Figure 1. Representative Schematic Diagram
(Each Amplifier)
MC33171, 2, 4, NCV33172, 4
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3
MAXIMUM RATINGS
Rating Symbol Value Unit
Supply Voltage VCC/VEE 22 V
Input Differential Voltage Range VIDR (Note 1) V
Input Voltage Range VIR (Note 1) V
Output Short Circuit Duration (Note 2) tSC Indefinite sec
Operating Ambient Temperature Range TA(Note 3) C
Operating Junction Temperature TJ+150 C
Storage Temperature Range Tstg --65 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
DC ELECTRICAL CHARACTERISTICS (VCC =+15V,V
EE =--15V,R
Lconnected to ground, TA=+25C, unless otherwise noted.)
Characteristics Symbol Min Typ Max Unit
Input Offset Voltage (VCM =0V)
VCC =+15V,V
EE =--15V,T
A=+25C
VCC =+5.0V,V
EE =0V,T
A=+25C
VCC =+15V,V
EE =--15V,T
A=T
low to Thigh (Note 3)
VIO
--
--
--
2.0
2.5
--
4.5
5.0
6.5
mV
Average Temperature Coefficient of Offset Voltage ΔVIO/ΔT-- 10 -- mV/C
Input Bias Current (VCM =0V)
TA=+25C
TA=T
low to Thigh (Note 3)
IIB
--
--
20
--
100
200
nA
Input Offset Current (VCM =0V)
TA=+25C
TA=T
low to Thigh (Note 3)
IIO
--
--
5.0
--
20
40
nA
Large Signal Voltage Gain (VO=10 V, RL=10k)
TA=+25C
TA=T
low to Thigh (Note 3)
AVOL
50
25
500
--
--
--
V/mV
Output Voltage Swing
VCC =+5.0V,V
EE =0V,R
L=10k,T
A=+25C
VCC =+15V,V
EE =--15V,R
L=10k,T
A=+25C
VCC =+15V,V
EE =--15V,R
L=10k,T
A=T
low to Thigh (Note 3)
VOH
3.5
13.6
13.3
4.3
14.2
--
--
--
--
V
VCC =+5.0V,V
EE =0V,R
L=10k,T
A=+25C
VCC =+15V,V
EE =--15V,R
L=10k,T
A=+25C
VCC =+15V,V
EE =--15V,R
L=10k,T
A=T
low to Thigh (Note 3)
VOL --
--
--
0.05
--14.2
--
0.15
--13.6
--13.3
Output Short Circuit (TA=+25C)
Input Overdrive = 1.0 V, Output to Ground
Source
Sink
ISC
3.0
15
5.0
27
--
--
mA
Input Common Mode Voltage Range
TA=+25C
TA=T
low to Thigh (Note 3)
VICR
VEE to (VCC --1.8)
VEE to (VCC --2.2)
V
Common Mode Rejection Ratio (RS10 k), TA=+25CCMRR 80 90 -- dB
Power Supply Rejection Ratio (RS= 100 Ω), TA=+25CPSRR 80 100 -- dB
Power Supply Current (Per Amplifier)
VCC =+5.0V,V
EE =0V,T
A=+25C
VCC =+15V,V
EE =--15V,T
A=+25C
VCC =+15V,V
EE =--15V,T
A=T
low to Thigh (Note 3)
ID
--
--
--
180
220
--
250
250
300
mA
1. Either or both input voltages must not exceed the magnitude of VCC or VEE.
2. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded.
3. MC3317x Tlow =--40CT
high =+85C
MC3317xV, NCV3317x Tlow =--40CT
high = +125C
MC33171, 2, 4, NCV33172, 4
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4
AC ELECTRICAL CHARACTERISTICS (VCC =+15V,V
EE =--15V,R
Lconnected to ground, TA=+25C, unless otherwise noted.)
Characteristics Symbol Min Typ Max Unit
Slew Rate (Vin =--10Vto+10V,R
L=10k,C
L= 100 pF)
AV+1
AV-- 1
SR
1.6
--
2.1
2.1
--
--
V/ms
Gain Bandwidth Product (f = 100 kHz) GBW 1.4 1.8 -- MHz
Power Bandwidth
AV=+1.0R
L=10k,V
O=20V
pp,THD=5%
BWp
-- 35 --
kHz
Phase Margin
RL=10k
RL=10k,C
L= 100 pF
φm
--
--
60
45
--
--
Deg
Gain Margin
RL=10k
RL=10k,C
L= 100 pF
Am
--
--
15
5.0
--
--
dB
Equivalent Input Noise Voltage
RS= 100 Ω,f=1.0kHz
en-- 32 -- nV
/
Hz
Equivalent Input Noise Current (f = 1.0 kHz) In-- 0.2 -- pA/ Hz
Differential Input Resistance
Vcm =0V
Rin
-- 300 --
MΩ
Input Capacitance Cin -- 0.8 -- pF
Total Harmonic Distortion
AV= +10, RL=10k,2.0V
pp VO20 Vpp,f=10kHz
THD
-- 0.03 --
%
Channel Separation (f = 10 kHz) CS -- 120 -- dB
Open Loop Output Impedance (f = 1.0 MHz) zo-- 100 -- Ω
Figure 2. Input Common Mode Voltage Range
versus Temperature
Figure 3. Split Supply Output Saturation
versus Load Current
V,INPUT
CO
MM
O
NM
O
DE V
O
LTA
G
ERAN
G
E(V)
ICR
TA, AMBIENT TEMPERATURE (C)
VCC
VCC/VEE =1.5 V to 22 V
ΔVIO =5.0mV
V , OUTPUT SATURATION VOLTAGE (V)
sat
IL, LOAD CURRENT (mA)
Source
Sink
VEE
VCC
VEE
VCC/VEE =5.0 V to 22 V
TA=25C
0
-- 2 . 4
0.1
0
-- 0 . 8
-- 1 . 6
0
-- 1 . 0
1.0
0
--55 --25 0 25 50 75 100 125 0 1.0 2.0 3.0 4.0
MC33171, 2, 4, NCV33172, 4
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5
1. TA=--55C
2. TA=25C
3. TA= 125C
Dual
Quad
1
2
3
Single
3
2
1
1
2
3
VCC/VEE =15 V
AV=+1.0
RL=10k
CL= 100 pF
TA=25C
AV= 1000
AV= 100
AV=10 A
V=1.0
Figure 4. Open Loop Voltage Gain and
Phase versus Frequency
Figure 5. Phase Margin and Percent
Overshoot versus Load Capacitance
Figure 6. Normalized Gain Bandwidth Product
and Slew Rate versus Temperature
Figure 7. Small and Large Signal
Transient Response
Figure 8. Output Impedance and Frequency Figure 9. Supply Current versus Supply Voltage
0
0
5.0 ms/DIV
50 mV/DIV10 V/DIV
5.0 ms/DIV
f, FREQUENCY (Hz)
, EXCESS PAHSE (DEGREES)
1
2
3
4
120
140
160
180
200
220
, OPEN LOOP VOLTAGE GAIN (dB)
VOL
Gain
Margin
=15dB
Phase
Margin
=58
VCC/VEE =15 V
RL=10k
Vout =0V
TA=25C
1 -- Phase
2 -- Phase, CL= 100 pF
3--Gain
4 -- Gain, CL= 100 pF
m, PHASE MARGIN (DEGREES)
CL, LOAD CAPACITANCE (pF)
70
60
50
40
30
20
10
%, PERCENT OVERSHOOT
%
φm
0
VCC/VEE =15 V
AVOL =+1.0
RL=10k
ΔVO=20mV
pp
TA=25C
TA, AMBIENT TEMPERATURE (C)
GBW AND SR (NORMALIZED)
GBW
SR
VCC/VEE =15 V
RL=10k
f, FREQUENCY (Hz)
z , OUTPUT IMPEDANCE ( )
o
VCC/VEE, SUPPLY VOLTAGE (V)
D
I , I , POWER SUPPLY CURRENT (mA)
CC
A
3
0
20
10
0
-- 1 0
-- 2 0
-- 3 0
70
60
50
40
30
20
10
0
1.3
1.2
1.1
1.0
0.9
0.8
0.7
140
120
100
80
60
40
20
0
1.1
0.9
0.7
0.5
0.3
0.1
100 k 1.0 M 10 M 10 20 50 100 200 500 1.0 k
--55 --25 0 25 50 75 100 125
200 2.0 k 20 k 200 k 2.0 M 0 5.0 10 15 20 25
VCC/VEE =15 V
VCM =0V
VO=0V
ΔIO=0.5 mA
TA=25C
MC33171, 2, 4, NCV33172, 4
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6
APPLICATIONS INFORMATION -- CIRCUIT DESCRIPTION/PERFORMANCE FEATURES
Although the bandwidth, slew rate, and settling time of the
MC33171/72/74 amplifier family is similar to low power op
amp products utilizing JFET input devices, these amplifiers
offer additional advantages as a result of the PNP transistor
differential inputs and an all NPN transistor output stage.
Because the input common mode voltage range of this
input stage includes the VEE potential, single supply
operation is feasible to as low as 3.0 V with the common
mode input voltage at ground potential.
The input stage also allows differential input voltages up
to 44 V, provided the maximum input voltage range is not
exceeded. Specifically, the input voltages must range
between VCC and VEE supply voltages as shown by the
maximum rating table. In practice, although not
recommended, the input voltages can exceed the VCC
voltage by approximately 3.0 V and decrease below the VEE
voltage by 0.3 V without causing product damage, although
output phase reversal may occur. It is also possible to source
up to 5.0 mA of current from VEE through either inputs’
clamping diode without damage or latching, but phase
reversal may again occur. If at least one input is within the
common mode input voltage range and the other input is
within the maximum input voltage range, no phase reversal
will occur. If both inputs exceed the upper common mode
input voltage limit, the output will be forced to its lowest
voltage state.
Since the input capacitance associated with the small
geometry input device is substantially lower (0.8 pF) than
that of a typical JFET (3.0 pF), the frequency response for
a given input source resistance is greatly enhanced. This
becomes evident in D--to--A current to voltage conversion
applications where the feedback resistance can form a pole
with the input capacitance of the op amp. This input pole
creates a 2nd Order system with the single pole op amp and
is therefore detrimental to its settling time. In this context,
lower input capacitance is desirable especially for higher
values of feedback resistances (lower current DACs). This
input pole can be compensated for by creating a feedback
zero with a capacitance across the feedback resistance, if
necessary, to reduce overshoot. For 10 kΩof feedback
resistance, the MC33171/72/74 family can typically settle to
within 1/2 LSB of 8 bits in 4.2 ms, and within 1/2 LSB of 12
bits in 4.8 ms for a 10 V step. In a standard inverting unity
gain fast settling configuration, the symmetrical slew rate is
typically 2.1 V/ms. In the classic noninverting unity gain
configuration the typical output positive slew rate is also
2.1 V/ms, and the corresponding negative slew rate will
usually exceed the positive slew rate as a function of the fall
time of the input waveform.
The all NPN output stage, shown in its basic form on the
equivalent circuit schematic, offers unique advantages over
the more conventional NPN/PNP transistor Class AB output
stage. A 10 kΩload resistance can typically swing within
0.8 V of the positive rail (VCC) and negative rail (VEE),
providing a 28.4 Vpp swing from 15 V supplies. This large
output swing becomes most noticeable at lower supply
voltages.
The positive swing is limited by the saturation voltage of
the current source transistor Q7, the VBE of the NPN pull--up
transistor Q17, and the voltage drop associated with the
short circuit resistance, R5. For sink currents less than
0.4 mA, the negative swing is limited by the saturation
voltage of the pull--down transistor Q15, and the voltage
drop across R4 and R5. For small valued sink currents, the
above voltage drops are negligible, allowing the negative
swing voltage to approach within millivolts of VEE. For sink
currents (> 0.4 mA), diode D3 clamps the voltage across R4.
Thus the negative swing is limited by the saturation voltage
of Q15, plus the forward diode drop of D3 (VEE +1.0 V).
Therefore an unprecedented peak--to--peak output voltage
swing is possible for a given supply voltage as indicated by
the output swing specifications.
If the load resistance is referenced to VCC instead of
ground for single supply applications, the maximum
possible output swing can be achieved for a given supply
voltage. For light load currents, the load resistance will pull
the output to VCC during the positive swing and the output
will pull the load resistance near ground during the negative
swing. The load resistance value should be much less than
that of the feedback resistance to maximize pull--up
capability.
Because the PNP output emitter--follower transistor has
been eliminated, the MC33171/72/74 family offers a 15 mA
minimum current sink capability, typically to an output
voltage of (VEE +1.8 V). In single supply applications the
output can directly source or sink base current from a
common emitter NPN transistor for current switching
applications.
In addition, the all NPN transistor output stage is
inherently faster than PNP types, contributing to the bipolar
amplifiers improved gain bandwidth product. The
associated high frequency low output impedance (200 Ωtyp
@ 1.0 MHz) allows capacitive drive capability from 0 pF to
400 pF without oscillation in the noninverting unity gain
configuration. The 60phase margin and 15 dB gain margin,
as well as the general gain and phase characteristics, are
virtually independent of the source/sink output swing
conditions. This allows easier system phase compensation,
since output swing will not be a phase consideration. The
AC characteristics of the MC33171/72/74 family also allow
excellent active filter capability, especially for low voltage
single supply applications.
Although the single supply specification is defined at
5.0 V, these amplifiers are functional to at least 3.0 V @
25C. However slight changes in parametrics such as
bandwidth, slew rate, and DC gain may occur.
MC33171, 2, 4, NCV33172, 4
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7
If power to this integrated circuit is applied in reverse
polarity, or if the IC is installed backwards in a socket, large
unlimited current surges will occur through the device that
may result in device destruction.
As usual with most high frequency amplifiers, proper lead
dress, component placement and PC board layout should be
exercised for optimum frequency performance. For
example, long unshielded input or output leads may result in
unwanted input/output coupling. In order to preserve the
relatively low input capacitance associated with these
amplifiers, resistors connected to the inputs should be
immediately adjacent to the input pin to minimize additional
stray input capacitance. This not only minimizes the input
pole for optimum frequency response, but also minimizes
extraneous “pick up” at this node. Supply decoupling with
adequate capacitance immediately adjacent to the supply pin
is also important, particularly over temperature, since many
types of decoupling capacitors exhibit great impedance
changes over temperature.
The output of any one amplifier is current limited and thus
protected from a direct short to ground. However, under
such conditions, it is important not to allow the device to
exceed the maximum junction temperature rating. Typically
for 15 V supplies, any one output can be shorted
continuously to ground without exceeding the maximum
temperature rating.
MC33171, 2, 4, NCV33172, 4
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8
Figure 10. AC Coupled Noninverting Amplifier
with Single +5.0 V Supply
Figure 11. AC Coupled Inverting Amplifier
with Single +5.0 V Supply
Figure 12. DC Coupled Inverting Amplifier
Maximum Output Swing with Single
+5.0 V Supply
Figure 13. Offset Nulling
Circuit
Figure 14. Active High--Q Notch
Filter
Figure 15. Active Bandpass
Filter
2.2 k 510 k
VCC
100 k
Cin
Vin
1.0 k
+
--
CO
VO
3.6 Vpp
AV= 101
BW ( --3.0 dB) = 20 kHz
VO0
100 k 100 k
V
CC
100 k CO
VO
+
--
10 k
Cin
Vin
AV=10
BW ( --3.0 dB) = 200 kHz
10 k
100 k
100 k VCC
50 k
RL
4.7 k +
--
100 k 1.0 M
VO
Vin
4.2 Vpp
VO2.5 V
AV=10
BW ( --3.0 dB) = 200 kHz
VCC
7
3
6
25
1
410 k
VEE
+
--
Offset Nulling range is approximately 80 mV with
a 10 k potentiometer, MC33171 only.
Vin
--
+VO
0.01
2C
0.02 2R
32 k
fo=1.0kHz
fo=1
4pRC
Vin 0.2 Vdc
2C
0.02
16 k16 k
Vin
R1
1.1 k
R2
5.6 k
R3
2.2 k
--
+
VO
C
0.047
0.4
VCC
fo=30kHz
Q=10
HO=1.0
R1 = R3
2H
O
R2 =
R3 = Q
πfoC
R1 R3
4Q2R1 --R3
Qofo
GBW <0.1
Given fo= center frequency
Ao= Gain at center frequency
Choose Value fo,Q,A
o,C
For less than 10% error for operational amplifier, where foand GBW are expressed in Hz.
C
0.047
RL
100 kRL
R
C
R
VCC Then:
3.8 Vpp
VO0
MC33171, 2, 4, NCV33172, 4
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9
ORDERING INFORMATION
Op Amp
Function Device
Operating
Temperature Range Package Shipping
Single
MC33171D
TA=--40to +85C
SO--8
98 Units/Rail
MC33171DG SO--8
(Pb--Free)
MC33171DR2 SO--8
2500 / Tape & Reel
MC33171DR2G SO--8
(Pb--Free)
MC33171P Plastic DIP
50 Units/Rail
MC33171PG Plastic DIP
(Pb--Free)
Dual
MC33172D
TA=--40to +85C
SO--8
98 Units/Rail
MC33172DG SO--8
(Pb--Free)
MC33172DR2 SO--8
2500 / Tape & Reel
MC33172DR2G SO--8
(Pb--Free)
MC33172P Plastic DIP
50 Units/Rail
MC33172PG Plastic DIP
(Pb--Free)
MC33172VD
TA=--40to +125C
SO--8
98 Units/Rail
MC33172VDG SO--8
(Pb--Free)
MC33172VDR2 SO--8 2500 / Tape & Reel
MC33172VDR2G SO--8
(Pb--Free)
NCV33172DR2** SO--8 2500 / Tape & Reel
Quad
MC33174D
TA=--40to +85C
SO--14
55 Units/Rail
MC33174DG SO--14
(Pb--Free)
MC33174DR2 SO--14
2500 / Tape & Reel
MC33174DR2G SO--14
(Pb--Free)
MC33174DTB TSSOP--14* 96 Units/Rail
MC33174DTBG TSSOP--14*
MC33174DTBR2 TSSOP--14* 2500 / Tape & Reel
MC33174DTBR2G TSSOP--14*
MC33174P Plastic DIP
25 Units/Rail
MC33174PG Plastic DIP
(Pb--Free)
MC33174VDR2
TA=--40to +125C
SO--14
2500 / Tape & Reel
MC33174VDR2G SO--14
(Pb--Free)
MC33174VP Plastic DIP
25 Units/Rail
MC33174VPG Plastic DIP
(Pb--Free)
NCV33174DTBR2G TSSOP--14 2500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb--Free.
**NCV prefix for automotive and other applications requiring site and control changes.
MC33171, 2, 4, NCV33172, 4
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10
MARKING DIAGRAMS
PDIP--8
P SUFFIX
CASE 626
1
8
x=1or2
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
Gor G= Pb--Free Package
SO--8
D SUFFIX
CASE 751
SO--8
MC33172VD
NCV33172D
CASE 751
PDIP--14
P SUFFIX
CASE 646
1
14
MC33174P
AWLYYWWG
PDIP--14
VP SUFFIX
CASE 646
SO--14
D SUFFIX
CASE 751A
MC33174DG
AWLYWW
SO--14
VD SUFFIX
CASE 751A
TSSOP--14
DTB SUFFIX
CASE 948G
MC3317xP
AWL
YYWWG
1
14
1
14
3317x
ALYW
G
1
8
1
8
MC33
174
ALYW G
G
3317V
ALYW
G
MC33174VP
AWLYYWWG
MC33174VDG
AWLYWW
(Note: Microdot may be in either location)
1
14
1
14
MC33171, 2, 4, NCV33172, 4
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11
PACKAGE DIMENSIONS
8LEADPDIP
CASE 626--05
ISSUE M
14
58
F
NOTE 5
D
e
b
L
A1
A
E3
E
A
TOP VIEW
CSEATING
PLANE
0.010 CA
SIDE VIEW
END VIEW
END VIEW
NOTE 3
DIM MIN NOM MAX
INCHES
A-- -- -- -- -- -- -- -- 0 . 2 1 0
A1 0 . 0 1 5 -- -- -- -- -- -- -- --
b0.014 0.018 0.022
C0.008 0.010 0.014
D0.355 0.365 0.400
D1 0 . 0 0 5 -- -- -- -- -- -- -- --
e0.100 BSC
E0.300 0.310 0.325
L0.115 0.130 0.150
-- -- -- -- -- -- -- -- 5 . 3 3
0 . 3 8 -- -- -- -- -- -- -- --
0.35 0.46 0.56
0.20 0.25 0.36
9.02 9.27 10.02
0 . 1 3 -- -- -- -- -- -- -- --
2.54 BSC
7.62 7.87 8.26
2.92 3.30 3.81
MIN NOM MAX
MILLIMETERS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION E IS MEASURED WITH THE LEADS
RESTRAINED PARALLEL AT WIDTH E2.
4. DIMENSION E1 DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
E1 0.240 0.250 0.280 6.10 6.35 7.11
E2
E3 -- -- -- -- -- -- -- -- 0 . 4 3 0 -- -- -- -- -- -- -- -- 1 0 . 9 2
0.300 BSC 7.62 BSC
E1
D1
M
8X
e/2
E2
c
MC33171, 2, 4, NCV33172, 4
http://onsemi.com
12
PACKAGE DIMENSIONS
SOIC--8 NB
CASE 751--07
ISSUE AJ
SEATING
PLANE
1
4
58
N
J
X45
_
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751--01 THRU 751--06 ARE OBSOLETE. NEW
STANDARD IS 751--07.
A
BS
D
H
C
0.10 (0.004)
DIM
A
MIN MAX MIN MAX
INCHES
4.80 5.00 0.189 0.197
MILLIMETERS
B3.80 4.00 0.150 0.157
C1.35 1.75 0.053 0.069
D0.33 0.51 0.013 0.020
G1.27 BSC 0.050 BSC
H0.10 0.25 0.004 0.010
J0.19 0.25 0.007 0.010
K0.40 1.27 0.016 0.050
M0808
N0.25 0.50 0.010 0.020
S5.80 6.20 0.228 0.244
-- X --
-- Y --
G
M
Y
M
0.25 (0.010)
-- Z --
Y
M
0.25 (0.010) ZSXS
M
____
1.52
0.060
7.0
0.275
0.6
0.024
1.270
0.050
4.0
0.155
mm
inches
SCALE 6:1
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
MC33171, 2, 4, NCV33172, 4
http://onsemi.com
13
PACKAGE DIMENSIONS
PDIP--14
CASE 646--06
ISSUE P
17
14 8
B
ADIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.715 0.770 18.16 19.56
B0.240 0.260 6.10 6.60
C0.145 0.185 3.69 4.69
D0.015 0.021 0.38 0.53
F0.040 0.070 1.02 1.78
G0.100 BSC 2.54 BSC
H0.052 0.095 1.32 2.41
J0.008 0.015 0.20 0.38
K0.115 0.135 2.92 3.43
L
M-- -- -- 1 0 -- -- -- 1 0
N0.015 0.039 0.38 1.01
__
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
F
HG D
K
C
SEATING
PLANE
N
-- T --
14 PL
M
0.13 (0.005)
L
M
J
0.290 0.310 7.37 7.87
MC33171, 2, 4, NCV33172, 4
http://onsemi.com
14
PACKAGE DIMENSIONS
SOIC--14
CASE 751A--03
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.127
(0.005) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
-- A --
-- B --
G
P7PL
14 8
7
1
M
0.25 (0.010) B M
S
B
M
0.25 (0.010) A S
T
-- T --
F
RX45
SEATING
PLANE D14 PL K
C
J
M
_DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A8.55 8.75 0.337 0.344
B3.80 4.00 0.150 0.157
C1.35 1.75 0.054 0.068
D0.35 0.49 0.014 0.019
F0.40 1.25 0.016 0.049
G1.27 BSC 0.050 BSC
J0.19 0.25 0.008 0.009
K0.10 0.25 0.004 0.009
M0707
P5.80 6.20 0.228 0.244
R0.25 0.50 0.010 0.019
__ __
7.04
14X
0.58
14X
1.52
1.27
DIMENSIONS: MILLIMETERS
1
PITCH
SOLDERING FOOTPRINT
7X
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
MC33171, 2, 4, NCV33172, 4
http://onsemi.com
15
PACKAGE DIMENSIONS
TSSOP--14
CASE 948G--01
ISSUE B
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A4.90 5.10 0.193 0.200
B4.30 4.50 0.169 0.177
C-- -- -- 1 . 2 0 -- -- -- 0 . 0 4 7
D0.05 0.15 0.002 0.006
F0.50 0.75 0.020 0.030
G0.65 BSC 0.026 BSC
H0.50 0.60 0.020 0.024
J0.09 0.20 0.004 0.008
J1 0.09 0.16 0.004 0.006
K0.19 0.30 0.007 0.012
K1 0.19 0.25 0.007 0.010
L6.40 BSC 0.252 BSC
M0808
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE --W--.
____
S
U0.15 (0.006) T
2X L/2
S
U
M
0.10 (0.004) V S
T
L-- U --
SEATING
PLANE
0.10 (0.004)
-- T --
SECTION N--N
DETAIL E
JJ1
K
K1
DETAIL E
F
M
-- W --
0.25 (0.010)
8
14
7
1
PIN 1
IDENT.
H
G
A
D
C
B
S
U0.15 (0.006) T
-- V --
14X REFK
N
N
7.06
14X
0.36 14X
1.26
0.65
DIMENSIONS: MILLIMETERS
1
PITCH
SOLDERING FOOTPRINT*
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
MC33171, 2, 4, NCV33172, 4
http://onsemi.com
16
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