2N4957UB Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: * General purpose * VHF-UHF amplifier transistor * PNP silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N4957UBJ) * JANTX level (2N4957UBJX) * JANTXV level (2N4957UBJV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV * Radiation testing (total dose) upon request Features * * * * Hermetically sealed TO-72 metal can Also available in chip configuration Chip geometry 0006 Reference document: MIL-PRF-19500/426 Benefits * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 30 Collector-Base Voltage VCBO 30 Unit Volts Volts Emitter-Base Voltage VEBO 3 Volts Collector Current, Continuous IC 30 mA Power Dissipation, TA = 25C Derate linearly above 25C PT 200 1.14 Operating Junction Temperature TJ -65 to +200 mW mW/C C TSTG -65 to +200 C Storage Temperature Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N4957UB Silicon PNP Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage V(BR)CEO Test Conditions Min IC = 1 mA Typ Max Units Volts nA A A A 30 Collector-Base Cutoff Current ICBO1 ICBO2 ICBO3 VCB = 20 Volts VCB = 30 Volts VCB = 20 Volts, TA = 150C 100 100 100 Emitter-Base Cutoff Current IEBO1 VEB = 3 Volts 100 On Characteristics Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Parameter DC Current Gain Symbol hFE1 hFE2 hFE3 hFE4 Test Conditions IC = 0.5 mA, VCE = 10 Volts IC = 2 mA, VCE = 10 Volts IC = 5 mA, VCE = 10 Volts IC = 5 mA, VCE = 10 Volts TA = -55C Min 15 20 30 10 Typ Symbol Test Conditions VCE = 10 Volts, IC = 2 mA, f = 100 MHz IC = 2 mA, VCE = 10 Volts, f = 450 MHz VCE = 10 Volts, IC = 2 mA, f = 450 MHz, RL = 50 VCB = 10 Volts, IE = 2 mA, f = 63.6 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz Min Typ Max Units 165 Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Common-Emitter small signal power gain Noise Figure GPE NF Collector Base time constant Collector Base feedback capacitance Copyright 2002 Rev. D |hFE| rb'CC Ccb Max Units 12 36 17 25 dB 3.5 dB 8 ps 0.8 pF 1 Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2