i" IN ORDER OF (1) MAX RISE TIME, (2) fab & 12. SWITCHING TRANSISTORS {3) TYPE No. 13] [2 | [1 JMAX MAX MAX MAX |]MAX. Pc BIAS DWG # TYPE RISE DELAY| STORE| FALL {IN FREE MAX, Cob rbb |STRUCTURE|MjMAX. |200 No. fab TIME TIME TIME TIME AIR @ Vcb le hFE SAT. xX P-PNP A|TEMP| s/a (Hz) 1 8 tf 25 RES. Cob |N-NPN T T0200 z, S. Ss s) (s) (W) (V) (A) (Q) (Fy (s) C) __|Ser. 2907 T5OMSA{__40n TOn | 8On 30n [200m TO Dl[Ts0mZ300 #7 Opa PB SI Woke TOTOG EN3502 150MS8A| 40nd 100nd 300m 10 D]150mZ] 100 #A 8.0pa Pp Si |1254 |TO106 __|EN3504 ____ | 150MSA| 40nd 100nd 200m 10 B1150mZ] 100 #A __ |8. 0p | IP Si_1125J [TO105 KS6119 150M 40n 35n {740n 60n 5.0 5.0 15 A 90p N-PE Si [2005 |TO3 ~ TPS112 150M 40n 10n 80n 70n |360m 10 D1150mg] 100 A 8.0p P Si TO92 25C318A 170M 40n 20n 80On 20n__|300m 3.0D |1.0mG| 90 * |6.0 3.0p 80p_|N Si |175y |TO18 2SC352A 1T70MS 40n 20n 8On 20n [750m 3.00 |[1.0mS] 70 * |6.0 3.0p 80p [N Si ]1755|TO5 2SC353A 170M5 40n 20n 80n 20n = |750m 3.0 @ l1.QmZ| 70 * 6.0 3.0p 80p |N Si \1755 |TO5 2SC46 . 180M 40n 800n_ [600n___|600m 6.0 2 1.0m% | 50 6.0 15p 35nt_[N-ME Si |1504 |TO5 2N706A 200MSA| 40n@ 25n 75n@ [300m 1.0 10mg] 60 4 60 5.0pa | N Tsi i 2N706C 200MSA| 40nd | 25ns 75nZ |360 1.0 | 10mg) 20 4 40 5.0pia N Si {2N753 200M8A| 40nd 75nZ_|1.0 10% | 10m@l120 60m |[5.0pa | IN Si 2N849 2OOMEA; 40nD 25nD | 75nH [300m TOD | TOmd 60 #0 5.0pia ND TSi [2008 |W5a 2N850 200M5A| 40n@ 35nD | 75nG |300m 10D | 10mg)120 #24 5.0pa N Si |200S |W5a 2N2205 200M8A| 40nd 25n 75nZ_|300m 1.0% | 10mg} 20 A 22 6.0p4 f IN Si |200A|TO18 2N2206 200MSA| 40nm 35n 75n@ [300m TOD | 10mg 40 4 22 [8.000 N Si [200A /TO46 2N2904 200MSA| 40n 10n &On 30n |600m 10 D\.10m~ | 20 A 8.0pi4 P Si |200S jTO5 2N2904A_ 200M8A|_ 40n 10n &On 30n |600m 10 Z/.10mH] 404 | | 8.0pd | {P |Si 200s |TO5 2N2905 2O0OMSA| 400 TOn @0n 30n |600m 10 D/.10mG[ 35 A 8.0pit P Si |200S|TO5 2N2905A 2O00M8A| 40n 10n On 30n [600m 10 D/.10mB| 75 A 8.0pld P Si |200S |TO5 2N2906 2OOM8A|__40n 10n 80On 30n__|400m 10 D|.10mS| 20 4 8.0p7 | IP Si_|200S |T018 IN2906A 200MSA;40n 10n 80n 30n {400m TO S/.10mo] 40a 8.0pi Po Si 7200S |T018 2N2907 200M8A| 40n 10n 80n 30n {400m 10 B|.10mG] 35 A .0p4 P si |200S|TO18 2N2907A____ 200MSA|_ _40n 10n 80On 30n__|400m 10 @/.10mG] 75 A | 8.0p4 |P. $i |200$|TO18 2N2955 ZOOM8A] 40n Tbr 40n 40n 750m TO @ | 50mg) 60 20 4.0p! P Ge ]100S [TO 18 2N3485 200M8 40n 10n 80On 30n (204 10 G|100uG| 20 A {3.2 8.0p P-EA Si |200S |TO046 2N3485A 200M8 40n 10n 8On 30n |2.0 Z 10 Z{100uS| 40 A 13.2 8.0pi _{P-EA Si_|200S|TO46 2N3486 200M5 40n 10n 80n 30n [2.0 TO @|100us| 35 A 3.2 8.0p P-EA Si 1200S [TO46 2N3486A 200M5 40n 10n 80n 30n |20@ 10 D}100ug| 75 A 3.2 8.0pa P-EA Si |200S |TO46 2N3671 2OOM8A|__40n 10n 80n 30n {600m 10 Z| 10m 75 A 9.0p { [Po Si_ [2008 |TO5 IN3672 QOOMSA| 40n 1On 80n 30n )400m 10 SF 10mA 75 A 9.0pla Po Si ]2005|1T018 2N3673 200M8A| 40n 10n 80n 30n [350m 10 D| 10m] 75 A 9.0p4 P Si |200S |TO46 2N3838 2ZO00MSA|__40n. 10n__{250n 90n {350m 10 D11.0m% | 50 A . 8.0pH | _ Si |200S |TO89 2N4142 200M5 40n TOn 80n 30n {300m 10 {150m 120 Zi 3.2 8.0pi YP Si [1254 [R110 2N4143 200M8 40n 10n 80n 30n 300m 10 |150mZi300 A 3.2 8.0pZ P Si }1255 |R110 2N4228 200M8A|__40n 10n 80n 30n [300m 10 Z/150m@ji50 7 (3.2 |8.0pi_ {TP Si_ [1255 [R110 2N4854 200MSA|__40n 20n [280n 70n |600m 10 D/T.Om 50 A B8psia| oe Si }200S |TO78 2N4855 200M8A| 40n 20n = |280n 70n {600m 10 D[1.0m 25 A 8ps fp Si |200S|T078 2N4970 200M8A|__40n 25n _|350n 90n__|500me 10 Z|150mgi100 #A | | 8.0p$ _IN Si_|125S/1T0106 2S5A742H 2OOMSA, 40n% 100nS 13.0 5.0 S }150mz/250 8.0pi P-PE 51 11755 [TO39 28C395A 200M8A| 40nd 50n 30n {250m 1.0% | 10mZj200 Zi* | 25 6.0pi N-PE Si |175J |TO18 40218 200M8A|__40n@ | 25ns 75n@_|300m 1.0% | 10mg 20 ta 5.0p N |Si [175 |TO52 40222 200MSA| 40n@ | 25ns 75n@ [300m 1.0 Z| 10mgl 20 TA 6.0pu N $i 1176 [TO52 A5T2907 200M8A| 40n 10n 80n 30n 16 10 G11.0mH| 50 A (|3.2 # ([8.0p4 Pt Si 1150S |R203 A5T2907A 200MSA|__40n 10n 80n 30n