MITSUBISHI SEMICONDUCTOR<STD-Linear IC> M62216FP/GP Low Voltage Operation STEP-UP DC-DC Converter DESCRIPTION The M62216FP is designed as low voltage operation STEP-UP DC-DC converter. This IC can operate very low input voltage (over 0.9V) and low power dissipation (circuit current is less than 850p/A). So, this IC suitable for power supply of portable system that using low voltage battery (DRY battery, rechargeable battery). FEATURES + Pre-Drive type PWM output (Pre-Drive only) * Low voltage Operation + +++ ++++++s VIN=0.9V min. * Low Current Dissipation + ++ ++++++++ |B=85QUA typ. * Pre-Drive output current can be adjusted * Built-in ON/OFF Function + +++ +++ ++ IB(OFF)=35pA typ. * Application for STEP-DOWN Converter can be used APPLICATION DC-DC Converter for portable sets of battery used PIN CONFIGURATION(TOP VIEW) DRIVE2(1}/10 = [8] BIAS a DRIVE? [2] 8 [7] ON/OFF oO Pwo [3 | qj 6] IN => eno [4 g 3] FB OUTLINE: 8P2S-A(FP) 8P2X-A (GP) BLOCK DIAGRAM ON/OFF DRIVE2 -{2) DRIVE1 PWM wane ene nnn Ga} nnn ene eee e eee - (1/8) 9812 Me b24982b 0027704 961 oeMITSUBISHI SEMICONDUCTOR<STD-Linear IC> M62216FP/GP Low Voltage Operation STEP-UP DC-DC Converter ABSOLUTE MAXIMUM RATINGS (Ta=25C , unless otherwise noted) Symbol Parameter Condition Ratings Unit VIN input Voltage 15.5 Vv VBIAS | Bias Terminal Supply Voltage 15.5 V VDRIVE1 | Drive1 Terminal Supply Voltage 15.5 V VDRIVE2 | Drive2 Terminal Supply Voltage 15.5 V IDRIVE1 | Drive1 Terminal Input Current 100 mA IDRIVE2 | Drive2 Terminal Input Current 10 mA Pd Power Dissipation Ta=25C 440 (FP) 250 (GP) | mW Topr | Operating Temperature -20 ~+85 C Tstg | Storage Temperature -40 ~+150 C ELECTRICAL CHARACTERISTICS (Ta=25C, VIN=1.7V, VOUT=VBIAS=3.0V, unless otherwise noted) Block | Symbol Parameter Test Condition ame . Max| Unit VIN Input Voltage Range 0.9 15 | V All VBIAS BIAS Voltage Setting Range *1 1.7 15| V Device} |B BIAS Current 850 11200] pA IB(OFF) } BIAS Current at OFF Mode 35 | 47 | pA Voltage | VREF Reference Voltage Use internal amp as Buffer-amp {| 1.20] 1.261/1.32} Vv Reference AVREF | BIAS Voltage Regulation of VREF| VBIAS=1.7~15V 10 | 30 | mv liN Input Current IN=1V/IM 20 nA Error | AV Open Loop Voltage Gain fIN = 100Hz , Null Amp Operation 70 dB Amp. | IFB+ FB Terminal Sink Current IN = 1.4V , FB =1.25V/IM 260 | 800 HA IFB- FB Terminal Source Current IN=1.1V, FB =1.25V/1M 30 | 45 | 60] PA fosc Oscillation Frequency PWM Terminal Monitored 95 | 125] 155} KHz Osc. DUTY max | Maximum ON Duty PWM Terminal Monitored ,IN=1.14V] 82 | 87] 92 | % Vsatt | Bw Tom, ance DRIVET Term, IDRIVE1=50mA, 0.25) 0.5] V BOs ae een ___| IDRIVE2-6mA ro | 12| Vv A. IL1 Leak Current of DRIVE1 Terminal} IN = 1.4V -1 1] pA 3 IL2 Leak Current of DRIVE2 Terminal] IN = 1.4V -1 1 pA VPWM(L) | Output Low Voltage of PWM Terminal] PWM = 1mA 0.03] 0.3] V ION Het rurrent of ON/OFF Terminal 2 3 yA ON/OFF | rayon) | Threshold Voltage of ON/OFF 0.65|0.75| Vv *1 : Setting range of BIAS voltage as same as setting range of output voltage . (2/ 8) @@ 6249826 0027705 616MITSUBISHI SEMICONDUCTOR<STD-Linear IC> M62216FP/GP Low Voltage Operation STEP-UP DC-DC Converter Application circuit (1). Standard Application circuit Vout + VIN :0.9 ~ 14V Co VOUT : 1.7 ~15V (VOUT > VIN) R1 R2 (2). Application circuit 1 (VIN 2 1.7V) VIN O Cin VIN :1.7~14V VouT: 2.5V ~ 15V ( VOUT > VIN) Or VIN 1.7 ~15V ON/OFF BIASG vour: (Vour > VIN) DRIVE2(; DRIVE1; VIN :2.0~15V VOUT : 1.7V ~ 14V ( VOUT < VIN) (3/8) MM 6249826 0027706 754 meMITSUBISHI SEMICONDUCTOR<STD-Linear IC> M62216FP/GP Low Voltage Operation STEP-UP DC-DC Converter TYPICAL CHARACTERISTICS THERMAL DERATING BIAS CURRENT vs. BIAS VOLTAGE (ABSOLUTE MAXIMUM RATING) (Ta=25C) 600 1.6 = E 500 _ 14 z E 400 @ 1.2 5 5 LT = | 4 | < 300 1.0 a a a 2 B 200 G08 : 100 0.6 5 ~ " 0 S 0.4 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 AMBIENT TEMPERATURE Ta (C) BIAS VOLTAGE VBIAS (V) BIAS CURRENT vs. AMBIENT OFF STATE BIAS CURRENT vs. TEMPERATURE BIAS VOLTAGE (ON/OFF=GND) neces VeIAS=1.7V EK seeeee Taz -20C 14f VBIAS=3.0V 2 Ta= +25C ~@ 7 | ~~ 7 ~veias=15v ia - Ta= +85C = a T c 60r- @ 12 == os weeks b -l Q= eo W 49 oF 40 at fom wm pT ES = - o os Seep E < wef] 20 Oo 1 0.6 o 0.4 0 40 -20 0 20 40 60 80 100 0 2 4 6 8 10 12 14 16 AMBIENT TEMPERATURE Ta (C) BIAS VOLTAGE VBIAS (V) OPEN LOOP GAIN vs. INPUT FREQUENCY FB VOLTAGE vs. FB SINK CURRENT (Vin=0.1Vrms , Null Amp , Ta=25C) (VBIAS=3.0V, IN=1.4V) 100 1.25 , torte VBIAS=1.7V ' } a VBIAS=3.0V , S 8 | -VBIAS=15V = 1.00 ' } > 80 : 1 z : ' Z . - mn wy 0.75 x Fr LORIN o ; 5 N e ULL NS 0.50 g S : | G 40 q * = T 5 s 0.25 ae Ta= -20C we Ta= +25C 0.00 ue me me = Taz +85C 7O.01 0.1 1 10 100 0 02 04 06 08 1.0 12 1.4 INPUT FREQUENCY fin (KHz) FB SINK CURRENT IFB+ (mA) (4/7 8) M@@ 6249826 0027707 50 aMITSUBISHI SEMICONDUCTOR<STD-Linear IC> M62216FP/GP Low Voltage Operation STEP-UP DC-DC Converter OSCILLATING FREQUENCY vs. FB SOURCE CURRENT vs. FB VOLTAGE BIAS VOLTAGE (VBIAS=3.0V, IN=1.1V) (PWM Terminal Monitored , Ta=25C) 60 160 z ? = 50 == = & L 8 140 & 40 aap aa aaa 3 a \ \ z= Lu f 30 1 - 3 x 7 & 120 o \ \ ' fF Ww \ @ 20 v g s cree Taz -20c | | ' E 100 Oo a Ta= +25C | 1 4 2 WO -ta= +85C il ts 9 iT ' 2 oe 1 1 1 ahi a 0 05 10 15 20 25 3.0 09 2 4 6 8 10 12 14 16 FB VOLTAGE Vrs (V) BIAS VOLTAGE VBIAS (V) OSCILLATING FREQUENCY vs. AMBIENT TEMPERATURE MAX ON DUTY vs. BIAS VOLTAGE (PWM Terminal Monitored, IN=1.1V) (PWM Terminal Monitored, IN=1.1V, Ta=25C) 160 l T T 100 PF | | | ------ VBIAS=1.7V x =~ ~ VBIAS=3.0V ZX o5 g 140 -VBIAS=15V s > > 2 a 5 90 2 eh a i 120 ad > ig . 5 85 g a = Zz < 100 o a g 80 80 75 40 -20 0 20 40 60 80 100 0 2 4 6 8 10 12 14 16 AMBIENT TEMPERATURE Ta (C) BIAS VOLTAGE VBIAS (V) SATURATION VOLTAGE BETWEEN PWM-DRIVE1 MAX ON DUTY vs. AMBIENT TEMPERATURE TERMINAL vs. INPUT CURRENT OF ORIVE1 TERMINAL (PWM Terminal Monitored , IN=1.1V) (IDRIVE2=5mA, IN=1.1V, Ta=25C) 100 1.0 T T T T ~ VBIAS1.7V ee vaias=1.7v_ | x VBIAS=3.0V ui VBIAS=3.0V. | % 95 - VBIAS=15V y 0.8 - - + - - VBIAS=9.0V g be -VvBIAs=15v) | |! > or Mh 5 ws L+ 90 Os 06 a 5 7 4 > a y . 5 Se al / a 85 z 04 soe : S | y oO q 2 ee | x an Z 80 > 0.2 = o Lh 75 0.0 40 -20 0 20 40 60 80 100 0 10 20 30 40 50 60 70 AMBIENT TEMPERATURE Ta (C) INPUT CURRENT OF DRIVE1 TERMINAL {DRIVE1 (mA) (5/ 8) mm &24982b 0027708 Sc?MITSUBISHI SEMICONDUCTOR<STD-Linear IC> M62216FP/GP Low Voltage Operation STEP-UP DC-DC Converter SATURATION VOLTAGE BETWEEN PWM-DRIVE1 SATURATION VOLTAGE BETWEEN PWM-DRIVE2 TERMINAL vs. INPUT CURRENT OF DRIVE1 TERMINAL TERMINAL vs. INPUT CURRENT OF DRIVE2 TERMINAL (VBIAS=3.0V, IN=1.1V, Ta=25C) (IN=1.1V, Ta=25C) 0.5 - 1.7 i | | ff Zs : B= | ocreeee VBIAS=1.7V IDRIVE1=20mA We 04 Wey 4.5 L- = Vaias=3.0V IDRIVE1=50mA 4 - Ss . FS - VBIAS=15V IDRIVE1=40mA ts > . iw > oO 3 * | , 4 a Zz oF 03 1 > QZ 13 === ES ' 4 52 f 7a , a 5 fo ot o2 tt 4 / SF 44 zn . zu lf. 9 W Z | 2 5 Lene <r a <i on 9 5,/ 47 |------ IDRIVE2=2mA | Eo og dened pe IDRIVE2=5mA ES Tet 4 oa -DRIVEZ=10mA oa 0.0 0.7 0 20 40 60 80 100 120 0 2 4 6 8 0 12 INPUT CURRENT OF DRIVE1 TERMINAL [oRivet (mA) INPUT CURRENT OF DRIVE2 TERMINAL IDRIVE2 (mA) Vs: PAM SINK CURRENT 1 NENT ON SEEN ae (VBIAS=3.0V, IN=1.4V) . 0.6 : 1 4.0 : I w 05 : = Oo a J < =< : I => 3.0 0.4 g S ' : 2 ~4-l-4-r 35 ei Ee zz 0.3 . 3 2.0 ere a ao ; f z 57 02 7 7 : i 5 4.9 H+} see VBIAS=VON=1.7V _] s 0.4 : eee Ta -20C | a VBIAS=VON=3.0V . Lae $$ Tat 25C - ~- VBIAS=VON=15V 7 TTT c Terese [ | | Jt J 0.0 tt 0.0 0 2 4 6 8 10 12 40 -20 0 20 40 60 80 100 PWM SINK CURRENT (mA) AMBIENT TEMPERATURE Ta (C) THRESHOLD VOLTAGE OF ON/OFF TERMINAL Mo eR VOtraee vs. AMBIENT TEMPERATURE (VBIAS=3.0V) noo sane Apolication Circuit, Vo~3.0V, Ta=28C) 5 Tr:28C3052-F, L:68uH, & We 175 RD1:6809, RD2:1.6KQ 0.8 f wm oe | TH2SC343S-H, L:22UH, 6S > 150 - RD1:1.3KQ, RD2:3.3KQ 7 bs = ad oO a 6 i a OY 0.6 a2 125 =< E at, Ga 5 => 100 a Q2 ee - S 04 So 55 2 a = ad fo 20 = oc 50 ae E > we 0.2 o on -z 25 0.0 0 40 -20 0 20 40 60 80 100 0.8 4.0 1.2 1.4 1.6 AMBIENT TEMPERATURE Ta (C) INPUT VOLTAGE VIN (V) (6/ 8) Mm &b2498eb 0027709 465MITSUBISHI! SEMICONDUCTOR<STD-Linear IC> M62216FP/GP Low Voltage Operation STEP-UP DC-DC Converter 100 EFFICIENCY (%) r= 2 o So 3 ho o EFFICIENCY vs. LOAD CURRENT MAX LOAD CURRENT FOR START-UP(*2) (Standard Application circuit: vs. INPUT VOLTAGE VIN=1.5V,Vo=3.0V, Ta=25C) (Application circuit 1: Vo=5.0V, Ta=25C) 200 175 | 5 < 150 a> ee ac 5 a 125 + Fa e oe - 88 0 ote o= Tr:25C3052-F,L:150yH, ag 7 - RD1:7509,RD2:3.6KQ = - 7 Or: ~ = Tr:28C3439-H,L:22pH, Te2SC3052-F =a 59 - RD1:1.3K0,RD2:6.8K2 4 - Tr:28C3439-H 4 som 25 0 10 100 1000 1.5 2.0 2.5 3.0 3.5 4.0 LOAD CURRENT lo (mA) INPUT VOLTAGE VIN (V) EFFICIENCY vs. LOAD CURRENT (Application circuit 1: ViN=3.0V,Vo5.0V, Ta=25C) 100 80 n o EFFICIENCY (%) > o 20 od ITH > #" _ Tr:28C3052-F ma - Tr:28C3439-H 1 1 10 100 1000 LOAD CURRENT Io (mA) 1, *2: These characteristics show the maximum output load current when start-up. Therefore, output voltage can grown-up to setting voltage less than a curve in the graph when using these external components value. (* 2SC3052-F : hFE=250 ~ 500, 2$C3439-H : hFE=600 ~ 1200) (7/8) Mm b2498eb 0027710 1465Equation for Constants Calculation MITSUBISHI SEMICONDUCTOR<STD-Linear IC> M62216FP/GP Low Voltage Operation STEP-UP DC-DC Converter Constants Standard Application Circuit Application Circuit 1 Application Circuit 2 TON VO + VF - VIN VO + VF - VIN VO + VF -VIN TOFF VIN - VCE(sat) VIN - VCE(sat) VIN - VCE(sat) 1. i 1 TON*+TOFF fosc fosc fosc TON + TOFF TON + TOFF TON + TOFF TOFF(MIN) 144 ON 4+ _TON 4+ TON_ TOFF TOFF TOFF 1 1. 1 TON(MAX) fosc ~ TOFF(MIN) fose TOFF(MIN) fosc TOFF(MIN) . TON . . TON . . TON . Ipk 2 (1 * TOFF ) (lo + IB) 2 (1 + TOFF ) lo 2 (1 * TOFF } lo (VIN - VCE(sat)) 2 * TON(MAX) 2 * fosc | (VIN - VCE(sat)) 2 * TON(MAX) 2 * fosc | (VIN - VCE(sat)) 2 * TON(MAX) 2 * fose L(MIN) 2* Vo (lo + IB) 2*Vo*lo 2*Vo*lo Vo . Vo . Vo . R1 (TREE -1)*R2 ( VREF ~ 1) R2 (VRE - 1) * Re Rpt Vo - (VBE + Vsat1) Vo - (VBE + Vsatt) VIN - (VBE + Vsat1) (Ipk / hFE) * A14 (Ipk / HFE) * A1 (Ipk / HFE) * A1 RD2 Vo - (VBE + Vsat2) Vo - (VBE + Vsat2) VIN - (VBE + Vsat2) (Ipk / hFE) * A2 (Ipk / hFE) * A2 (Ipk / hFE) * A2 Constants STEP-DOWN Circuit Notice) TON VO + VF * VF : Forward voltage of external diode. TOFF VIN - VCE(sat) - Vo + VCE(sat) : Saturation voltage of external transistor. 4 * VBE : Voltage between Base - Emitter of external transistor. TON+TOFF fosc * hFE : hFE of external transistor at saturating. TON + TOFF * A1 : Ratio of current into DRIVE1 terminal. TOFF(MIN) 44 TON (A1 = 0.8 ~ 0.9) TOFF A2: Ratio of current into DRIVE2 terminal. 5 (A2=1- A) TON(MAX) foso TOFF(MIN) * A3: Ratio of current into DRIVE2 terminal. (A3 = 0.1 ~ 0.2) Ipk 2* Ilo * Set R2 to several KQ ~ several 10ths kQ. * Set current into DRIVE2 terminal more than 100uA. (VIN - VCE(sat) - Vo) * TON(MAX) (Ipk / hFE) * A2 > 100pA, (Ipk / hFE) * A3 > 100pA,,. L(MIN) Alo * Set Alo to 1/5 ~ 1/3 of maximum load current. Vo * The maximum rating of current of external parts (transistor, R1 ( VREF ~ 1) R2 diode and inductor) are 1.5 to 2 times of Ipk. Rpt Vo - VBE - Vsat1 Ipk / hFE VIN - Vsat2 RD2 ____ (Ipk / hFE) * A3 MM 6249826 0027712 01] = (8/ 8) 144313