Features Applications
PHOTODIODE
Si APD
Short wavelength type APD
S8664 series
l
High sensitivity at visible range
l
Low noise
l
High gain
l
Low capacitance
l
Low-light-level measurement
l
Analytical equipment
1
■
General ratings / Absolute maximum ratings
Absolute maximum ratings
Effective *2
active area size
Effective active
area
Type No.
Dimensional
outline
/Window
material *1
Package
(mm) (mm2)
Operating
temperature
Topr
(°C)
Storage
temperature
Ts t g
(°C)
S8664-02K φ0.2 0.03
S8664-05K φ0.5 0.19
S8664-10K φ1.0 0.78
S8664-20K
➀/K TO-5
φ2.0 3.14
S8664-30K φ3.0 7.0
S8664-50K ➁/K TO-8 φ5.0 19.6
-55 to +100
S8664-55 ➂/E 5 × 5 25
S8664-1010 ➃/E Ceramic 10 × 10 100
-20 to +60
-20 to +80
■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Spectral
response
range
λ
Peak *
3
sensitivity
wavelength
λp
Photo
sensitivity
S
M=1
λ
=420 nm
Quantum
efficiency
QE
M=1
λ
=420 nm
Breakdown
voltage
VBR
ID=100 µA
Temperature
coefficient of
VBR
Dark *3
current
ID
Cut-off
frequency
fc
Ter m i n al *
3
capacitance
Ct
Excess *3
Noise
index
λ=420 nm
Gain
M
λ=420 nm
Type No.
(nm) (nm) (A/W) (%)
Typ.
(V)
Max.
(V) (V/°C)
Typ.
(nA)
Max.
(nA) (MHz) (pF)
S8664-02K 0.1 1 700 0.8
S8664-05K 0.2 1.5 680 1.6
S8664-10K 0.3 3 530 4
S8664-20K 0.6 6 280 11
S8664-30K 1 15 140 22
S8664-50K 3 35 60 55
S8664-55 5 50 40 80
S8664-1010
320 to
1000 600 0.24 70 400 500 0.78
10 100 11 270
0.2 50
*1: K: Borosilicate glass E: Epoxy resin
*2: Area in which a typical gain can be obtained.
*3: Values measured at a gain listed in the characteristics table.
Si APD
S8664 series
2
■ Spectral response ■ Quantum efficiency vs. wavelength
■ Dark current vs. reverse voltage ■ Gain vs. reverse voltage
KAPDB0073EB KAPDB0074EB
KAPDB0075EB KAPDB0076EB
10
25
20
15
0
5
PHOTO SENSITIVITY (A/W)
(Typ. M=50)
WAVELENGTH (nm)
200 400 600 800 1000 1200
S8664-02K/-05K/-10K/
-20K/-30K/-50K
S8664-55/-1010
40
100
80
60
0
20
QUANTUM EFFICIENCY (%)
WAVELENGTH (nm)
200 400 600 800 1000 1200
(Typ. Ta=25 ˚C)
S8664-02K/-05K/-10K/
-20K/-30K/-50K
S8664-55/-1010
1 nA
1 µA (Typ. Ta=25 ˚C)
100 nA
1 pA
10 pA
10 nA
100 pA
DARK CURRENT
REVERSE VOLTAGE (V)
100 200 300 400 500
S8664-50K
S8664-30K
S8664-10K
S8664-02K
S8664-1010
S8664-55
1000 (Typ. λ=420 nm)
1
100
10
GAIN
REVERSE VOLTAGE (V)
200 300 400 500
-20 ˚C
0 ˚C20 ˚C
40 ˚C
60 ˚C
■ Terminal capacitance vs. rev erse voltage
KAPDB0077EB
10 nF (Typ. Ta=25 ˚C, f=10 kHz)
1 nF
100 fF
100 pF
10 pF
1 pF
TERMINAL CAPACITANCE
REVERSE VOLTAGE (V)
0 100 200 300 400 500
S8664-30K
S8664-55
S8664-10K S8664-02K
S8664-50K
S8664-1010
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable . Howe ver, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2005 Hamamatsu Photonics K.K.
Cat. No. KAPD1012E04
Sept. 2005 DN
Si APD S8664 series
KAPDA0026EA
■ Dimensional outlines (unit: mm)
KAPDA0027EA
➀ S8664-02K/-05K/-10K/-20K ➁ S8664-30K/-50K
2.8
(20) 4.2 ± 0.2
0.4 MAX.
5.9 ± 0.1
5.08 ± 0.2
S8664-02K 0.2
Type No. a
S8664-05K 0.5
S8664-10K 1.0
S8664-20K 2.0
Y
X
8.1 ± 0.1
9.1 ± 0.2
1.5 MAX.
ACTIVE AREA
a
PHOTOSENSITIVE
SURFACE
0.45
LEAD
CASE
The glass window may extend
a maximum of 0.2 mm beyond
the upper surface of the cap.
3.1
(15) 4.9
INDEX MARK
1.4
PHOTOSENSITIVE SURFACE
0.5 MAX.
13.9 ± 0.2
12.35 ± 0.1
10.5 ± 0.2
7.5 ± 0.2
1.0 MAX.
ACTIVE AREA
a
0.45
LEAD
CASE S8664-30K 3.0
Type No. a
S8664-50K 5.0
The glass window may extend
a maximum of 0.2 mm beyond
the upper surface of the cap.
➂ S8664-55
5.0
1.5 5.08
(3.0) (5.5)
0.45
5.0
0.3 MAX.
2.0
1.2
1.655.0 9.0
10.6
ACTIVE AREA
5 × 5
0.80
INDEX MARK
General tolerance: ±0.2
EPOXY RESIN
PHOTOSENSITIVE
SURFACE
KAPDA0022EA
➃ S8664-1010
5.08
(2 ×) 2
0.5
* From center of active area
to center of package
0.5
6.0 0.4 *
1.18
(0.2)
5 1.78 14.5
13.7 ACTIVE AREA
10 × 10
(4 ×) C0.5
PHOTOSENSITIVE
SURFACE
EPOXY RESIN
General tolerance: ±0.2
0.46
0.70
KAPDA0036EA
