Transistors PNP silicium 2N 5354 Planar epitaxiaux 2N 5355 PNP silicon transistors 2N 5356 Epitaxial planar Planepox 3K Dispositif recommand Prefered device - Amplification BF (faible bruit) Donnes principales LF amplification (low noise) Princigal features - Commutation moyenne vitesse Medium speed switching - Usage gnral et applications industrizlles VcEO ~25 V General use and industrial applications h 40-120 2N 5354 21E 100 - 300 2N 5355 (50 mA) 250-500 2N5356 fy 250 MHz typ. Dissipation de puissance maximale Maximum power dissipation Pro (wl Boitier plastique TO-98 0,36 Plastic case , N t 0,24} 1 | . 5 0,12 t we N c ol} \ tamblC) O 25 125 200 Valeurs limites absolues d'utilisation & tamb= 25C Absolute ratings (limitiag values) Csnecrorbecc woltane Veso 25 v Collector omiter valresee VcEo -25 v Eeorbare tenons VEBo ~4 v Conccrer curt le 300 mA Seurentcolctur de pointes, =1048,6.=2%| oy 700 ma Power dispaton nee Prot 0,36 w Jenction tempers max 4 125 og Temprature de stockage min t 65 Storage temperature max stg +150 c eT 1970 - 07 V3 Sesocenit2N 5354 2N 5355 2N 5356 Caractristiques gnrales a tamb = 25C General characteristics (Sauf indications contraires} {Unless otherwise specified) Caractristiques statiques Static characteristics Courant rsiduel collecteur-base = 1 Collector-base cut-off current Ip = 0 CBO Veg = ~25V 10 | HA tamb = 100C Courant rsiduel collecteur-metteur VBE 0 I 100! nA Collector-emitter cut-off current Vee = 25V CES 7 . I =0 Courant rsiduel metteur-base c Emitter-base cut-off current Vep = -4V 'EBO 10 | BA Tension de claquage collecteur-metteur iB = 0 * Collector-em inter breakdown voltage le = 10mA Mr) R)CEO} --25 v 2N 5354. 32 Ile = -2mA 30 Vog = -10V 2N 5355 2N 5356 k 200 21 40 120 Valeur statique du rapport du transfert ! = ~5O0mA 2N 5354 direct du courant c * m 2N 5355 100 300 Static forward current transfer ratio Voce =-1V 2N 5356 250 500 2N 5354 20 Iq = 300mA hoi Veg = BY 2N 5355 21E 40 2N 5356 75 Tension base-metteur Ic = -2mA Vv 05 os| v Base-emitter voltage VcE = -10V BE ~ ~ Io = 50mA Ig = -2,5mA Voesat 0,25 Tension de saturation collecteur-metteur B : Vv Collector-emitter saturation voltage { = 300mA c Votsat -1 Ip = 30mA le = 50mA V = 1,1 Tension de saturation base-metteur Ip = ~2,5mA BEsat Vv Base-emitter saturation voltage T = ~300mA c Vv 2 Ip = 30mA BEsat * impulsions t.=300us 5 < 2% Pulsed Pp 2/32N 5354 2N 5355 2N 5356 Caractristiques gnrales a tamb = 25C General characteristics Caractristiques dynamiques (pour petits signaux) Dynamic characteristics (for small signals) Max. Max. 2N 5354 180 Rapport de transfert direct du courant = Forward current transter ratio lc _ 2 mA 2N 5355 he le 80 450 Voce = 10V | on 5356 200 750 Imoed ; ' f = tkHz 2N 5354 1300 mpdance dentre = input impedence Io = 2mA [on 53651 hate 2000 2 Voce = 10V [an 5356 8700 f = 1k Rapport de transfert inverse ad 2N'8354 16 de fa tension lo = -2mA_ | 2N 5355 hie 2 10-4 inverse voltage transfer ratio = mere Vee = ~10V [on 5356 4 f = 1kHz 2N 5354 24 Admittance de sortie 1 = Output admittance _ ow 2N 5355 ho2e 37 us CE 2N 5356 100 Io = -2mA rquence de transition = Transition frequency Voce = 10V fr 250 MHz = 100 MHz Vv = 10V Capacit de sortie | cB =0 c Output capacitance E = 22b 8 pF f = 1MHz Vv = -05V Capacit dentre | EB = 0 Input capacitance c ~ C, tb 35 pF f = 1MHz 3/3