BY268 / BY269 Vishay Semiconductors Fast Avalanche Sinterglass Diode Features * * * * Glass passivated junction Hermetically sealed package e2 Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications High voltage fast rectification diode 949539 Mechanical Data Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 369 mg Case: SOD-57 Sintered glass case Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Parts Table Part Type differentiation Package BY268 VR = 1400 V; IFAV = 0.8 A SOD-57 BY269 VR = 1600 V; IFAV = 0.8 A SOD-57 Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition Peak reverse voltage, non repetitive Reverse voltage Peak forward surge current see electrical characteristics Part Symbol Value Unit BY268 VRSM 1600 V BY269 VRSM 1800 V BY268 VR 1400 V BY269 VR 1600 V IFSM 20 A tp = 10 ms, half sinewave Average forward current Junction and storage temperature range Non repetitive reverse avalanche energy I(BR)R = 0.4 A IFAV 0.8 A Tj = Tstg - 55 to + 175 C ER 10 mJ Maximum Thermal Resistance Tamb = 25 C, unless otherwise specified Parameter Junction ambient Document Number 86005 Rev. 1.6, 13-Apr-05 Symbol Value Unit on PC board with spacing 25 mm Test condition Part RthJA 100 K/W L = 10 mm, TL = constant RthJA 45 K/W www.vishay.com 1 BY268 / BY269 Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Forward voltage IF = 0.4 A Reverse current VR = 1400 V Reverse recovery time Part Symbol Min Typ. Max VF BY268 IR 1 1 V 2 A 2 A 15 A IR 15 A trr 400 ns VR = 1600 V BY269 IR VR = 1400 V, Tj = 100 C BY268 IR VR = 1600 V, Tj = 100 C BY269 IF = 0.5 A, IR = 1 A, iR = 0.25 A Unit 1.25 RthJA -Therm.Resist. Junction/ Ambient ( K/W) Typical Characteristics (Tamb = 25 C unless otherwise specified) 120 80 60 l l 40 20 TL= constant 0 0 5 10 15 20 25 R thJA = 45 K/W l=10mm 0.8 0.7 0.6 0.5 R thJA=100 K/W PCB: d = 25 mm 0.4 0.3 0.2 V R = VRRM half sinewave 0.1 0.0 30 l - Lead Length ( mm ) 94 9090 0.9 I FAV - Average Forward Current ( A ) 100 0 Figure 1. Typ. Thermal Resistance vs. Lead Length 20 40 60 80 100 120 140 160 180 T amb - Ambient Temperature ( C ) 16413 Figure 3. Max. Average Forward Current vs. Ambient Temperature 10 1000 I R - Reverse Current ( A ) I F - Forward Current ( A) V R = VRRM 1 Tj =175C Tj = 25C 0.1 0.01 0.001 0.0 16412 2 10 1 0.5 1.0 1.5 2.0 V F - Forward V oltage ( V ) 2.5 Figure 2. Forward Current vs. Forward Voltage www.vishay.com 100 25 16414 50 75 100 125 150 175 Tj - Junction T emperature ( C ) Figure 4. Reverse Current vs. Junction Temperature Document Number 86005 Rev. 1.6, 13-Apr-05 BY268 / BY269 Vishay Semiconductors 35 V R = VRRM 800 CD - Diode Capacitance ( pF ) PR - Reverse Power Dissipation ( mW ) 900 700 600 PR -Limit @100 % VR 500 400 PR -Limit @ 80 % VR 300 200 100 0 25 16415 50 75 100 125 150 Tj - Junction Temperature ( C ) 25 20 15 10 5 0 0.1 175 1 10 100 V R - Reverse Voltage ( V ) 16416 Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature f = 1 MHz 30 Figure 6. Diode Capacitance vs. Reverse Voltage Package Dimensions in mm (Inches) Sintered Glass Case SOD-57 3.6 (0.140)max. 94 9538 Cathode Identification ISO Method E 0.82 (0.032) max. 26(1.014) min. Document Number 86005 Rev. 1.6, 13-Apr-05 4.0 (0.156) max. 26(1.014) min. www.vishay.com 3 BY268 / BY269 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 86005 Rev. 1.6, 13-Apr-05