BY268 / BY269
Document Number 86005
Rev. 1.6, 13-Apr-05
Vishay Semiconductors
www.vishay.com
1
949539
Fast Avalanche Sinterglass Diode
Features
• Glass passivated junction
• Hermetically sealed package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
High voltage fast rectification diode
Mechanical Data
Case: SOD-57 Sintered glass case
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 369 mg
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Part Type differentiation Package
BY268 VR = 1400 V; IFAV = 0.8 A SOD-57
BY269 VR = 1600 V; IFAV = 0.8 A SOD-57
Parameter Test condition Part Symbol Value Unit
Peak reverse voltage, non
repetitive
BY268 VRSM 1600 V
BY269 VRSM 1800 V
Reverse voltage see electrical characteristics BY268 VR1400 V
BY269 VR1600 V
Peak forward surge current tp = 10 ms, half sinewave IFSM 20 A
Average forward current IFAV 0.8 A
Junction and storage
temperature range
Tj = Tstg - 55 to + 175 °C
Non repetitive reverse
avalanche energy
I(BR)R = 0.4 A ER10 mJ
Parameter Test condition Part Symbol Value Unit
Junction ambient on PC board with spacing
25 mm
RthJA 100 K/W
L = 10 mm, TL = constant RthJA 45 K/W
e2
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Document Number 86005
Rev. 1.6, 13-Apr-05
BY268 / BY269
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Part Symbol Min Typ. Max Unit
Forward voltage IF = 0.4 A VF1.25 V
Reverse current VR = 1400 V BY268 IR12µA
VR = 1600 V BY269 IR12µA
VR = 1400 V, Tj = 100 °C BY268 IR15 µA
VR = 1600 V, Tj = 100 °C BY269 IR15 µA
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr 400 ns
Figure 1. Typ. Thermal Resistance vs. Lead Length
Figure 2. Forward Current vs. Forward Voltage
0
0
20
40
60
80
120
R –Therm.Resist. Junction/ Ambient ( K/W)
thJA
l – Lead Length ( mm )
94 9090
51015 25
30
20
100
ll
T
L
= constant
I - Forward Current ( A)
0.001
0.01
0.1
1
10
0.0 0.5 1.0 1.5 2.0 2.5
V
F
- Forward V oltage(V)
16412
F
T
j
=25°C
T
j
=175°C
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 4. Reverse Current vs. Junction Temperature
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0 20 40 60 80 100 120 140 160 180
T
amb
- Ambient Temperature (°C)
16413
I - Average Forward Current ( A )
FAV
V
R
=V
RRM
half sinewave
R
thJA
=45K/W
l=10mm
R
thJA
=100 K/W
PCB:d=25mm
1
10
100
1000
25 50 75 100 125 150 175
T
j
- Junction T emperature (°C)
16414
V
R
=V
RRM
I - Reverse Current ( µA)
R
BY268 / BY269
Document Number 86005
Rev. 1.6, 13-Apr-05
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in mm (Inches)
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
0
100
200
300
400
500
600
700
800
900
25 50 75 100 125 150 175
T
j
– Junction Temperature ( °C)
16415
V
R
=V
RRM
P – Reverse Power Dissipation ( mW )
R
P
R
-Limit
@100 % V
R
P
R
-Limit
@80%V
R
Figure 6. Diode Capacitance vs. Reverse Voltage
0
5
10
15
20
25
30
35
0.1 1 10 100
V
R
– Reverse Voltage(V)
16416
C – Diode Capacitance ( pF )
D
f=1MHz
Cathode Identification
0.82 (0.032) max.
Sintered Glass Case
SOD-57
94 9538
26(1.014) min. 26(1.014) min.
ISO Method E
3.6 (0.140)max.
4.0 (0.156) max.
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4
Document Number 86005
Rev. 1.6, 13-Apr-05
BY268 / BY269
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
