V
RRM
= 50 V - 1000 V
I
F
=35 A
Features
• Types up to 1000 V V
RRM
KBPC-T/W Package
• Silicon
j
unction
Mechanical Data
Case: Mounted in the bridge encapsulation
Polarity: Marked on case
Parameter
Symbol
KBPC35005T/W
KBPC3501T/W
Unit
KBPC35005T/W thru KBPC3504T/W
KBPC3504T/W
KBPC3502T/W
Maximum ratings, at T
j
= 25 °C, unless otherwise specified (KBPCXXXXT uses KBPC-T package while KBPCXXXXW
uses KBPC-W package)
• Metal case
Silicon Bridge
Rectifier
• High efficiency
Mounting position: Hole for #10 screw
Conditions
Parameter
Symbol
KBPC35005T/W
KBPC3501T/W
Unit
Repetitive peak reverse voltage V
RRM
50 100 V
RMS reverse voltage V
RMS
35 70 V
DC blocking voltage V
DC
50 100 V
Continuous forward current I
F
35 35 A
Operating temperature T
j
-55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol KBPC35005T/W KBPC3501T/W Unit
Diode forward voltage 1.1 1.1
55
500 500
Thermal characteristics
Thermal resistance, junction -
case R
thJC
1.4 1.4 °C/W
-55 to 150
KBPC3504T/W
55
KBPC3502T/W
1.4
V
R
= 50 V, T
j
= 100 °C
1.4
1.1 1.1
500
V
R
= 50 V, T
j
= 25 °C
I
F
= 17.5 A, T
j
= 25 °C
T
C
≤ 55 °C
Conditions
KBPC3504T/W
200
140
KBPC3502T/W
400 400
-55 to 150
35
A400
Reverse current I
R
V
F
400
μA
-55 to 150 -55 to 150
T
C
= 25 °C, t
p
= 8.3 ms
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
500
Conditions
400
280
400200
35
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KBPC35005T/W thru KBPC3504T/W
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