©2006 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGPF120N30 Rev. A
FGPF120N30 300V, 120A PDP IGBT
FGPF120N30
300V, 120A PDP IGBT
Features
• High Current Capability
• Low saturation voltage : VCE(sat) = 1.1 V @ IC = 25A
• High input impedance
• Fast switching
Application
PDP SYSTEM
General Description
Employing Unified IGBT Technology, Fairchild's PWD series of
IGBTs provides low conduction and switching loss. The PWD
series offers the optimum solution for PDP applications where
low condution loss is essential.
TO-220F
1.Gate 2.Collector 3.Emitter
C
E
G
Absolute Maximum Ratings
Thermal Characteristics
Notes
(1) Repetitive test , pulse width=100usec , Duty=0.5
* Ic_pulse limited by max Tj
Symbol Description FGPF120N30 Units
VCES Collector-Emitter Voltage 300 V
VGES Gate-Emitter Voltage ± 20 V
ICCollector Current @ TC = 25°C 120 A
IC_pulse (1) Pulse Collector Current @ TC = 25°C 180 * A
PDMaximum Power Dissipation @ TC = 25°C60 W
Maximum Power Dissipation @ TC = 100°C24 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 °C
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 2.1 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
January 2006
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FGPF120N30 Rev. A
FGPF120N30 300V, 120A PDP IGBT
Package Marking and Ordering Information
Device Marking Device Package
Packaging
Type Qty per Tube Max Qty
per Box
FGPF120N30 FGPF120N30TU TO-220F Rail / Tube 50ea -
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 300 -- -- V
∆BVCES/
∆TJ
Temperature Coefficient of Breakdown
Voltage VGE = 0V, IC = 250uA -- 0.6 -- V/°C
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 100 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 250 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 250uA, VCE = VGE 2.5 4.0 5.0 V
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 25A, VGE = 15V -- 1.1 1.4 V
IC = 120A, VGE = 15V
TC = 25°C-- 1.9 -- V
IC = 120 A, VGE = 15V
TC = 125°C-- 2.1 -- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V,
f = 1MHz
-- 2190 -- pF
Coes Output Capacitance -- 310 -- pF
Cres Reverse Transfer Capacitance -- 98 -- pF
Switching Characteristics
td(on) Turn-On Delay Time VCC = 200 V, IC = 25A,
RG = 8.7Ω, VGE = 15V,
Resistive Load, TC = 25°C
-- 35 -- ns
trRise Time -- 140 -- ns
td(off) Turn-Off Delay Time -- 120 -- ns
tfFall Time -- 140 350 ns
td(on) Turn-On Delay Time VCC = 200 V, IC = 25 A,
RG = 8.7Ω, VGE = 15V,
Resistive Load, TC = 125°C
-- 35 -- ns
trRise Time -- 140 -- ns
td(off) Turn-Off Delay Time -- 130 -- ns
tfFall Time -- 280 -- ns
QgTotal Gate Charge VCE = 200 V, IC =25A,
VGE = 15V
-- 112 168 nC
Qge Gate-Emitter Charge -- 14 21 nC
Qgc Gate-Collector Charge -- 50 75 nC
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FGPF120N30 Rev. A
FGPF120N30 300V, 120A PDP IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
0123456
0
20
40
60
80
100
120
8V
VGE= 6V
10V
12V
15V
20V
Collector-Emitter Voltage, VCE [V]
Collector Current, IC [A]
TC = 25oC
0123456
0
20
40
60
80
100
120
8V
TC = 125oC
Collector-Emitter Voltage, VCE [V]
Collector Current, IC [A]
VGE= 6V
20V
15V 12V
10V
Figure 3 Typical Saturation Voltage
Characteristics Figure 4. Transfer Characteristics
0123
0
20
40
60
80
100
120
Common Emitter
VGe = 15V
Tc = 25oC
Tc = 125oC
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
024681012
0
20
40
60
80
100
120
125oC
25oC
Gate-Emitter Voltage, VGE [V]
Collector Current, IC [A]
VCE = 20 V
Figure 5. Saturation Voltage vs Case
Temperature at Variant Current Level Figure 6. Saturation Voltage vs. Vge
0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
120A
25A
50A
Ic= 12.5A
Collector-Emitter Voltage, VCE [V]
Case Temperature, TC (oC)
6 8 10 12 14 16 18 20
0
1
2
3
4
5
6Common Emitter
TC = 25oC
Collector - Emitter Voltage, V CE [V]
Gate - Emitter Voltage, VGE [V]
12.5A
25A
50A
120A
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FGPF120N30 Rev. A
FGPF120N30 300V, 120A PDP IGBT
Figure 7. Saturation Voltage vs. Vge Figure 8. Capacitance Characteristics
6 8 10 12 14 16 18 20
0
1
2
3
4
5
6
Gate - Emitter Voltage, VGE [V]
Collector - Emitter Voltage, V CE [V]
Common Em itter
TC = 125oC
12.5A
25A
50A
120A
0 5 10 15 20 25 30
100
1000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
Cres
Coes
Cies
Figure 9. Gate Charge Figure 10. SOA Characteristics
0 20 40 60 80 100 120
0
5
10
15
Vcc = 200V
Gate C harge, Qg [nC ]
Gate-Emitter Voltage, VGE [V]
Common Emitter
RL = 10 ohm
TC = 25oC
0.1 1 10 100 1000
0.1
1
10
100 50µs
100µs
1ms
DC Operation
Ic MAX (Pulsed)*
Ic MAX (Continuous)
Single Nonrepetitive
Pulse Tc = 25oC
Curves must be derated
linearly with increase
in temperature
Collector Current, Ic [A]
Collector - E mitter V oltage, VCE [V]
Fig u r e 1 1 . Turn-On Char a c t e ristic s v s . Fig u r e 1 2 . T urn-Off C ha r a c t eristi c s
Gate Resistance
110100
10
100
1000
tr
td(on)
Common Em itter
VCC = 200V, VGE = 15V
IC = 25A
TC = 25oC
TC = 125oC
Gate Resistance, RG [Ω]
Switching Time [ns]
1 10 100
100
1000
tf
tf
td(off)
Gate Resistance, RG [Ω]
Switching Time [ns]
Common Em itter
VCC = 200V, VGE = 15V
IC = 25A
TC = 25oC
TC = 125oC
Gate Resistance
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FGPF120N30 Rev. A
FGPF120N30 300V, 120A PDP IGBT
1E-5 1E-4 1E-3 0.01 0.1 1 10
1E-3
0.01
0.1
1
10
R e c ta ngular P u lse D ura tio n [se c ]
Thermal Response [Zthjc]
0.5
0.2
0.1
0.05
0.02
0.01
s in g le p u lse
Figure 13 Turn-On Characteristics vs. Figure 14. Turn-Off Characteristics vs.
Collector Current Collector Current
10 100
10
100
1000
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
tr
td(on)
Collector Current , Ic [A]
Switching Time [ns]
10 100
10
100
1000
tf
tf
td(off)
Collector Current , Ic [A]
Switching Time [ns]
Common Emitter
VGE = 15V, RG = 8.7Ω
TC = 25oC
TC = 125oC
Figure 15. Switching Loss vs. Figure 16. Switching Loss vs.
Gate Resistance Collector Current
1 10 100
10
100
1000
Eon
Eoff
Gate Resistance, RG [Ω]
Switching Loss [uJ]
Common Emitter
VCC = 200V, VGE = 15V
IC = 25A
TC = 25oC
TC = 125oC
10 100
10
100
1000
Common Emitter
VGE = 15V, RG = 8.7Ω
TC = 25oC
TC = 125oC
Collector Current , Ic [A]
Eoff
Eoff
Eon
Switching Loss [uJ]
Figure 17. Transient Thermal Impedance of IGBT
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
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FGPF120N30 Rev. A
FGPF120N30 300V, 120A PDP IGBT
Mechanical Dimensions
(7.00) (0.70)
MAX1.47
(30°)
#1
3.30 ±0.10
15.80 ±0.20
15.87 ±0.20
6.68 ±0.20
9.75 ±0.30
4.70 ±0.20
10.16 ±0.20
(1.00x45°)
2.54 ±0.20
0.80 ±0.10
9.40 ±0.20
2.76 ±0.20
0.35 ±0.10
ø3.18 ±0.10
2.54TYP
[2.54 ±0.20]
2.54TYP
[2.54 ±0.20]
0.50 +0.10
–0.05
TO-220F
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FGPF120N30 Rev. A
FGPF120N30 300V, 120A PDP IGBT
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CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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2. A critical component is any component of a life support device
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to cause the failure of the life support device or system, or to
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PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
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FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
i-Lo™
ImpliedDisconnect™
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ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
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MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
ScalarPump™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UltraFET®
UniFET™
VCX™
Wire™
Across the board. Around the world.™
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Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I17
