Original Creation Date: 03/12/96
Last Update Date: 07/30/96
Last Major Revision Date: 03/12/96
MN54F32-X REV 1A0 MILITARY DATA SHEET
QUAD 2-INPUT OR GATE
General Description
This device contains four independent gates, each of which performs the logic OR function.
NS Part Numbers
54F32DMQB
54F32FMQB
54F32LMQB
Industry Part Number
54F32
Prime Die
M032
Processing
MIL-STD-883, Method 5004
Quality Conformance Inspection
MIL-STD-883, Method 5005
Subgrp Description Temp ( C)
o
1 Static tests at +25
2 Static tests at +125
3 Static tests at -55
4 Dynamic tests at +25
5 Dynamic tests at +125
6 Dynamic tests at -55
7 Functional tests at +25
8A Functional tests at +125
8B Functional tests at -55
9 Switching tests at +25
10 Switching tests at +125
11 Switching tests at -55
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MILITARY DATA SHEET
MN54F32-X REV 1A0
(Absolute Maximum Ratings)
(Note 1)
Storage Temperature -65 C to +150 C
Ambient Temperature under Bias -55 C to +125 C
Junction Temperature under Bias -55 C to +175 C
Vcc Pin Potential to Ground Pin -0.5V to +7.0V
Input Voltage
(Note 2) -0.5V to +7.0V
Input Current
(Note 2) -30 mA to +5.0mA
Voltage Applied to Output in HIGH State (with Vcc=0V) -0.5V to VccStandard Output -0.5V to +5.5VTRI-STATE Output
Current Applied to Output in LOW State (Max) twice the rated Iol(mA)
ESD Last Passing Voltage (Min) 4000V
Note 1: Absolute Maximum ratings are those values beyond which the device may be damaged or
have its useful life impaired. Functional operation under these condtions is not
implied.
Note 2: Either voltage limit or current limit is sufficient to protect inputs.
Recommended Operating Conditions
Free Air Ambient Temperature 0 C to +70 CCommercial -55 C to +125 CMilitary
Supply Voltage +4.5V to +5.5VMilitary +4.5V to +5.5VCommercial
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MN54F32-X REV 1A0 MILITARY DATA SHEET
Electrical Characteristics
DC PARAMETER
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: VCC 4.5V to 5.5V, Temp range: -55C to 125C
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
IIH Input High
Current VCC=5.5V, VM=2.7V, VINH=5.5V,
VINL=0.0V 1, 3 INPUTS 20 uA 1, 2,
3
IBVI Input High
Current VCC=5.5V, VM=7.0V, VINH=5.5V,
VINL=0.0V 1, 3 INPUTS 100 uA 1, 2,
3
IIL Input LOW Current VCC=5.5V, VM=0.5V, VINH=5.5V 1, 3 INPUTS -0.6 mA 1, 2,
3
VOL Output LOW
Voltage VCC=4.5V, VIL=0.8V, IOL=20mA,
VINH=5.5V 1, 3 OUTPUTS 0.5 V 1, 2,
3
VOH Output HIGH
Voltage VCC=4.5V, VIH=2.0V, IOH=-1.0mA,
VINH=5.5V, VINL=0.0V 1, 3 OUTPUTS 2.5 V 1, 2,
3
IOS Short-Circuit
Current VCC=5.5V, VINH=5.5V, VM=0.0V 1, 3 OUTPUTS -60 -150 mA 1, 2,
3
VCD Input Clamp Diode
Voltage VCC=4.5V, IM=-18mA, VINH=5.5V 1, 3 INPUTS -1.2 V 1, 2,
3
ICCH Supply Current VCC=5.5V, VINL=0.0V, VINH=5.5V 1, 3 VCC 9.2 mA 1, 2,
3
ICCL Supply Current VCC=5.5V, VINL=0.0V 1, 3 VCC 15.5 mA 1, 2,
3
ICEX Output HIGH
Leakage Current VCC=5.5V, VINL=0.0V, VINH=5.5V,
VM=5.5V 1, 3 OUTPUTS 250 uA 1, 2,
3
AC PARAMETER
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: CL=50pf, RL=500 OHMS, TR=2.5ns, TF=2.5ns SEE AC FIGS
tpLH Propagation Delay VCC=5.0V @25C, VCC=4.5V & 5.5V
@-55/125C 2, 4 An/Bn
to On 3.0 5.6 ns 9
2, 4 An/Bn
to On 3.0 7.5 ns 10, 11
tpHL Propagation Delay VCC=5.0V @25C, VCC=4.5V & 5.5V
@-55/125C 2, 4 An/Bn
to On 3.0 5.3 ns 9
2, 4 An/Bn
to On 2.5 7.5 ns 10, 11
Note 1: Screen tested 100% on each device at +25C, +125C & -55C temperature, subgroups A1, 2,
3, 7 & 8.
Note 2: Screen tested 100% on each device at +25C temperature only, subgroup A9.
Note 3: Sample tested (Method 5005, Table 1) on each MFG. lot at +25C, +125C & -55C
temperature, subgroups A1, 2, 3, 7 & 8.
Note 4: Sample tested (Method 5005, Table 1) on each MFG. lot at +25C subgroup A9, and at
+125C & -55C temperature, subgroups 10 & 11.
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