2SK3301
2011-12-13
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)
2SK3301
Switching Regulatorand DC-DC Converter Applications
• Low drain-source on-resistance: RDS(ON) = 15 Ω (typ.)
• High forward transfer admittance: |Yfs| = 0.65 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
• Enhancement mode: Vth = 2.4 to 3.4 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 900 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 900 V
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 1
Drain current Pulse
(Note 1) IDP 2
A
Drain power dissipation (Tc = 25°C) PD 20 W
Single pulse avalanche energy
(Note 2)
EAS 140 mJ
Avalanche current IAR 1 A
Repetitive avalanche energy (Note 3) EAR 2.0 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case Rth (ch-c) 6.25 °C/W
Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 257 mH, RG = 25 Ω, IAR = 1 A
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-7J1B
Weight: 0.36 g (typ.)
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3
2
2SK3301
2011-12-13
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±30 V, VDS = 0 V ⎯ ⎯ ±10 μA
Gate-source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V
Drain cut-off current IDSS V
DS = 720 V, VGS = 0 V ⎯ ⎯ 100 μA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 900 ⎯ ⎯ V
Gate threshold voltage Vth V
DS = 10 V, ID = 1 mA 2.4 ⎯ 3.4 V
Drain-source ON resistance RDS (ON) V
GS = 10 V, ID = 0.5 A ⎯ 15 20 Ω
Forward transfer admittance ⎪Yfs⎪ V
DS = 20 V, ID = 0.5 A 0.3 0.65 ⎯ S
Input capacitance Ciss ⎯ 165 ⎯ pF
Reverse transfer capacitance Crss ⎯ 6 ⎯ pF
Output capacitance Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯ 21 ⎯ pF
Rise time tr ⎯ 15 ⎯
Turn-on time ton ⎯ 60 ⎯
Fall time tf ⎯ 40 ⎯
Switching time
Turn-off time toff
Duty ≤ 1%, tw = 10 μs ⎯ 110 ⎯
ns
Total gate charge
(gate-source plus gate-drain)
Qg ⎯ 6 ⎯ nC
Gate-source charge Qgs ⎯ 3 ⎯ nC
Gate-drain (“miller”) charge Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 1 A
⎯ 3 ⎯ nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
IDR ⎯ ⎯ ⎯ 1 A
Pulse drain reverse current
(Note 1)
IDRP ⎯ ⎯ ⎯ 2 A
Forward voltage (diode) VDSF I
DR = 1 A, VGS = 0 V ⎯ ⎯ −1.7 V
Reverse recovery time trr ⎯ 1300 ⎯ ns
Reverse recovery charge Qrr
IDR = 1 A, VGS = 0 V
dIDR/dt = 100 A/μs ⎯ 1.95 ⎯ μC
Marking
0 V
10 V
VGS
RL = 800 Ω
VDD ≈ 400 V
ID = 0.5 A
VOUT
50 Ω
K3301
Lot No.
Note
Part No.
(or abbreviation code)
Note : A line under a Lot No. identifies the indication of product Labels
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
2SK3301
2011-12-13
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10
0.01
0.01
1
0.1
25
Ta = −55°C
100
101 0.1
0
0
20
30
12 2016
0.5
10
40
48
ID = 1 A
0.25
Ta = −55°C
0
0
0.8
1.6
4 8 2 6 10
25
100
0.4
1.2
2
0
0.8
1.6
2.0
0 10 20 30
1.2
0.4
40 50
VGS = 4 V
4.5
5.0
5.5
6.0
8.0
10
5.75
4.75
4.75
0
0
0.4
0.8
1
2 4 6
VGS = 4 V
4.2
4.5
6.0 8.0
10
5.0
0.6
0.2
8 10
Forward transfer admittance ⎪Yfs⎪ (S)
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
ID – VDS
Drain current ID (A)
Drain-source voltage VDS (V)
ID – VDS
Drain current ID (A)
Gate-source voltage VGS (V)
ID – VGS
Drain current ID (A)
VDS – VGS
Drain current ID (A)
⎪Yfs⎪ – ID
Drain current ID (A)
Drain-source on-resistance
RDS(ON) (Ω)
RDS (ON) − ID
Common source
VDS = 20 V
Pulse test
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
Gate-source voltage VGS (V)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
Common source
VDS = 20 V
Pulse test
1
0.1
10
100
110
VGS = 10,15 V
2SK3301
2011-12-13
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0.1
0.01
0−0.2 −1.0 −0.4 −0.6 −0.8 −1.2
VGS = 0 V
3
10
1
10
1
0
0
200
300
500
6 108
100
400
24
100
200
VDS ≈ 400 V
0
8
12
20
4
16
VDS
VGS
Power dissipation PD (W)
Gate threshold voltage Vth (V)
Ambient temperature Ta (°C)
RDS(ON) – Ta
Drain-source on-resistance
RDS(ON) (Ω)
Drain-source voltage VDS (V)
IDR – VDS
Reverse drain current IDR (A)
Capacitance C (pF)
Ambient temperature Ta (°C)
Vth – Ta
Case temperature Tc (°C)
PD – Tc
Gate-source voltage VGS (V)
Total gate charge Qg (nC)
Dynamic input/output
characteristics
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
Capacitance – VDS
Common source
VDS = 10 V
ID = 1 mA
Pulse test
Common source
ID = 1 A
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
Common source
VGS = 10 V
Pulse test
Common source
VGS = 0 V
f=1MHz
Ta = 25°C
Pulse test
ID = 1 A 0.5
0
−80 −40 0 40 80 120 160
10
20
30
40
50
0.25
Ciss
Coss
Crss
0.1
100
10
1
1 10 100
1000
-80 -40 0
4
2
3
5
1
0
40 80 120 160
0
0 40 120 160 200
10
30
40
20
80
2SK3301
2011-12-13
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0.001
1
0.01
0.1
1
10
10 1000
100 μs *
1 ms *
VDSS
max
100
Safe operating area
Drain current ID (A)
Channel temperature (initial) Tch (°C)
EAS – Tch
Avalanche energy EAS (mJ)
rth – tw
Pulse width tw (s)
Normalized transient thermal impedance
rth/Rth(ch-c)
Drain-source voltage VDS (V)
DC operation
Tc = 25°C
ID max (pulsed) *
* Single pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
ID max (continuous)
Single pulse
−15 V
15 V
Test circuit Waveform
IAR
BVDSS
VDD V
DS
1
0.1
10
0.2
0.1
0.05
0.02
0.01
T
PDM
t
Duty = t/T
Rth(ch-c) = 6.25°C/W
Duty = 0.5
0.01
0
25
40
80
120
200
160
50 75 100 125 150
10 μ 100 μ 1 m 10 m 100 m 1 10
RG = 25 Ω, VDD = 90 V BVDSS
BVDSS − VDD
EAS = ・L・I2AR・
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2SK3301
2011-12-13
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RESTRICTIONS ON PRODUCT USE
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in this document, and related hardware, software and systems (collectively “Product”) without notice.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
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Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
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or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
