FIELD-EFFECT TRANSISTORS, SILICON. N CHANNEL 2N 4446 TRANSISTORS A EFFET DE CHAMP, SILICIUM. CANAL N 2N 4448 Switching Commutation Chopper \ 100 mA min. 2N 4446 Dcoupeur D . 100 mA min. 2N 4448 102 max. 2N 4446 "DS on 122 max. 2N 4448 Maximum power dissipation Case TO-18 See outline drawing CB-6 on last pages Dissipation de puissance maximale Bojtier Voir dessin cot CB-6 dernires pages Prot wy | 02 | N Bottom view * | \ Vue de dessous | | NX 072 NI a@Js | D 0,1 + MN j \ ! | Weight : 0,32 g. Gate is connected to case 0 50 100-160 Tomb C) Masse La grille est relie au boitier ABSOLUTE RATINGS (LIMITING VALUES) T =+25C (Untess otherwise stated} VALEURS LIMITES ABSOLUES D'UTILISATION amb {Sauf indications contraires} 2N 4446 2N 4448 Drain-source voltage Tension drain-source Vos 25 20 Vv Gate-source voltage Tension grille-source Vg Ss 25 ~20 Vv Gate-drain voltage Tension gritle-drain Veo 25 ~20 Vv Gate current Courant de grille \g 100 100 mA Power dissipation t = 25C Pp Dissipation de puissance amb tot 0,4 0,4 Ww Junction temperature . Temprature de jonction max. Tj 200 . 200 Storage temperature min. T 55 55 c Temprature de stockage max. stg +200 +200 75-46 1/7 BE rorsouse DMSON SEMICONDUCTEURS Sesesalmn 8192N 4446, 2N 4448 STATIC CHARACTERISTICS T = 25C (Unless otherwise stated) CARACTERISTIQUES STATIQUES amb {Sauf indications contraires} Test conditions i Conditions de mesure Min. Typ. Max. Veo = 15V 1o = 0 'gso ~3 nA bp = Van= 15V Gate current I GD =0 igpo0 3 nA Courant de grille Ss Veo =-15V Ig =0 levo 0,2 WA Tamb = 85C Total gate leakage current Vos =0 1 3 Courant de fuite total de grille Veg = -15V Gss - nA Gate-source breakdown voltage Vos = 0 Vv 2N 4446 |~25 Vv Tension de claquage grille-source Ig = 1HA (BR) GSS | on 4qag |20 Vv Vong = 5V DS l Vgg = -10V DSx 3 nA Drain cut-off current Courent rsiduel de drain Vos =5V Vgg = -10V psx 0,2 BA Tamb = 85C Drain current Vos = 15V * Courant de drain Vv oe = bss 100 mA Vang = 5V Gate-source cut-off voltage: Ds Tension grille-source de blocage 'p = 3nA VGs off 2 10 v * Pulsed ty $300 ps 652% Ampulsions 2/7 8202N 4446, 2N 4448 STATIC CHARACTERISTICS T =25C (Unless otherwise stated) CARACTERISTIQUES STATIQUES amb (Sauf indications contraires} Test conditions ; Conditions de mesure Min. Typ. Max. Drain-source saturation voltage Ves = 0 Vp 2N 4446 0,1 Vv Tension de saturation drain-source Ip = 10mA S sat 2N 4448 0,12 Vv On-state drain-source resistance Ves = 0 "DS on 2N 4446 10 Q Rsistance drain-source & l'tat passant Vos = 0,1 V 2N 4448 12 Q DYNAMIC CHARACTERISTICS (for small signals) CARACTERISTIQUES DYNAMIQUES {pour petits signaux} Vac = 0 On-state drain-source resistance \ Gs =0 tg 2N 4446 10 2 Rsistance drain-source a Itat passant dD is on 2N 4448 12 Q f = 1kHz ; . Vos = 0 nput capacitance =- Capacit dentre Ves = -10V Cy iss 50 pF f = 1MHz R transf it Vos = 9 everse transfer capacitance _ Capacit de transfert inverse Ves = -10V Crass 25 pF f = 1MHz SWITCHING CHARACTERISTICS CARACTERISTIQUES DE COMMUTATION Turn-on delay time Retard a le crolssance talon) 15 ns vod = id v Rise time GS on = t Temps de croissance Vesx = -10V r 20 ns Ip on *10mA renamed Turn-off time t Temps total de dcroissance off 35 ns 3/7 8212N 4446, 2N 4448 SWITCHING TIMES TESTS CIRCUITS SCHEMAS DE MESURES DES TEMPS DE COMMUTATION S RQ 1 uF jenerator Gnrateur f { v2 v1 + ml LY? VLSI Oscilloscope Zo = 502 v4 Oscilloscope t <1 ns Z, =502 ty Sins | | 502 (I. 50 2[ S\ ty 200 ns kQ, t, <0,4 ns f =100HzZ C, < 20 pF q te} ela | 2Q Yop 1 uP | I tb vid 0 Vv a 90 % Vegx =-10V 50% 10% v1 = YGSx 41 & t v2 4 tott ton aloft te aion) t =~ Vop 10% Ip on 10 mA In onX 25:2 | 90% oO Vv ee 4/7 8222N 4446, 2N 4448 STATIC CHARACTERISTICS CARACTERISTIQUES STATIQUES (mA) (ma) Veg=0 | 2N-4446 / yo V tp, 300 us 30 7 8 <2% 4 300 25 [ 20 200 / / 15 V/V -3V 10 / 100 Wy A La 3,6V i Q 0 0 5 10 15 Vogl) 0 100 200 300 400 500 Vogimv! | 2N 4446 (ma) Ves = / , tp < 300 us 30 5 <2% 7 Ce Wf -3 10 j 7 , 2 L--3,5V Y~ | 0 104 0 100 200 300 400 500 vpcimv) 0 1 2 3 Vgglv) 5/7 8232N 4446, 2N 4448 STATIC CHARACTERISTICS CARACTERISTIQUES STATIQUES 0 5 10 Vogl) lp (mA) | 2N 4448 yYcs =9 30 / 25 Ly Vv. 20 ] 7 15 / 7 7 2V. 10 4 V A L-2sv 5 7 0 3Y Q 100 200 300 400 500 600 Vpimv) (ma) | 2N 4448 30 vcs 9 25 pai / / 20 7 15 ] | v2 " Y/ y-2,5V s|f/ 3Y 100 200 300 400 600 vi cimv) 0 0 1 2 3 Vgslv) 6/7 8242N 4446, 2N 4448 DYNAMIC CHARACTERISTICS CARACTERISTIQUES DYNAMIQUES Cc, C1455 (pF) [Vgg =-10V {pF) f =1MHz 8 6 6 5 4 4 3 2 2 ___] 1,5 10" 10 0 5 10 Vps() 0 5 10 15 20 25-V,.tv) 0 64 2 3 4 VgglVl W7 825