http://www.fujielectric.com/products/semiconductor/ 2MBI1000VXB-170E-50 IGBT Modules IGBT MODULE (V series) 1700V / 1000A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Conditions Inverter Absolute Maximum Ratings (at Tc=25C unless otherwise specified) Ic Continuous Collector current Ic pulse -Ic -Ic pulse Collector power dissipation Pc Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg between terminal and copper base (*1) Viso Isolation voltage between thermistor and others (*2) Mounting Screw torque (*3) Main Terminals Sense Terminals Maximum ratings 1700 20 1400 1000 2000 1000 2000 6250 175 150 150 -40 ~ +150 Units V V AC : 1min. 4000 VAC M5 M8 M4 6.0 10.0 2.1 Nm 1ms Tc=25C Tc=100C 1ms 1 device A W C Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable Value : Mounting 3.0 ~ 6.0 Nm (M5) Recommendable Value : Main Terminals 8.0 ~ 10.0 Nm (M8) Recommendable Value : Sense Terminals1.8 ~ 2.1 Nm (M4) Electrical characteristics (at Tj= 25C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Inverter Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Thermistor Forward on voltage Symbols Conditions ICES IGES VGE (th) VCE (sat) (terminal) (*4) VGE = 0V, VCE = 1700V VCE = 0V, VGE = 20V VCE = 20V, IC = 1000mA VCE (sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) (*4) VF (chip) Reverse recovery time trr Resistance R B value B VGE = 15V IC = 1000A VCE = 10V, VGE = 0V, f = 1MHz Tj=25C Tj=125C Tj=150C Tj=25C Tj=125C Tj=150C VCC = 900V IC = 1000A VGE = 15V RG = +1.2/-1.8 VGE = 0V IF = 1000A IF = 1000A T=25C T=100C T=25/50C Tj=25C Tj=125C Tj=150C Tj=25C Tj=125C Tj=150C Characteristics min. typ. max. 6.0 1200 6.0 6.5 7.0 2.10 2.55 2.50 2.55 2.00 2.45 2.40 2.45 94 1.25 0.5 0.15 1.55 0.15 1.95 2.40 2.20 2.15 1.85 2.30 2.10 2.05 0.24 5000 465 495 520 3305 3375 3450 Units mA nA V V nF s V s K Note *1: Please refer to page 6 , there is definition of on-state voltage at terminal. Thermal resistance characteristics Items Symbols Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) (*5) Rth(c-f) Conditions Inverter IGBT Inverter FWD with Thermal Compound Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 Characteristics min. typ. max. 0.024 0.048 0.0083 - Units C/W 2MBI1000VXB-170E-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) [INVERTER] [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 150C / chip 2000 VGE=20V 1800 2000 15V Collector current: Ic [A] Collector current: Ic [A] 1600 1400 1200 10V 1000 800 600 400 8V 200 15V VGE= 20V 1800 12V 1600 12V 1400 1200 10V 1000 800 600 8V 400 200 0 0 0 1 2 3 4 0 5 1 2 3 4 5 Collector-Emitter voltage: VCE [V] Collector-Emitter voltage: VCE [V] [INVERTER] [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25C / chip 2000 10 Tj=25C 1600 125C Collector-Emitter Voltage: VCE [V] Collector Current: Ic [A] 1800 150C 1400 1200 1000 800 600 400 200 0 8 6 4 Ic=2000A Ic=1000A Ic=500A 2 0 0 1 2 3 4 5 5 10 Collector-Emitter Voltage: VCE [V] Collector-Emitter voltage: VCE [200V/div] Gate-Emitter voltage: VGE [5V/div] Gate Capacitance: Cies, Coes, Cres [nF] 1000 Cies Cres Coes 1 0 5 10 15 20 25 25 [INVERTER] Dynamic Gate Charge (typ.) Vcc=900V, Ic=1000A, Tj= 25C Gate Capacitance vs. Collector-Emitter Voltage (typ.) VGE= 0V, = 1MHz, Tj= 25C 10 20 Gate-Emitter Voltage: VGE [V] [INVERTER] 100 15 30 VGE VCE 0 Collector-Emitter voltage: VCE [V] 2000 4000 6000 8000 Gate charge: Qg [nC] 2 10000 12000 2MBI1000VXB-170E-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ [INVERTER] Switching time vs. Collector current (typ.) Vcc=900V, VGE=15V, RG=+1.2/-1.8, Tj=25C [INVERTER] Switching time vs. Collector current (typ.) Vcc=900V, VGE=15V, RG=+1.2/-1.8, Tj=125C, 150C 10000 Switching time: ton, tr, toff, tf [nsec] Switching time: ton, tr, toff, tf [nsec] 10000 toff ton 1000 tr tf 100 10 0 500 1000 1500 2000 toff ton 1000 tr tf 100 Tj=125oC Tj=150oC 10 2500 0 500 1000 Collector current: Ic [A] Switching loss: Eon, Eoff, Err [mJ/pulse] Switching time: ton, tr, toff, tf [nsec] toff tr tf 100 Tj=125oC Tj=150oC 10 0.1 1 900 Tj=125oC Tj=150oC 800 700 600 Eon Eoff 500 400 Err 300 200 100 0 10 0 500 Gate resistance: RG [] 1000 1500 2000 2500 Collector current: Ic [A] [INVERTER] Reverse bias safe operating area (max.) +VGE=15V, -VGE=15V, RG=+1.2/-1.8, Tj=150C [INVERTER] Switching loss vs. Gate resistance (typ.) Vcc=900V, Ic=1000A, VGE=15V, Tj=125C, 150C 2500 1200 Tj=125oC Tj=150oC 1000 Eon Collector current: Ic [A] Switching loss: Eon, Eoff, Err [mJ/pulse] 2500 [INVERTER] Switching loss vs. Collector current (typ.) Vcc=900V, VGE=15V, RG=+1.2/-1.8, Tj=125C, 150C 10000 ton 2000 Collector current: Ic [A] [INVERTER] Switching time vs. Gate resistance (typ.) Vcc=900V, Ic=1000A, VGE=15V, Tj=125C, 150C 1000 1500 800 600 Eoff 400 200 2000 1500 Notice) Please refer to page 6. There is definision of VCE. 1000 500 Err 0 0 0 1 10 0 Gate resistance: RG [] 500 1000 1500 Collector-Emitter voltage: VCE [V] 3 2000 2MBI1000VXB-170E-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ [INVERTER] [INVERTER] Reverse Recovery Characteristics (typ.) Vcc=900V, VGE=15V, RG=+1.2/-1.8, Tj=25C Forward Current vs. Forward Voltage (typ.) chip 10000 2000 1800 Forward current: IF [A] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Tj=25C 1600 1400 1200 1000 125C 800 600 400 150C 200 0 1000 Irr trr 100 10 0 1 2 3 0 4 [INVERTER] Reverse Recovery Characteristics (typ.) Vcc=900V, VGE=15V, RG=+1.2/-1.8, Tj=125C, 150C 1500 2000 2500 Transient Thermal Resistance (max.) 0.1 10000 Tj=125oC Tj=150oC FWD Thermal resistanse: Rth(j-c) [C/W] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] 1000 Forward current: IF [A] Forward on voltage: VF [V] Irr 1000 trr 100 10 0 500 1000 1500 2000 Temperature characteristic (typ.) 100 10 1 0.1 0 20 40 60 0.01 0.1 Pulse Width : Pw [sec] [THERMISTOR] -60 -40 -20 IGBT 0.01 0.001 0.001 2500 Forward current: IF [A] Resistance : R [k] 500 80 100 120 140 160 Temperature [C] 4 1 2MBI1000VXB-170E-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Outline Drawings, mm LABEL2 (Fuji internal control codes) * This label may be eliminated without notification. LABEL Equivalent Circuit Schematic [ Thermistor ] [ Inverter ] Main C1 Sense C1 G1 Main C2E1 Sense C2E1 G2 Sense E2 Main E2 5 TH1 TH2 2MBI1000VXB-170E-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Definition of on-state voltage at terminal and switching characteristics Main C1 G1 Main C2E1 VCE (terminal) of Upper arm Switching characteristics of VCE also is defined between Sense C1 and Sense C2E1 for Upper arm and Sense C2E1 and Sense E2 for Lower arm . Sense C2E1 G2 Main E2 Fuji defined VCE value of terminal by using Sense C1 and Sense C2E1 for Upper arm and Sense C2E1 and Sense E2 for Lower arm . Sense C1 Please use these terminals whenever measure spike voltage and on-state voltage . VCE (terminal) of Lower arm Sense E2 6 2MBI1000VXB-170E-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. * Computers * OA equipment * Communications equipment (terminal devices) * Measurement equipment * Machine tools * Audiovisual equipment * Electrical home appliances * Personal equipment * Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. * Transportation equipment (mounted on cars and ships) * Trunk communications equipment * Traffic-signal control equipment * Gas leakage detectors with an auto-shut-off feature * Emergency equipment for responding to disasters and anti-burglary devices * Safety devices * Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). * Space equipment * Aeronautic equipment * Nuclear control equipment * Submarine repeater equipment 7.Copyright (c)1996-2011 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 7