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http://www.fujielectric.com/products/semiconductor/
2MBI1000VXB-170E-50 IGBT Modules
IGBT MODULE (V series)
1700V / 1000A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specied)
Items Symbols Conditions Maximum ratings Units
Inverter
Collector-Emitter voltage VCES 1700 V
Gate-Emitter voltage VGES ±20 V
Collector current
Ic Continuous Tc=25°C 1400
A
Tc=100°C 1000
Ic pulse 1ms 2000
-Ic 1000
-Ic pulse 1ms 2000
Collector power dissipation Pc 1 device 6250 W
Junction temperature Tj 175
°C
Operating junction temperature (under switching conditions)
Tjop 150
Case temperature TC150
Storage temperature Tstg -40 ~ +150
Isolation voltage
between terminal and copper base (*1)
Viso AC : 1min. 4000 VAC
between thermistor and others (*2)
Screw torque (*3)
Mounting
-
M5 6.0
N m
Main Terminals M8 10.0
Sense Terminals M4 2.1
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable Value : Mounting 3.0 ~ 6.0 Nm (M5) Recommendable Value : Main Terminals 8.0 ~ 10.0 Nm (M8)
Recommendable Value : Sense Terminals 1.8 ~ 2.1 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specied)
Items Symbols Conditions Characteristics Units
min. typ. max.
Inverter
Zero gate voltage collector current ICES VGE = 0V, VCE = 1700V - - 6.0 mA
Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 1200 nA
Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 1000mA 6.0 6.5 7.0 V
Collector-Emitter saturation voltage
VCE (sat)
(terminal)
(*4) VGE = 15V
IC = 1000A
Tj=25°C - 2.10 2.55
V
Tj=125°C - 2.50 -
Tj=150°C - 2.55 -
VCE (sat)
(chip)
Tj=25°C - 2.00 2.45
Tj=125°C - 2.40 -
Tj=150°C - 2.45 -
Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 94 - nF
Turn-on time
ton VCC = 900V
IC = 1000A
VGE = ±15V
RG = +1.2/-1.8Ω
- 1.25 -
µs
tr - 0.5 -
tr (i) - 0.15 -
Turn-off time toff - 1.55 -
tf - 0.15 -
Forward on voltage
VF
(terminal)
(*4) VGE = 0V
IF = 1000A
Tj=25°C - 1.95 2.40
V
Tj=125°C - 2.20 -
Tj=150°C - 2.15 -
VF
(chip)
Tj=25°C - 1.85 2.30
Tj=125°C - 2.10 -
Tj=150°C - 2.05 -
Reverse recovery time trr IF = 1000A - 0.24 - µs
Thermistor
Resistance RT=25°C - 5000 - Ω
T=100°C 465 495 520
B value B T=25/50°C 3305 3375 3450 K
Note *1: Please refer to page 6 , there is denition of on-state voltage at terminal.
Thermal resistance characteristics
Items Symbols Conditions Characteristics Units
min. typ. max.
Thermal resistance (1device) Rth(j-c) Inverter IGBT - - 0.024
°C/W
Inverter FWD - - 0.048
Contact thermal resistance (1device) (*5) Rth(c-f) with Thermal Compound - 0.0083 -
Note *5: This is the value which is dened mounting on the additional cooling n with thermal compound.
2
IGBT Modules
2MBI1000VXB-170E-50
http://www.fujielectric.com/products/semiconductor/
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Characteristics (Representative)
[INVERTER]
Dynamic Gate Charge (typ.)
Vcc=900V, Ic=1000A, Tj= 25°C
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
Gate Capacitance vs. Collector-Emitter Voltage (typ.)
VGE= 0V, ƒ= 1MHz, Tj= 25°C
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
VGE= 15V / chip
[INVERTER]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C / chip
[INVERTER]
[INVERTER][INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
1
10
100
1000
0 10 20 305
Collector-Emitter voltage: VCE [V]
Gate Capacitance: Cies, Coes, Cres [nF]
Cies
Cres
Coes
0
200
400
600
800
1000
1200
1400
1600
1800
2000
012345
Collector-Emitter voltage: VCE [V]
Collector current: Ic [A]
VGE=20V 15V
12V
10V
8V
0
200
400
600
800
1000
1200
1400
1600
1800
2000
012345
Collector-Emitter voltage: VCE [V]
Collector current: Ic [A]
VGE= 20V
12V
15V
10V
8V
0
200
400
600
800
1000
1200
1400
1600
1800
2000
012345
Collector-Emitter Voltage: VCE [V]
Collector Current: Ic [A]
125°C
Tj=25°C
150°C
0
2
4
6
8
10
5 10 15 20 25
Gate-Emitter Voltage: VGE [V]
Collector-Emitter Voltage: VCE [V]
Ic=2000A
Ic=1000A
Ic=500A
0 2000 4000 6000 8000 10000 12000
Gate charge: Qg [nC]
Collector-Emitter voltage: VCE [200V/div]
Gate-Emitter voltage: VGE [5V/div]
VCE
VGE
15 25
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IGBT Modules
2MBI1000VXB-170E-50
http://www.fujielectric.com/products/semiconductor/
[INVERTER]
[INVERTER]
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=1000A, VGE=±15V, Tj=125°C, 150°C
Switching loss vs. Collector current (typ.)
Vcc=900V, VGE=±15V, RG=+1.2/-1.8Ω, Tj=125°C, 150°C
[INVERTER]
Reverse bias safe operating area (max.)
Vcc=900V, VGE=±15V, RG=+1.2/-1.8Ω, Tj=125°C, 150°C
Switching time vs. Collector current (typ.)
[INVERTER]
[INVERTER][INVERTER]
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, RG=+1.2/-1.8Ω, Tj=25°C
+VGE=15V, -VGE=15V, RG=+1.2/-1.8Ω, Tj=150°CVcc=900V, Ic=1000A, VGE=±15V, Tj=125°C, 150°C
Switching loss vs. Gate resistance (typ.)
10
100
1000
10000
0 500 1000 1500 2000 2500
Collector current: Ic [A]
Switching time: ton, tr, toff, tf [nsec]
tf
tr
toff
ton
10
100
1000
10000
0 500 1000 1500 2000 2500
Collector current: Ic [A]
Switching time: ton, tr, toff, tf [nsec]
tf
tr
toff
ton
Tj=125oC
Tj=150oC
10
100
1000
10000
0111.0
Gate resistance: RG [Ω]
Switching time: ton, tr, toff, tf [nsec]
tf
tr
toff
ton
Tj=125oC
Tj=150oC
0
100
200
300
400
500
600
700
800
900
0 500 1000 1500 2000 2500
Collector current: Ic [A]
Switching loss: Eon, Eoff, Err [mJ/pulse]
Eon
Eoff
Err
Tj=125oC
Tj=150oC
0
200
400
600
800
1000
1200
0110
Gate resistance: RG [Ω]
Switching loss: Eon, Eoff, Err [mJ/pulse]
Eoff
Err
Eon
Tj=125oC
Tj=150oC
0
500
1000
1500
2000
2500
0 500 1000 1500 2000
Collector-Emitter voltage: VCE [V]
Collector current: Ic [A]
Notice)
Please refer to page 6.
There is definision of VCE.
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IGBT Modules
2MBI1000VXB-170E-50
http://www.fujielectric.com/products/semiconductor/
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Reverse Recovery Characteristics (typ.)
Vcc=900V, VGE=±15V, RG=+1.2/-1.8Ω, Tj=125°C, 150°C
[THERMISTOR]
[INVERTER]
]RETREVNI[]RETREVNI[
Transient Thermal Resistance (max.)
Forward Current vs. Forward Voltage (typ.)
chip
Reverse Recovery Characteristics (typ.)
Vcc=900V, VGE=±15V, RG=+1.2/-1.8Ω, Tj=25°C
Temperature characteristic (typ.)
Forward on voltage: VF [V]
Forward current: IF [A]
10
100
1000
10000
0 500 1000 1500 2000 2500
Forward current: IF [A]
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
Irr
trr
0.001
0.01
0.1
0.001 0.01 0.1 1
Pulse Width : Pw [sec]
Thermal resistanse: Rth(j-c) [°C/W]
IGBT
FWD
0.1
1
10
100
-60 -40 -20 0 20 40 60 80 100 120 140 160
Temperature [°C]
Resistance : R [kΩ]
10
100
1000
10000
0 500 1000 1500 2000 2500
Forward current: IF [A]
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
Irr
trr
Tj=125oC
Tj=150oC
0
200
400
600
800
1000
1200
1400
1600
1800
2000
01234
125°C
Tj=25°C
150°C
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IGBT Modules
2MBI1000VXB-170E-50
http://www.fujielectric.com/products/semiconductor/
LABEL2 (Fuji internal control codes)
* This label may be eliminated without notification.
LABEL
[ Inverter ]
Main C1
Main E2
Main C2E1
G1
Sense C1
Sense C2E1
G2
Sense E2
[ Thermistor ]
TH1
TH2
Outline Drawings, mm
Equivalent Circuit Schematic
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IGBT Modules
2MBI1000VXB-170E-50
http://www.fujielectric.com/products/semiconductor/
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Denition of on-state voltage at terminal and switching characteristics
Main C1
Main E2
Main C2E1
G1
Sense C1
Sense C2E1
G2
Sense E2
VCE (terminal)
of Upper arm
VCE (terminal)
of Lower arm
Fuji defined VCE value of terminal by using
Sense C1 and Sense C2E1 for Upper arm and
Sense C2E1 and Sense E2 for Lower arm .
Switching characteristics of VCE also is defined
between Sense C1 and Sense C2E1 for Upper arm and
Sense C2E1 and Sense E2 for Lower arm .
Please use these terminals whenever
measure spike voltage and on-state voltage .
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IGBT Modules
2MBI1000VXB-170E-50
http://www.fujielectric.com/products/semiconductor/
WARNING
1. This Catalog contains the product specications, characteristics, data, materials, and structures as of May 2011.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specications.
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