© 2008 IXYS All rights reserved 1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VUO 190
20080227a
IdAV = 248 A
VRRM = 800-1800 V
Symbol Test Conditions Maximum Ratings
IdAV TC = 90°C, module 248 A
IdAV TA = 35°C (RthCA = 0.2 K/W), module 165 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 2800 A
VR = 0 t = 8.3 ms (60 Hz), sine 3300 A
TVJ = TVJM t = 10 ms (50 Hz), sine 2500 A
VR = 0 t = 8.3 ms (60 Hz), sine 2750 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 39 200 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 45 000 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 31 200 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 31 300 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL ≤ 1 mA t = 1 s 3000 V~
MdMounting torque (M6) 5 ± 15 % Nm
Terminal connection torque (M6) 5 ± 15 % Nm
Weight typ. 270 g
Dimensions in mm (1 mm = 0.0394")
Features
●Package with screw terminals
●Isolation voltage 3000 V~
●Planar passivated chips
●Blocking voltage up to 1800 V
●Low forward voltage drop
●UL registered E72873
Applications
●Supplies for DC power equipment
●Input rectifiers for PWM inverter
●Battery DC power supplies
●Field supply for DC motors
Advantages
●Easy to mount with two screws
●Space and weight savings
●Improved temperature and power
cycling
VRSM VRRM Type
VV
800 800 VUO 190-08NO7
1200 1200 VUO 190-12NO7
1400 1400 VUO 190-14NO7
1600 1600 VUO 190-16NO7
1800 1800 VUO 190-18NO7*
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
Symbol Test Conditions Characteristic Values
IRVR = VRRM;T
VJ = 25°C≤0.3 mA
VR = VRRM;T
VJ = TVJM ≤5mA
VFIF= 300 A; TVJ = 25°C≤1.43 V
VT0 For power-loss calculations only 0.8 V
rT2.2 mΩ
RthJC per diode, 120°0.45 K/W
per module 0.075 K/W
RthJH per diode, 120°0.6 K/W
per module 0.1 K/W
dSCreeping distance on surface 10 mm
dACreepage distance in air 9.4 mm
aMax. allowable acceleration 50 m/s2
Three Phase
Rectifier Bridge
~
~
~
–
+
* delivery time on request
M
6
x
1
2
7
330
27
6.5
6.5
C~ D~ E~
A+ B-
54
15
12 25
66
26 26
72
80
94
4
5
6
3
1
2
7
M6
~
~
~
+-
http://store.iiic.cc/
© 2008 IXYS All rights reserved 2 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VUO 190
20080227a
0.001 0.01 0.1 1
0
500
1000
1500
2000
2500
3000
23456789110
104
105
0.0 0.5 1.0 1.5
0
50
100
150
200
250
300
0 40 80 120 160 200 240
0
200
400
600
0 20 40 60 80 100 120 140
0.001 0.01 0.1 1 10
0.0
0.1
0.2
0.3
0.4
0.5
I2t
IFSM
IF
A
VFt
s
t
ms
Ptot
W
Id(AV)M
A
Tamb
t
s
K/W
A2s
0 20 40 60 80 100 120 140
0
40
80
120
160
200
240
280
Id(AV)M
TC
A
V
A
°C °C
VUO 190
TVJ = 45°C
50Hz, 80% VRRM VR = 0 V
Fig. 4 Forward current versus voltage
drop per diode
Fig. 5 Surge overload current Fig. 6 I2t versus time per diode
Fig. 7 Power dissipation versus direct output current and ambient temperature Fig. 8 Max. forward current versus
case temperature
Fig. 9 Transient thermal impedance junction to case
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.013 0.0012
2 0.072 0.047
3 0.175 0.326
4 0.19 2.03
RthHA :
0.1 K/W
0.2 K/W
0.5 K/W
1.0 K/W
1.5 K/W
2.0 K/W
3.0 K/W
TVJ = 150°C
TVJ = 45°C
TVJ=150°C
TVJ= 25°C
TVJ = 150°C
ZthJC
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