V
RRM
= 20 V - 100 V
I
F
= 300 A
Features
• High Surge Capability Twin Tower Package
• Types up to 100 V V
RR
M
Parameter Symbol MBR30045CT (R) MBR30060CT (R) Unit
Repetitive peak reverse
V
45
60
V
Silicon Power
Schottk
y
Diode
MBR30045CT thru MBR300100CTR
MBR300100CT (R
)
80
MBR30080CT (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
100
voltage
V
RRM
45
60
V
RMS reverse voltage V
RMS
32 42 V
DC blocking voltage V
DC
45 60 V
Continuous forward
current I
F
300 300 A
Operating temperature T
j
-40 to 175 -40 to 175 °C
Storage temperature T
stg
-40 to 175 -40 to 175 °C
Parameter Symbol MBR30045CT (R) MBR30060CT (R) Unit
Diode forward voltage 0.65 0.75
88
200 200
Thermal characteristics
Thermal resistance,
junction - case R
thJC
0.4 0.4 °C/W
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive
forward current, Half
Sine Wave
I
F,SM
Reverse current I
R
V
F
200
A2500
V
R
= 20 V, T
j
= 25 °C
I
F
= 150 A, T
j
= 25 °C
T
C
≤ 140 °C
Conditions
80
56
2500 2500
-40 to 175
300 300
2500
-40 to 175
MBR300100CT (R
)
88
MBR30080CT (R)
0.4
V
R
= 20 V, T
j
= 125 °C
0.4
0.84 0.84
200 mA
V
-40 to 175 -40 to 175
T
C
= 25 °C, t
p
= 8.3 m
s
100
70
10080
www.genesicsemi.com 1
MBR30045CT thru MBR300100CTR
www.genesicsemi.com 2
