MBR30045CT thru MBR300100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 300 A Features * High Surge Capability * Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Symbol Conditions MBR30045CT (R) MBR30060CT (R) MBR30080CT (R) MBR300100CT (R) Unit VRRM 45 60 80 100 V VRMS 32 42 56 70 V VDC 45 60 80 100 V 300 300 300 300 A 2500 2500 2500 2500 A -40 to 175 -40 to 175 -40 to 175 -40 to 175 -40 to 175 -40 to 175 -40 to 175 -40 to 175 C C IF TC 140 C Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 C, tp = 8.3 ms Operating temperature Storage temperature Tj Tstg Electrical characteristics, at Tj = 25 C, unless otherwise specified Symbol Conditions Diode forward voltage VF Reverse current IR IF = 150 A, Tj = 25 C VR = 20 V, Tj = 25 C VR = 20 V, Tj = 125 C Parameter MBR30045CT (R) MBR30060CT (R) MBR30080CT (R) MBR300100CT (R) Unit 0.65 8 200 0.75 8 200 0.84 8 200 0.84 8 200 0.4 0.4 0.4 0.4 V mA Thermal characteristics Thermal resistance, junction - case www.genesicsemi.com RthJC 1 C/W MBR30045CT thru MBR300100CTR www.genesicsemi.com 2