HE8807SG/FL
GaAlAs Infrared Emitting Diodes
ADE-208-998 (Z)
1st Edition
Dec. 2000
Description
The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of
880 nm.
Features
• High output, high efficiency
• Narrow spectral width
• Sharp radiation directivity (HE8807FL)
• Wide radiation directivity (HE8807SG)
• High reliability
Package Type
• HE8807SG: SG1
1
Internal Circuit
• HE8807FL: FL
2
HE8807SG/FL
2
Absolute Maximum Ratings (TC = 25°C)
Item Symbol Value Unit
Forward current IF200 mA
Reverse voltage VR3V
Operating temperature Topr –20 to +85 °C
Storage temperature Tstg –40 to +100 °C
Optical and Electrical Characteristics (TC = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Optical output power HE8807SG PO10 20 — mW IF = 150 mA
HE8807FL Pf * 0.5 1.0 — IF = 20 mA
Peak wavelength λp 800 880 900 nm IF = 150 mA
Spectral width ∆λ — 30 — nm IF = 150 mA
Forward voltage VF— 1.7 2.3 V IF = 150 mA
Reverse current IR— — 100 µAV
R
= 3 V
Capacitance Ct — 10 — pF VR = 0 V, f = 1 MHz
Rise time tr— 20 — ns IF = 50 mA
Fall time tf— 20 — ns IF = 50 mA
Note: Pf specification: The optical output within 9 degrees of the acceptance angle.
HE8807SG/FL
3
Typical Characteristic Curves
25
20
15
10
5
050 100 150 200
60°C
Optical output power, PO (mW)
Forward current, IF (mA)
Optical Output Power vs. Forward Current
(HE8807SG)
T
C
= −20°C
80°C
0°C
25°C
40°C
Forward voltage, VF (V)
0 1.0 2.0
50
100
200
Forward current, IF (mA)
0.5 1.5 2.5
150 TC = 60°C
25°C−20°C
Forward Current vs. Forward Voltage
0
20
40
60
Wavelength, λ (nm)
Relative radiation intensity (%)
−40 −20 λp2040
80
100 Wavelength Distribution
Relative intensity
10 ns/div.
Current pulse
Optical pulse
Pulse Response
TC = 25°C
TC = 25°C
HE8807SG/FL
4
Typical Characteristic Curves (cont)
0 20406080
0
20
40
60
80
100
20406080100 Relative radiation intensity (%) Angle, θ (deg.)
Relative radiation intensity (%)
Radiation Directional (HE8807SG)
30
0
60
90
Angle, θ (deg.)
0 20406080
0
20
40
60
80
100
20406080100 Relative radiation intensity (%) Angle, θ (deg.)
Relative radiation intensity (%)
Radiation Directional (HE8807FL)
30 0
60
90
Angle, θ (deg.)
TC = 25°C
T
C = 25°C
HE8807SG/FL
5
Typical Characteristic Curves (cont)
100
50
20
10 1 2 5 10 20 50 100
Relative optical output power (%)
Distance, L (mm)
D.U.T.
L
Photo detector
T
Relative Optical Output Power vs. Distance
FL
TC = 25°C
HE8807SG/FL
6
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
IR/SG1
—
—
0.25 g
Unit: mm
2.54 ± 0.35
(2 – 1.05)
φ
1.0 ± 0.2
1.0 ± 0.2
45° ± 5°
φ
5.4 ± 0.2
φ
4.65 ± 0.2
φ
4.0 ± 0.2
2 – 0.45 ± 0.1
φ
0.65 ± 0.2
2.7 ± 0.2
0.55 ± 0.2
14 ± 2
12
HE8807SG/FL
7
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
IR/FL
—
—
0.27 g
Unit: mm
2
1
5.4 ± 0.2
4.65 ± 0.1
2 – 0.45 ± 0.1
2.54 ± 0.35
14 ± 2 6.0 ± 0.3
4.5 ± 0.2
(0.4)
1.0 ± 0.2
1.0 ± 0.2
45°± 5°
φ
φ
φ
HE8807SG/FL
8
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The
laser beam shall be observed or adjusted through infrared camera or equivalent.
HE8807SG/FL
9
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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