wa -THOMSON Sf Ses THOMSON 2N6053 2N6055 COMPLEMENTARY POWER DARLINGTON DESCRIPTION The 2N6053 is a silicon epitaxial base PNP transis- tor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are inten- ded for use in power linear and switching applica- tions. The complementary NPN type is the 2N6055. TO-3 INTERNAL SCHEMATIC DIAGRAM c c 8 B NPN PNP E ABSOLUTE MAXIMUM RATINGS Value Symbol Parameter PNP 2N6053 Unit NPN 2N6055 Vcoso | Collector-base Voltage (le = 0) 60 Vv Vceo | Collector-emitter Voltage (Ip = 0) 60 Vv Vepo | Emitter-base Voltage (Ic = 0) 5 Vv le Collector Current 8 A low Collector Peak Current 16 A le Base Current 120 mA Prot Total Dissipation at T, < 25C 100 Ww Tstg Storage Temperature - 65 to 200 C Tj Max. Operating Junction Temperature 200 C For PNP type voltage and current values are negative. February 1989 V2 11392N6053/55 THERMAL DATA [ Rinj-case | Thermal Resistance Junction-case max 1.75 CiW | ELECTRICAL CHARACTERISTICS (T,.;. = 25C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit Icex Collector Cutoff Current Vee =6O0V Veg =- 1.5V 500 HA Vee =60V Vee =- 1.5V T, = 150C 5 mA lcEo Collector Cutoff Current Vee = 30V 0.5 mA (lg = 9) leBo Emitter Cutoff Current Veg =5V 2 mA {Io = 9) Vceoisus}"| Collector-emitter Ip = 100mA 60 Vv Sustaining Voltage Vee(sat)| Collector-emitter le = 4A lg = 16mA 2 Vv saturation Voltage Io =8A tg =80mA 3 Vv VeeE(sat).| Base-emitter Saturation Ic =8A tg = 80mA 4 Vv Voltage Vee on) | Base-emitter Voltage lo =4A Vee =3V 2.8 Vv Nee DC Current Gain lo =4A Vce =3V 750 18K Io =8A Vee =3V 100 fy Transition Frequency Io =3A Voce =3V f = 1MHz 4 MHz Cobo Collector-base Vcop = 10V Ie =0 f = 1MHz Capacitance for NPN Type 200 pF for PNP Type 300 pF * Pulsed : pulse duration = 300us, duty cycle = 1.5%. For PNP type voltage and current values are negative. 2/2 1140 i SGS-THOMSON YF imcrosecrromes