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®
FN9037.1
IS-2100ARH
Radiation Hardened High Frequency
Half Bridge Driver
The Radiation Hardened IS-2100ARH is a high frequency,
130V Half Bridge N-Channel MOSFET Driver IC, which is
functionally similar to industry standard 2110 types. The low-
side and high-side gate drivers are independently controlled.
This gives the user maximum flexibility in dead-time
selection and driver protocol.
In addition, the device has on-chip error detection and
correction circuitry, which monitors the state of the h igh-si de
latch and compares it to the HIN signal. If they disagree, a
set or reset pulse is generated to correct the high-side latch.
This feature protects the high-side latch from single event
upsets (SEUs).
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for the IS-2100ARH are
contained in SMD 5962-99536 . A “hotlink” is provided
on our website for downloading.
Features
• Electrically Screened to DSCC SMD # 5962-99536
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Maximum Total Dose . . . . . . . . . . . . . . . . . 300krad(SI)
- DI RSG Process Provides Latch-up Immunity
- SEU Rating. . . . . . . . . . . . . . . . . . . . . . 82MeV/mg/cm2
- Vertical Device Architecture Reduces Sensitivity to Low
Dose Rates
• Bootstrap Supply Max Voltage to 150V
• Drives 1000pF Load at 1MHz with Rise and Fall Times of
30ns (Typ)
• 1.5A (Typ) Peak Output Current
• Independent Inputs for Non-Half Bridge Topologies
• Low DC Power Consumption. . . . . . . . . . . . . 60mW (Typ)
• Operates with VDD = VCC Over 12V to 20V Range
• Low-side Supply Undervoltage Protection
Applications
• High Frequency Switch-Mode Power Supplies
• Drivers for Inductive Loads
• DC Motor Drivers
Pinout IS-2100ARH
FLATPACK (CDFP4-F16)
TOP VIEW
Ordering Information
ORDERING NUMBER INTERSIL MKT.
NUMBER TEMP.
RANGE (oC)
5962F9953602VXC IS9-2100ARH-Q -55 to 125
5962F9953602QXC IS9-2100ARH-8 -55 to 125
IS9-2100ARH/Proto IS9-2100ARH/Proto -55 to 125
LO
COM
VCC
NC
NC
VS
VB
HO
2
3
4
5
6
7
8
116
15
14
13
12
11
10
9
NC
VSS
LIN
SD
HIN
VDD
NC
NC
Data Sheet April 2003
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 |Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
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All Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.
Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable.
However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its
use. No license is gran t ed by impli catio n or other wise u nder an y pat ent or pat ent ri gh ts of I nter sil or it s subsidia rie s.
For information regarding Intersil Corporation and its products, see www.intersil.com
Die Characteristics
DIE DIMENSIONS:
4820µm x 3300µm (190 mils x 130 mils)
Thickness: 483µm ±25.4µm (19 mils ±1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0kÅ ±1.0kÅ
Top Metallization:
Type: ALSiCu
Thickness: 16.0kÅ ±2kÅ
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 105 A/cm2
Transistor Count:
542
Metallization Mask Layout IS-2100ARH
SD (13)
LIN (14)
VSS (15)
COM (2)
VCC (3)
HIN (12)
VDD (11)
HO (8)
VB (7)
VS (6)
LO (1)
IS-2100ARH
