1$2076A Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator Features * Low capacitance. (C=3.0pF max) Short reverse recovery time. (tr =8.0ns max) * High reliability with glass seal. Outline SS . . \ Cathode band Ordering Information Type No. Cathode band Package Code > pathode 182076A Navy Blue DO-35 Absolute Maximum Ratings (Ta = 25C) Item Symbol Value Unit Peak reverse voltage Vam 70 Vv Reverse voitage Va 60 Vv Peak forward current lem 450 mA Non-Repetitive peak forward surge current lesa 1 A Average forward current lo 150 mA Power dissipation Py 250 mw Junction temperature Tj 175 C Storage temperature T stg -65 to +175 C * Within 1s forward surge current. Electrical Characteristics (Ta = 25C) ltem Symbo! Min Typ Max Unit Test Condition Forward voltage Ve 0.64 _ 0.80 V Ie = 10 mA Reverse current Ip _ 0.1 HA Vp = 30 V Capacitance Cc _ 3.0 pF Va =1V,f=1MHz Reverse recovery time tr * _ _ 8.0 ns ip=lq=10mA, |,;=1mA * Reverse recovery time test circuit Ro 500 | Pulse Generator 3kQ Trigger Sampling in 50Q Oscilloscope Rin =60 91182076A 10 Ta=125C = z u 10 =x Ta=75C $ s 3 3 z 2 = 10 $ 2 i Ta=25C 10 0 O02 04 O06 O8 10 12 0 20 40 60 80 =. 100 Forward voltage Ve (V} Reverse voltage Vp_ (V) Fig.1 Forward current Vs. Fig.2 Reverse current Vs. Forward voltage Reverse voltage Capacitance C (pF) 1.0 10 107 Reverse voltage Vp (V) Fig.3 Capacitance Vs. Reverse voltage 92