BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. http://onsemi.com Features MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT * High Current: IC = -1.0 A * The SOT-223 Package Can Be Soldered Using Wave or Reflow. * SOT-223 package ensures level mounting, resulting in improved * * * * thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. NPN Complement is BCP68 AEC-Q101 Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Value Unit Collector-Emitter Voltage VCEO -20 Vdc Collector-Base Voltage VCBO -25 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC -1.0 Adc Total Power Dissipation @ TA = 25C (Note 1) Derate above 25C PD 1.5 12 W mW/C TJ, Tstg -65 to 150 C Symbol Max Unit RqJA 83.3 C/W TL 260 C 10 s Rating Operating and Storage Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance - Junction-to-Ambient (Surface Mounted) Lead Temperature for Soldering, 0.0625 in from case Time in Solder Bath Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. (c) Semiconductor Components Industries, LLC, 2011 November, 2011 - Rev. 11 1 MARKING DIAGRAM 4 1 2 AYW CEG G 3 SOT-223 (TO-261) CASE 318E STYLE 1 CE A Y W G = Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package (*Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping BCP69T1G SOT-223 (Pb-Free) 1000 / Tape & Reel NSVBCP69T1G SOT-223 (Pb-Free) 1000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BCP69T1/D BCP69T1G, NSVBCP69T1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = -100 mAdc, IE = 0) V(BR)CES -25 - - Vdc Collector-Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) V(BR)CEO -20 - - Vdc Emitter-Base Breakdown Voltage (IE = -10 mAdc, IC = 0) V(BR)EBO -5.0 - - Vdc Collector-Base Cutoff Current (VCB = - 25 Vdc, IE = 0) ICBO - - -10 mAdc Emitter-Base Cutoff Current (VEB = - 5.0 Vdc, IC = 0) IEBO - - -10 mAdc 50 85 60 - - - - 375 - Characteristics OFF CHARACTERISTICS ON CHARACTERISTICS hFE DC Current Gain (IC = - 5.0 mAdc, VCE = -10 Vdc) (IC = - 500 mAdc, VCE = -1.0 Vdc) (IC = -1.0 Adc, VCE = -1.0 Vdc) - Collector-Emitter Saturation Voltage (IC = -1.0 Adc, IB = -100 mAdc) VCE(sat) - - -0.5 Vdc Base-Emitter On Voltage (IC = -1.0 Adc, VCE = -1.0 Vdc) VBE(on) - - -1.0 Vdc fT - 60 - MHz DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = -10 mAdc, VCE = - 5.0 Vdc) TYPICAL ELECTRICAL CHARACTERISTICS f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) hFE, DC CURRENT GAIN 400 VCE = 1 V 150C 300 200 100 0 25C -55C 0.001 0.01 0.1 1 10 300 200 100 VCE = -10 V TJ = 25C f = 30 MHz 70 50 30 -10 IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain -100 IC, COLLECTOR CURRENT (mA) Figure 2. Current Gain Bandwidth Product http://onsemi.com 2 -1000 BCP69T1G, NSVBCP69T1G TYPICAL ELECTRICAL CHARACTERISTICS 1.4 0.30 IC/IB = 10 IC/IB = 10 150C 0.25 0.20 25C 0.15 0.10 -55C 0.05 0 0.001 0.01 0.1 VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.35 1.2 1.0 -55C 0.8 150C 0.4 0.2 1 25C 0.6 0.001 IC, COLLECTOR CURRENT (A) 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 3. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE-EMITTER VOLTAGE (V) 0.01 Figure 4. Base Emitter Saturation Voltage vs. Collector Current 1.2 VCE = 1 V 1.1 1.0 0.9 0.8 0.7 -55C 25C 0.6 0.5 0.4 0.3 0.2 150C 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 5. Base Emitter Voltage vs. Collector Current 160 10 10 ms IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) TJ = 25C 120 80 Cib 40 1s Cob Cib -5.0 -1.0 -1.0 -2.0 -1.5 -3.0 -2.0 -4.0 Thermal Limit 0.1 Single Pulse Test @ TA = 25C 0.01 0.1 -2.5 -5.0 1 ms 1.0 Cob 0 100 ms VR, REVERSE VOLTAGE (VOLTS) 1.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 7. Safe Operating Area Figure 6. Capacitances http://onsemi.com 3 100 BCP69T1G, NSVBCP69T1G PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE N D b1 4 HE E 1 2 3 b e1 e 0.08 (0003) A1 C q A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM A 1.50 1.63 1.75 0.060 0.064 A1 0.02 0.06 0.10 0.001 0.002 b 0.60 0.75 0.89 0.024 0.030 b1 2.90 3.06 3.20 0.115 0.121 c 0.24 0.29 0.35 0.009 0.012 D 6.30 6.50 6.70 0.249 0.256 E 3.30 3.50 3.70 0.130 0.138 e 2.20 2.30 2.40 0.087 0.091 e1 0.85 0.94 1.05 0.033 0.037 L 0.20 --- --- 0.008 --- L1 1.50 1.75 2.00 0.060 0.069 HE 6.70 7.00 7.30 0.264 0.276 0 10 0 - - q STYLE 1: PIN 1. 2. 3. 4. L1 MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 --- 0.078 0.287 10 BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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