PD - 94355 IRFR420A IRFU420A SMPS MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High speed power switching HEXFET(R) Power MOSFET l VDSS RDS(on) max ID 3.0 3.3A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective COSS specified (See AN 1001) l D-Pak IRFR420A I-Pak IRFU420A Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. Units 3.3 2.1 10 83 0.67 30 3.4 -55 to + 150 A W W/C V V/ns 300 (1.6mm from case ) Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units --- --- --- 140 2.5 5.0 mJ A mJ Typ. Max. Units --- 0.50 --- 1.5 --- 62 C/W Thermal Resistance Parameter RJC RCS RJA www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient 1 12/10/01 IRFR420A/IRFU420A Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 500 --- --- 2.0 --- --- --- --- Typ. --- 0.60 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 3.0 VGS = 10V, ID = 1.5A 4.5 V VDS = VGS, ID = 250A 25 VDS = 500V, VGS = 0V A 250 VDS = 400V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 1.4 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 8.1 12 16 13 340 53 2.7 490 15 28 Max. Units Conditions --- S VDS = 50V, ID = 1.5A 17 ID = 2.5A 4.3 nC VDS = 400V 8.5 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 2.5A ns --- RG = 21 --- RD = 97,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, V DS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, VDS = 0V to 400V Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 3.3 showing the A G integral reverse --- --- 10 S p-n junction diode. --- --- 1.6 V TJ = 25C, IS = 2.5A, VGS = 0V --- 330 500 ns TJ = 25C, I F = 2.5A --- 760 1140 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 45mH RG = 25, IAS = 2.5A. (See Figure 12) Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS ISD 2.5A, di/dt 270A/s, VDD V(BR)DSS, TJ 150C 2 www.irf.com IRFR420A/IRFU420A 10 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1 TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 0.1 4.5V 20s PULSE WIDTH T = 25 C J 0.01 0.1 1 10 1 4.5V 20s PULSE WIDTH T = 150 C J 0.1 1 100 3.0 TJ = 150 C 1 TJ = 25 C 0.1 V DS = 50V 20s PULSE WIDTH 6.0 7.0 8.0 Fig 3. Typical Transfer Characteristics www.irf.com 9.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 10 5.0 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics VGS , Gate-to-Source Voltage (V) 10 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 0.01 4.0 ID = 2.5A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFR420A/IRFU420A VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 1000 Ciss 100 Coss 10 20 VGS , Gate-to-Source Voltage (V) 10000 ID = 2.5A VDS = 400V VDS = 250V VDS = 100V 15 10 5 FOR TEST CIRCUIT SEE FIGURE 13 Crss 0 1 1 10 100 0 1000 4 8 12 16 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 OPERATION IN THIS AREA LIMITED BY R TJ = 150 C I D , Drain Current (A) ISD , Reverse Drain Current (A) DS(on) 1 TJ = 25 C 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1.2 10us 10 100us 1 0.1 1ms 10ms TC = 25 C TJ = 150 C Single Pulse 10 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFR420A/IRFU420A 5.0 RD VDS VGS 4.0 D.U.T. RG + ID , Drain Current (A) -VDD 3.0 10V Pulse Width 1 s Duty Factor 0.1 % 2.0 Fig 10a. Switching Time Test Circuit VDS 1.0 90% 0.0 25 50 75 100 TC , Case Temperature 125 150 ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 P DM 0.1 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 0.01 t1/ t 2 J = P DM x Z thJC +T C 0.1 1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR420A/IRFU420A D .U .T RG + V - DD IA S 20V 0 .0 1 tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp A EAS , Single Pulse Avalanche Energy (mJ) D R IV E R L VDS 300 1 5V TOP 250 BOTTOM ID 1.1A 1.6A 2.5A 200 150 100 50 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGD 700 VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F V DSav , Avalanche Voltage ( V ) QGS 650 600 .3F D.U.T. + V - DS 550 0.0 0.5 1.0 1.5 2.0 2.5 IAV , Avalanche Current ( A) VGS 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current www.irf.com IRFR420A/IRFU420A Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * * * * RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET Power MOSFETs www.irf.com 7 IRFR420A/IRFU420A D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5 0 ) 1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) -A 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 4 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) 1.0 2 (.0 4 0 ) 1.6 4 (.0 2 5 ) 1 2 1 0 .4 2 (.4 1 0 ) 9 .4 0 (.3 7 0 ) L E A D A S S IG N M E N T S 1 - GATE 3 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 4 - D R A IN 3X 2X 1 .1 4 (.0 4 5 ) 0 .7 6 (.0 3 0 ) 2 - D R A IN 3 - S OU R CE 0 .5 1 (.0 2 0 ) M IN . -B 0 .8 9 (.0 3 5 ) 0 .6 4 (.0 2 5 ) 0 .2 5 ( .0 1 0 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) M A M B N O TE S : 2 .2 8 ( .0 9 0 ) 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 4 .5 7 ( .1 8 0 ) 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0 .1 6 (.0 0 6 ) . D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 1999 IN T HE AS SEMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO 916A 12 ASSEMBLY LOT CODE 8 IRFU120 34 DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A www.irf.com IRFR420A/IRFU420A I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.26 5 ) 6 .3 5 (.25 0 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) -A - 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) L E A D A S S IG N M E N T S 4 1 - G A TE 2 - D R A IN 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 1 2 3 -B 2.2 8 (.0 9 0) 1.9 1 (.0 7 5) 3X 1 .1 4 (.0 45 ) 0 .7 6 (.0 30 ) 2 .2 8 (.0 9 0 ) 3 - S OUR C E 4 - D R A IN 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5 M , 19 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U TL IN E T O -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X . + 0 .1 6 (.0 0 6 ). 9 .6 5 (.3 8 0 ) 8 .8 9 (.3 5 0 ) 3X 1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .8 9 ( .0 3 5 ) 0 .6 4 ( .0 2 5 ) 0 .2 5 (.0 1 0 ) M A M B 2X 0 .58 (.0 2 3 ) 0 .46 (.0 1 8 ) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H ASSEMBLY LOT CODE 5678 ASSEMBLED ON WW 19, 1999 IN T HE ASSEMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO IRFU120 919A 56 78 DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A ASSEMBLY LOT CODE www.irf.com 9 IRFR420A/IRFU420A D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16 .3 ( .641 ) 15 .7 ( .619 ) 12 .1 ( .4 7 6 ) 11 .9 ( .4 6 9 ) F E E D D IR E C T IO N TR L 16 .3 ( .64 1 ) 15 .7 ( .61 9 ) 8.1 ( .3 18 ) 7.9 ( .3 12 ) F E E D D IR E C T IO N NO TES : 1. C O N T R O LL IN G D IM E N S IO N : M ILL IM E T E R . 2. A LL D IM E N S IO N S A R E S H O W N IN M IL LIM E T E R S ( IN C H E S ). 3. O U T LIN E C O N F O R M S T O E IA -4 81 & E IA -54 1. 1 3 IN C H 16 mm NO TES : 1. O U T L IN E C O N F O R M S T O E IA -48 1. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/01 10 www.irf.com