V
RRM
= 400 V - 600 V
I
F
= 25 A
Features
• High Surge Capability DO-4 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol MUR2540 (R) Unit
Repetitive peak reverse
voltage V
RRM
400 V
RMS reverse voltage V
RMS
280 V
Silicon Super Fast
Recover
y
Diode
MUR2560 (R)
600
420
• Types from 400 V to 600 V V
RRM
2. Reverse polarity (R): Stud is anode.
MUR2540 thru MUR2560R
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
DC blocking voltage V
DC
400 V
Continuous forward current I
F
25 A
Operating temperature T
j
-55 to 150 °C
Storage temperature T
stg
-55 to 150 °C
Parameter Symbol MUR2540 (R) Unit
Diode forward voltage 1.3
10 μA
3mA
Recovery Time
Maximum reverse recovery
time T
RR
75 ns
600
25
500
-55 to 150
-55 to 150
1.7
MUR2560 (R)
Reverse current I
R
V
F
A
V
R
= 50 V, T
j
= 25 °C
I
F
= 25 A, T
j
= 25 °C
T
C
≤ 145 °C
Conditions
500
T
C
= 25 °C, t
p
= 8.3 ms
10
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
V
R
= 50 V, T
j
= 125 °C
V
3
90
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MUR2540 thru MUR2560R
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Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
MUR2540 thru MUR2560R
DO- 4 (DO-203AA)
J
G
F
A
E
D
P
N
B
C
M
Inches Millimeters
Min Max Min Max
A 10-32 UNF
B 0.424 0.437 10.77 11.10
C ----- 0.505 ----- 12.82
D ------ 0.800 ----- 20.30
E 0.453 0.492 11.50 12.50
F 0.114 0.140 2.90 3.50
G ----- 0.405 ----- 10.29
J ----- 0.216 ----- 5.50
M ----- φ0.302 ----- φ7.68
N 0.031 0.045 0.80 1.15
P 0.070 0.79 1.80 2.00
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