SMBTA14/MMBTA14 NPN Silicon Darlington Transistor * High collector current 2 3 * Low collector-emitter saturation voltage 1 * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking SMBTA14/MMBTA14 s1N Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCES 30 Collector-base voltage VCBO 30 Emitter-base voltage VEBO 10 Collector current IC 300 Peak collector current, tp 10 ms ICM 500 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 330 mW Junction temperature Tj 150 C Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value Unit V mA TS 81 C -65 ... 150 Value 210 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2011-12-19 SMBTA14/MMBTA14 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-base breakdown voltage V(BR)CBO 30 - - V(BR)CES 30 - - V(BR)EBO 10 - - Unit V IC = 10 A, IE = 0 Collector-emitter breakdown voltage IC = 10 A, VBE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current A ICBO VCB = 30 V, IE = 0 - - 0.1 VCB = 30 V, IE = 0 , TA = 150 C - - 10 - - 100 Emitter-base cutoff current IEBO nA VEB = 10 V, IC = 0 DC current gain1) - hFE IC = 10 mA, VCE = 5 V 10000 - - IC = 100 mA, VCE = 5 V 20000 - - VCEsat - - 1.5 VBEsat - - 2 125 - - MHz - 3 - pF Collector-emitter saturation voltage1) V IC = 100 mA, IB = 0.1 mA Base emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA AC Characteristics Transition frequency fT IC = 50 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance Ccb VCB = 10 V, f = 100 MHz 1Pulse test: t < 300s; D < 2% 2 2011-12-19 SMBTA14/MMBTA14 DC current gain hFE = (IC) VCE = 5 V 10 6 h FE Collector-emitter saturation voltage IC = (VCEsat ), hFE = 1000 SMBTA 13/14 EHP00829 5 C EHP00826 mA 125 C 10 5 SMBTA 13/14 10 3 150 C 25 C -50 C 10 2 25 C 5 5 -55 C 10 4 10 1 5 5 10 3 10 -1 10 0 10 1 10 2 mA 10 10 0 3 0 0.5 1.0 V C V CEsat Collector cutoff current ICBO = (TA) VCBO = 30 V Base-emitter saturation voltage IC = (VBEsat), hFE = 1000 10 3 SMBTA 13/14 1.5 EHP00827 10 mA 4 SMBTA 13/14 EHP00828 nA C CB0 150 C 25 C -50 C 10 2 max 10 3 5 5 typ 10 2 5 10 1 10 1 5 5 10 0 0 1.0 2.0 V 10 0 3.0 V BEsat 0 50 100 C 150 TA 3 2011-12-19 SMBTA14/MMBTA14 Transition frequency fT = (IC) VCE = 5 V, f = 200 MHz 10 3 MHz Emitter-base capacitance Ceb = (VEB) EHP00825 19 pF 5 CCB/CEB fT SMBTA 13/14 Collector-base capacitance Ccb = (VCB) 15 13 11 10 2 CEB 9 5 7 5 CCB 3 10 1 10 0 5 10 1 5 10 2 mA 1 0 10 3 4 8 12 16 22 VCB/VEB C Total power dissipation P tot = (TS) V Permissible Pulse Load RthJS = (tp) 10 3 360 mW K/W 300 10 2 RthJS Ptot 270 240 210 10 1 180 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 150 120 10 0 90 60 30 0 0 15 30 45 60 75 90 105 120 C TS 10 -1 -6 10 150 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2011-12-19 SMBTA14/MMBTA14 Permissible Pulse Load Ptotmax/PtotDC = (tp ) 10 3 SMBTA 13/14 Ptot max 5 Ptot DC EHP00824 tp D= T tp T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2011-12-19 Package SOT23 SMBTA14/MMBTA14 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 0.1 1 2.4 0.15 3 0.1 MAX. 10 MAX. B 1 0.1 10 MAX. 2.9 0.1 0.15 MIN. Package Outline A 5 0...8 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 6 2011-12-19 SMBTA14/MMBTA14 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2011-12-19