2011-12-19
1
SMBTA14/MMBTA14
1
2
3
NPN Silicon Darlington Transistor
• High collector current
• Low collector-emitter saturation voltage
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type Marking Pin Configuration Package
SMBTA14/MMBTA14 s1N 1=B 2=E 3=C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCES 30 V
Collector-base voltage VCBO 30
Emitter-base voltage VEBO 10
Collector current IC300 mA
Peak collector current, tp ≤ 10 ms ICM 500
Base current IB100
Peak base current IBM 200
Total power dissipation-
TS ≤ 81 °C
Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 210 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2011-12-19
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SMBTA14/MMBTA14
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 30 - - V
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
V(BR)CES 30 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 10 - -
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
10
µA
Emitter-base cutoff current
VEB = 10 V, IC = 0
IEBO - - 100 nA
DC current gain1)
IC = 10 mA, VCE = 5 V
IC = 100 mA, VCE = 5 V
hFE
10000
20000
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
VCEsat - - 1.5 V
Base emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
VBEsat - - 2
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz
fT125 - - MHz
Collector-base capacitance
VCB = 10 V, f = 100 MHz
Ccb - 3 - pF
1Pulse test: t < 300µs; D < 2%
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SMBTA14/MMBTA14
DC current gain hFE = ƒ(IC)
VCE = 5 V
10
EHP00829SMBTA 13/14
-1 3
10mA
3
10
6
10
5
5
100101
104
C
FE
h
Ι
2
10
5
10 ˚C
125
5
25
˚C
-55
˚C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 1000
0
10
EHP00826SMBTA 13/14
CEsat
V
1.5
0
3
10
Ι
C
mA
0.5 1.0
1
10
2
10
˚C
V
5
5
150
25
˚C
-50
˚C
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 1000
0
10
EHP00827SMBTA 13/14
BEsat
V
3.0
0
3
10
Ι
C
mA
1.0 2.0
1
10
2
10
˚C
V
5
5
150
25
˚C
-50
˚C
Collector cutoff current ICBO = ƒ(TA)
VCBO = 30 V
10
10
10
0 50 100 150
SMBTA 13/14 EHP00828
TA
Ι
CB0
˚C
10
10
4
3
2
1
0
5
5
5
max
typ
nA
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SMBTA14/MMBTA14
Transition frequency fT = ƒ(IC)
VCE = 5 V, f = 200 MHz
10
EHP00825SMBTA 13/14
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
fMHz
Ι
55
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB/VEB
1
3
5
7
9
11
13
15
pF
19
CCB/CEB
CCB
CEB
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
210
240
270
300
mW
360
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
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SMBTA14/MMBTA14
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10
EHP00824SMBTA 13/14
-6
0
10
5
D
=
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tp
=
DT
tp
T
totmax
tot
P
DC
P
p
t
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SMBTA14/MMBTA14
Package SOT23
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
EH
s
BCW66
Type code
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25
M
BC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
Manufacturer
2005, June
Date code (YM)
2011-12-19
7
SMBTA14/MMBTA14
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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