C138,9 The General Electric C138 and C139 Series of Silicon Controlled Rectifiers are reverse blocking triode thyristor semiconductor devices designed primarily for high-frequency power switching applications which require blocking voltages from 500 to 800 volts and load currents up to 35 amperes RMS, at frequencies up to 25 kHz. Refer to C140 and C141 series for blocking voltages from 100 to 400 volts, The C138, C139 family of inverter SCRs utilizes a new voltage rating system which, for the first time allows high voltage blocking capability with the short turn-off time characteristics of a low blocking voltage SCR. Equipment designers can use the C138 and C139 SCRs in demanding applications such as: choppers, inverters, regulated power supplies, cycloconverters, ultrasonic generators, high frequency lighting, sonar transmitters, radar transmitters, and induction heaters, MAXIMUM ALLOWABLE RATINGS Repetitive Peak Off. - Peak or DC. Repetitive Peak Non-Rep: Peak State Voltage, Vom | Switching Voltage Reverse Voltage = Reverse Voltage oe (2)(3), Te ==65C to | Voy or Vo (2)(3) Varm (2)3)To= | Vasu 24) To= Type (1) +125C.. Tg =65C to H2SC ~65Cto F125C. 65C to H2SC C139E10E, C139E20E 500 Volts 500 Volts 500 Volts 600 Volts C138E10E, C138E20E 500 500 50 - C139M10M, C139M20M 600 600 600 720 C138M10M, C138M20M 600 600 50 - C139S10M, C139S20M 700 600 600 720 C138S10M, C138S20M 700 600 50 ~ C139N10M, C139N20M 800 600 600 720 C138NL0M, C138N20M 800 600 50 - RMS On-State Current, Iy(RMms) ee ee ee ee ee eh ee et eee ee ee ee 35 Amperes (all conduction angles) Critical Rate-of-Rise of On-State Current, difat: (5) Gate triggered operation: Switching from 500 volts (500 volt types) . 2. 6 ee we ee ee eh ee we we ee 100 Amperes per microsecond Switching from 600 volts (600, 700, 800 volt types} 2. 6 6 6 1 we ee we we ee ee et 100 Amperes per microsecond Peak One Cycle Surge (non-rep) On-State Current,Izgyy se 6 eee ee et te te ee ee ee ee we ee 200 Amperes Peak Rectangular Pulse Surge (non-rep) On-State Current (5.0 Msec, tp=SQusec) lygyy se ee ee ee et ee te et 180 Amperes 12t (for fusing), for times 20.5 milliseconds .. 2... ee ee ee tt ee ee wee eee ee ww ws 165 Ampere2 seconds Peak Gate Power Dissipation, Pgyw...... we ee 40 Watts for 100 Microseconds Average Gate Power Dissipation, Pg (Av) + + + 6 eee ee ee es es ee 1.0 Watts Peak Reverse Gate Voltage, Vqny + 2 0 8 te ee ee te eh te ee ee ee we we he ee ee 10 Volts Storage Temperature, TgTG. .-- e e ees a 65T to +150C Operating Temperature, Tj; ........-.- Cw et we hh eh ee we ee ee 65T to +125T Maximum Stud Torque. 2. 6 wee ee ee ee ee ee we he ee ee 30 Lb-in (35 Kg-cm) 775[ 138, 9 | CHARACTERISTICS : Test Symbol Min. Max. Units Test Conditions Peak Off-State IpRM Te = 65C to +125C Current (2)(6) C139E10E, CL39E20E - 4.7 mA Vorm = 500 Volts Peak C138E10E, C138E20E - 4.7 500 C139M10M, C139M20M - 4.0 600 C138M10M, C138M20M - 4.0 600 C139S810M, C139S20M - 4.0 700 C138S10M, C138S20M - 4.0 700 C139N10M, C139N20M - 4.0 800 C138N10M, C138N20M = 4.0 800 Peak Reverse To = 65C to +125C Current (2)(6) IRRu C139E10E, C139E20E - 8.5 mA Varro = 500 Volts Peak C138E10E, C138E20E = 75 $0. C139M10M, C139M20M - 75 600 C138M10M, C138M20M _ 715 50 C139S10M, C139S20M - 75 600 C138S10M, C138S20M - 75 50 C139N10M, C139N20M - 7.5 600 C138N10M, C138N20M - 75 50 Critical Rate of Rise of 200 Volts/ Te = 125C, Rated Vp rm, Gate Open Off-State Voltage dv/dt ~ Usec Circuited, Exponential Waveform D.C, Gate Ie6t - 180 mAdc Tc = 25C, Vp = 6Vde, Ry = 4 ohms Trigger Current 500 Te = -65C, Vp = 6Vde, RL = 2 ohms D.C, Gate Vot - 3.0 Vde Te = 25C, Vp = 6 Volts, RL = 4 ohms Trigger Voltage 4.5 Te = 65C, Vp = 6 Volts, Ry = 2 ohms 0.25 Te = 125C, Rated Vp rm, Ri = 500 ohms Peak On-State Vm - 4,0 Volts Te = 25C, Ipny = 100 A Peak, 2 1, 2 msec, Voltage wide pulse. Duty cycle $ 2%. Holding Current In mAdc Anode Source Voltage = 24 Vdc Peak Initiating On-State Current = 3A, 0.1 to 10 - 150 msec pulse, Tc = 25C, Gate source = LOV, Open Circuit, 20 ohms, 100 psec pulse = 350 Tc = 65C, Gate source = 20V, Open Circuit, 20 ohms, 100 usec pulse. Pulse Circuit tg Te = 115C, Ip = 100A Peak Approximate- Commutated Turn-Off (pulse) ly Sinusoidal Current Waveform, See Chart Time for time references, On-State Current Pulse Time to peak (tgt4) = 1.0 usec, On-State C138 - 10, C139 - 10, - 10 Usec Current Pulse Base (t3gt7) = 2.0 usec Types (+0.50 psec),.Repetition Rate = 400 PPS. PRV (ts) = 250 Volts max, Reverse voltage C138 - 20, C139 - 20, - 20 Usec (tg): C138 (with inv. para, diode) = 1 Volt. Types C139 = 30 Volts, Peak Off-State Voltage (tg) = Rated Vorwm.- Peak Off-State Voltage (to) equals: 500 Volts for 500 Volt types; 600 Volts for 600, 700 and 800 Volt types. Rate of Rise of Re-applied Off-State Voltage (Linear Ramp): (tg to tg) = 200 Volts per psec. Gate Trigger Pulse = 20 Volts, 20 ohms, Gate Trigger Pulse Width (90% points) = 1.5 usec, Gate Trigger Pulse Rise Time (10% to 90%) = 0.1 psec, Gate Bias during Turn-Off time interval = 0 Volts, 20 ohms, 776CHARACTERISTICS (Contd) Test Symbol Min. Max. Units Test Conditions Steady State Thermal R6sc - 1.0 C/Watt Junction to Case Resistance Conventional Circuit tg Te = 125, I+nq = 10A Peak Rectangular Commutated Tum-Off Current Puise, 50 psec duration, DI/DT < Time 10 Amps per microsecond, Commutation Rate S 5A per usec, PRV = Rated Vary C138 -10-, C139-10-, 10 Usec Volts max. Reverse Voltage at end of Types Turn-Off Time interval: C139 = 15 volts, C138 (with inv. para, diode) = 1 volt. Repetition Rate = 60 PPS, Rate of Rise of C138- 20. , C139-20-, 20 psec Re-applied Off-State Voltage (dv/dt) = 200V/ Types usec, Off-State Voltage = Rated Von ry Volts. Gate Bias during Turn-Off Time interval = 0 Volts, 100 ohms, NOTES: (1) Type designations are defined as follows, using C139S20M as an example: Cc 139 20 M Rated Switching Voltage Maximum Turn-Off Time (10 = 10psec; 20 = 20 psec.) Rated Repetitive Peak Off-State Voltage C138 and C139 types differ in reverse voltage rating only. (2) Values apply for gate terminal open circuited. (Negative gate bias is permissible), (3) Maximum case to ambient thermal resistance for which maximum voltage ratings apply equals 1.2C degrees per watt for Vp (DC voltage), 3.0C degrees per watt for Vor and Varm. See paragraph, Basis for Voltage Rating for further information. (4) Half sine wave voltage pulse, 10 millisecond max. duration. (5) di/dt rating is established in accordance with JEDEC Suggested Standard No. 7, Section 5.1.2.4 Off State (blocking) voltage capability may be temporarily lost immediately after each current pulse for duration less than the period of the applied pulse repetition rate. The pulse repetition rate for this test is 400 H,. The duration of the JEDEC di/dt test condition is 5.0 seconds (minimum), Required gate drive = 20 volts, open circuit, 20 ohm source, 0,1 microsecond rise time, 1.5 microsecond pulse width, Repetitive di/dt capability is incorporated into peak current rating charts included in this specification sheet. (6) Maximum case to ambient thermal resistance for which maximum Vpry and Varm fatings apply equals 3.0 degrees C per watt. See paragraph entitled Basis of Voltage Ratings, for further information. PRELIMINARY DATA These ratings and characteristics are not necessarily definitive and are based only on the tests and findings made to date, Inasmuch as further information may be acquired, General Electric Company reserves the right to change these preliminary data without notice. Please contact your local General Electric Electronic Component Sales Manager for the latest status of data prior to ordering devices to the limits indicated by the data, 777BASIS OF VOLTAGE RATINGS For The C139 and C138 Thyristors The C139 and C138 thyristors are characterized primarily for inverter service. The voltage ratings, off-state current and reverse current values for the C139 are based on the voltage waveform shown below: NON O000 o90 ttt OF F- STATE VOLTAGE oO REVERSE VOLTAGE Ow oo ran 0 |}+ONE CYCLE OF APPLIED VOLTAGE | 75 {PERMISSIBLE SWITCHING VOLTAGE LEVELS PER CENT 100 @ OF CYCLE (1O0Hz TO 25KHz) This waveform requires the use of a device case to ambient thermal resistance of 3.0 deg C per watt in order to assure thermal stability under maximum rated voltage and temperature conditions, The waveforms of the actual application must stay within the envelope shown for each voltage type. If the actual waveforms do not stay within the envelopes shown for each voltage type then a heat sink with less than 3,0 deg C per watt must be used. Consult factory for assistance in heat sink selection to assure thermal stability. The C138 type thyristor has a rated PRV of 50 volts, It is intended for use in applications where an inverse parallel rectifier diode (sometimes called a feedback diode) is connected across the C138 which will limit the applied reverse voltage to the forward drop of the inverse parallel diode. Therefore in the waveform envelopes shown above for the C139 the reverse voltage portion does not apply for the C138. For the C138 it is permissible for the off-state voltage at the switching voltage level to be extended from 50% to 95% of the total cycle time. NOTES: 1. cr > ON OW . Ext. Complete threads to extend to within 2% threads of seating plane. Diameter of unthreaded portion .249 (6.32MM) Maxi- mum, .220 (5.59MM) Minimum. . Angular orientation of these terminals is undefined. - 4-28 UNF-2A. Maximum pitch diameter of plated threads shall be basic pitch diameter .2268 (5.76MM), minimum pitch diam- eter .2225 (5.66MM), reference: screw thread standards for Fed- eral Service 1957, Handbook H28, 1957, Pl. . A chamfer (or undercut) on one or both ends of hexagonal por- tions is optional. . Case is anode connection. . Large terminal is cathode con- nection. . Small terminal is gate connec- tion. . Insulating kit available upon re- quest. . %-28 steel nut, Ni. plated, .178 min. thk. tooth lockwasher, steel, Ni. plated, .023 min. thk. OUTLINE DRAWING (COMPLIES WITH JEDEC TO-48) SEE NOTES 3485 $t, | ha i SEE NOTES b, [>5 2 86 {1 Se arini - $M SEATING PLANE dks N -e A # be Jy ja 778 INCHES MILLIAAE TERS SYMBOL | MIN. MAX.] MIN. MAX. | NOTES A . 330 505 8.38 | 12.83 @b 115 .140 2.92 3.56 2 ob | .210 .300 5.33 7 62 2 oD 544 13.82 E 544 -562 | 13.82 | 14.27 F 113 .200 2.87 5 .08 4 Fy .060 1.52 J T.193 30.30 Jy 875 22.23 I 120 3.05 oM t N 422 .453 {10.72 | 11.51 ot .060 .075 1.52 1.91 ory -125 .165 3.18 4.19 Ww 3 y| WZ ot SEE NOTES 2a7Charts 1, 2 and 3 give the maximum value of peak on-state current at which the specified turn-off-time and dv/dt still apply. PEAK ON-STATE CURRENT-AMPERES PEAK ON-STATE CURRENT~AMPERES PEAK ON-STATE CURRENT - AMPERES SINE WAVE DATA S\. NOTES: 1, MAXIMUM CASE TEMPERATURE = 65C 2. FOR SINUSOIDAL CURRENT WAVEFORM ONLY 3. MINIMUM CIRCUIT TURN-OFF TIME C139_10 , CI38_t0 *104SEC C139_20, CI3B_20 =20~SEC 4. MAXIMUM CIRCUIT dv /at= 200 V/nSEC S.RATED Vony -RATED SWITCHING VOLTAGE 6.REVERSE VOLTAGE Vaw * 250 VOLTS {C139}, 50 VOLTS (C138) Va_ 30 VOLTS (C139), 1 VOLT (C136 WITH INVERSE PARALLELDIODE) T.REQUIRED GATE DRIVE 20 VOLTS OPEN CIRCUIT, 20 OHM SOURCE (.S5mSEC MIN. PULSE WIDTH O.le SEC MAX. RISE TIME PULSE BASE WIDTH ~- MICROSECONDS Te *90 1. Maximum allowable peak on-state current vs. pulse width (Tc = 65C) NOTES: .MAXIMUM CASE TEMPERATURE 90C FOR SINUSOIDAL CURRENT WAVEFORM ONLY - MINIMUM CIRCUIT TURN-OFF TIME CI39_10, CI38_10 =10y SEC C139_20 , C138_20 w2onseC .MAXIMUM CIRCUIT dv/dt 200 V. LRATED Vom, RATED SWITCHING VOLTAGE . REVERSE VOLTAGE Van" 250 VOLTS (6139), SOVOLTS (C138) Va SOVOLTS (C139), 1 VOLT (CI38 WITH INVERSE PARALLEL DIODE) - REQUIRED GATE DRIVE 20 VOLTS OPEN CIRCUIT, 20 OHM SOURCE 15SEC MIN, PULSE WIDTH O.1uSEC MAX. RISE TIME PULSE BASE WIDTH -MICROSECONDS 2. Maximum aliowable peak on-state current vs. pulse width (Tc = 90C) Te #l5C NOTES: [\__/\ 1, MAXIMUM CASE TEMPERATURE 1//5*C 2.FOR SINUSOIDAL CURRENT WAVEFORM ONLY 3. MINIMUM CIRCUIT TURN-OFF TIME !0, Cl38_10 =l0uSEC 1392 =20 | CI3820 +20 SEC 4, MAXIMUM CIRCUIT dv/dt#=200V /u SEC 5. RATED Vora ,RATEO SWITCHING VOLTAGE 6. REVERSE VOLTAGE Vam=250 VOLTS (C139), 50 VOLTS (C138) Vn" 30 VOLTS (139),] VOLT (C136 WITH INVERSE PARALLEL 7. REQUIRED GATE DRIVE 20 VOLTS OPEN CIRCUIT, 20 OHM SOURCE 1.54SEC MIN. PULSE WIDTH Ol SEC MAX. RISE TIME PULSE BASE WIDTH ~ MICROSECONDS: 3. Maximum allowable peak on-state current vs. pulse width (Tc 779 = 115C)[ c138, 9 | INSTANTANEOUS ON-STATE CURRENT - AMPERES ANODE VOLTAGE ANODE CURRENT PEAK ON-STATE CURRENT-AMPERES NOTES: I. USE FOR CALCULATING APPROXIMATE AVERAGE POWER DISSIPATION FOR NON . . . SINUSOIDAL CURRENT WAVEFORMS. This chart gives the instantaneous power 2.CASE TO AMBIENT THERMAL RESISTANCE dissipated within the SCR as a function of REQUIREMENTS FOR THERMAL STABILITY i MUST BE MET. SEE PARAGRAPH ENTITLED time from start of current flow and the " BASIS OF VOLTAGE RATINGS" FOR instantaneous value of on-state anode cur- 1000 FURTHER INFORMATION. rent. Used as follows, this chart yields average dissipation information for any anode current wave-shapes: 400 ~~ 1, Plot the anode current waveform on \ this chart. 200 s0ow ay 2. On linear paper, replot instantaneous LA 400 W _~ on-state power dissipation versus time, 100 The area under the curve gives watt Y 200w seconds of energy dissipated per anode / toow current pulse, 40 i 3. Multiply the energy by the repetition 1, SOW rate to give average power dissipation. 40 W 20 20w 105 | 2 4 lo 40 100 1000 10,000 TIME FROM START OF CURRENT FLOW-SEC 4, Instantaneous On-State Power Dissipation ' ~YorM w - SWITCHING VOLTAGE iz n ' ae we S96 w | ae iG & ~VRM 2 t c ' lem tq(PULSE) be L __- J (tz -tz) SUPPLY | : Fo UMAR DUT. v & 2R un SUPPLY 3 =: | opt 8% INVERSE, PARALLEL (ODE a CURRENT y VOLTAGE = (For C138 TYPES) & TIME GROUND a OSCILLOSCOPE 1 fo t, te tytet, tety te CONNECTIONS 5, Waveforms For Pulse Turn-Off Time Test lO 20 40 NOTES: 2. 3. 100 200 400 AVERAGE POWER DISSIPATION = ENERGY PER PULSE X RER RATE CONDITIONS STATED ON SINUSOIDAL CURRENT RATING CHARTS APPLY. CASE TO AMBIENT THERMAL RESISTANCE REQUIREMENTS FOR THERMAL STABILITY MUST BE MET. SEE PARAGRAPH ENTITLED "BASIS OF VOLTAGE RATINGS" 1000 2M 4M IOM 40M 100M PULSE BASE WIDTH - MICROSECONDS 7. Energy Per Pulse For Sinusoidal Pulses 780 6. Pulse Turn-Off Time Basic Test Circuit This chart provides a rapid means of determining anode dissipation with half-sine-wave pulses, Multi- ply the energy per pulse by the repetition rate to obtain average anode dissipation,LOW di/dt RATE DATA C138, 9 26 24 g an Boe C138_20, CI39_ 20 wi ve ot 20 This chart gives the guaranteed maximum 25 2 turn-off time of the C138 and C139 as a z z \4] TEST LIMITS C138_10, CI39_I10 function of the on-state current, The use of -& | { + this chart is necessary for rectangular anode Ze a | | current pulses of the specified pulse width 2 9 12 NOTES: and frequency, ze |. RECTANGULAR CURRENT PULSES, 50 of MICROSECOND MINIMUM DURATION. > 10 2.SEE CHARACTERISTIC TABLE FOR s OTHER TEST CONDITIONS. 8 8 & 9716 20. 30. 40 50 60. YO. 80. 90. 100 110 8. Maximum Conventional Circuit-Commutated PEAK ON-STATE CURRENT -AMPERES Turn-Off Time vs Peak On-State Current igo NOTES: | APPLIES FOR ANODE CURRENT RATE OF RISE OF IO AMPS 2 160 PER MICROSECOND. b 2. MAXIMUM CIRCUIT dv/dt= 200 VOLTS PER pSEC. x 3. SEECHART 8 FOR APPLICABLE TURN-OFF TIME LIMIT. F 140 4. RATINGS DERIVED FOR lO WATT AVERAGE GATE = POWER DISSIPATION. w 5. CASE TO AMBIENT THERMAL RESISTANCE. REQUIREMENTS s '20 FOR THERMAL STABILITY MUST BE MET. SEE PARAGRAPH WwW ENTITLED "BASIS OF VOLTAGE RATINGS." ee & 100 SN ENN 80 J Lio, This chart is used when the SCR is carrying a N\ rectangular current with no significant turn- = \ \ . lt j- on switching duty. 3 60 Z 2. a \ eS T <x Zz a = % DUTY CYCLE= = ~ .. 5 40 a, t x100 & SNS x 4 fa = 20 %, 03-7030 0 OOO BO 90 100 110 20 130~=Cs&. Maximum Allowable Case Temperature For PEAK ON-STATE CURRENT~AMPERES Rectangular Current Waveform 160 NOTES: |. JUNCTION TEMPERATURE = 125C. 140 2.APPLIES FOR ANODE CURRENT RATE OF RISE OF IO AMPERES PER MICROSECOND. 2 3.RATED AVERAGE GATE POWER DISSIPATION AND - 120 BLOCKING LOSSES INCLUDED. z = 2 ] This chart provides a rapid means of deter- 2 100 _ mining SCR dissipation with low values of < di/dt. B 80 a a , a _T t w "| % DUTY CYCLE S22 60 at T J 2 ; < 40 e ivy) Ln > * | yg ior 20 0 10. Average Power Dissipation For Rectangular 0 10 20 30 40 50 60 70 80 90 100 No Current Waveform PEAK ON-STATE CURRENT-AMPERES 781C138, 9 INSTANTANEOUS ON-STATE CURRENT -AMPERES 1000 800 600 400 200 100 80 60 40 20 JUNCTION TEMP =25C 125C NOTE APPLIES FOR CURRENT WAVEFORM WITH RISE TIME, ZERO TO PEAK,2 |00pSEC. 25C Ff p2sec 2 4 6 8 10 l2 INSTANTANEOUS ON-STATE VOLTAGE -VOLTS 11. Maximum On-State Characteristics 782