PD - 97069 IRF7853PbF HEXFET(R) Power MOSFET Applications Primary Side Switch in Bridge Topology VDSS RDS(on) max ID in Universal Input (36-75Vin) Isolated 100V 18m:@VGS = 10V 8.3A DC-DC Converters l Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC A Converters A 1 8 D S l Secondary Side Synchronous 2 7 Rectification Switch for 15Vout S D l Suitable for 48V Non-Isolated 3 6 S D Synchronous Buck DC-DC Applications 4 5 G D Benefits l Low Gate to Drain Charge to Reduce SO-8 Top View Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings l Max. Units VDS Drain-to-Source Voltage Parameter 100 V VGS Gate-to-Source Voltage 20 ID @ TA = 25C Continuous Drain Current, VGS @ 10V 8.3 ID @ TA = 70C Continuous Drain Current, VGS @ 10V 6.6 IDM Pulsed Drain Current 66 PD @TA = 25C Maximum Power Dissipation 2.5 W Linear Derating Factor 0.02 W/C 5.1 -55 to + 150 V/ns C c h dv/dt TJ Peak Diode Recovery dv/dt TSTG Storage Temperature Range Operating Junction and A Thermal Resistance Parameter RJL Junction-to-Drain Lead RJA Junction-to-Ambient (PCB Mount) ei Typ. Max. Units --- 20 C/W --- 50 Notes through are on page 8 www.irf.com 1 1/5/06 IRF7853PbF Static @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units V Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 --- --- VGS = 0V, ID = 250A V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- 0.11 --- V/C Reference to 25C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance --- 14.4 18 m VGS(th) Gate Threshold Voltage 3.0 --- 4.9 V VDS = VGS, ID = 100A IDSS Drain-to-Source Leakage Current --- --- 20 A VDS = 100V, VGS = 0V --- --- 250 IGSS Gate-to-Source Forward Leakage --- --- 100 Gate-to-Source Reverse Leakage --- --- -100 VGS = 10V, ID = 8.3A f VDS = 100V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units gfs Forward Transconductance 11 --- --- Qg Total Gate Charge --- 28 39 Qgs Gate-to-Source Charge --- 7.8 --- Qgd Gate-to-Drain ("Miller") Charge --- 10 --- Conditions S VDS = 25V, ID = 5.0A nC VDS = 50V ID = 5.0A VGS = 10V f RG Gate Resistance --- 1.4 td(on) Turn-On Delay Time --- 13 --- VDD = 50V tr Rise Time --- 6.6 --- ID = 5.0A td(off) Turn-Off Delay Time --- 26 --- tf Fall Time --- 6.0 --- VGS = 10V Ciss Input Capacitance --- 1640 --- VGS = 0V Coss Output Capacitance --- 310 --- Crss Reverse Transfer Capacitance --- 71 --- Coss Output Capacitance --- 1600 --- VGS = 0V, VDS = 1.0V, = 1.0MHz Coss Output Capacitance --- 180 --- VGS = 0V, VDS = 80V, = 1.0MHz Coss eff. Effective Output Capacitance --- 320 --- VGS = 0V, VDS = 0V to 80V --- ns RG = 6.2 f VDS = 25V pF = 1.0MHz g Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. --- Max. 610 Units mJ --- 5.0 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current --- --- 2.3 ISM (Body Diode) Pulsed Source Current --- --- 66 showing the integral reverse VSD (Body Diode) Diode Forward Voltage --- --- 1.3 V p-n junction diode. TJ = 25C, IS = 5.0A, VGS = 0V trr Reverse Recovery Time --- 45 68 ns Qrr Reverse Recovery Charge --- 84 130 nC ton Forward Turn-On Time 2 c MOSFET symbol A D G S f TJ = 25C, IF = 5.0A, VDD = 25V di/dt = 100A/s f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF7853PbF 100 100 10 BOTTOM TOP 1 0.1 0.01 4.5V 60s PULSE WIDTH Tj = 25C 0.1 1 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V BOTTOM 4.5V 1 60s PULSE WIDTH Tj = 150C 0.1 0.01 10 100 0.1 1 10 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100.0 100 2.5 RDS(on) , Drain-to-Source On Resistance TJ = 150C 10.0 (Normalized) ID, Drain-to-Source Current() 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TJ = 25C 1.0 VDS = 25V 60s PULSE WIDTH 0.1 3.0 4.0 5.0 6.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 7.0 ID = 8.3A VGS = 10V 2.0 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRF7853PbF 100000 VGS, Gate-to-Source Voltage (V) Coss = Cds + Cgd 10000 C, Capacitance (pF) 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Ciss 1000 Coss Crss 100 ID= 5.0A VDS= 50V VDS= 20V 12 8 4 0 10 1 10 0 100 20 100.0 ID, Drain-to-Source Current (A) 1000 TJ = 150C 10.0 1.0 30 40 50 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage ISD , Reverse Drain Current (A) 10 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) TJ = 25C OPERATION IN THIS AREA LIMITED BY R DS (on) 100 100sec 10 1msec 10msec 1 Tc = 25C Tj = 150C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS = 80V 16 1.2 0 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7853PbF 10 RD VDS VGS ID , Drain Current (A) 8 D.U.T. RG + -VDD 6 10V Pulse Width 1 s Duty Factor 0.1 % 4 Fig 10a. Switching Time Test Circuit 2 VDS 90% 0 25 50 75 100 125 150 TC , CaseTemperature (C) 10% VGS Fig 9. Maximum Drain Current vs. Ambient Temperature tr td(on) t d(off) tf Fig 10b. Switching Time Waveforms 100 Thermal Response ( Z thJA ) D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 J 0.1 R1 R1 J 1 R2 R2 2 1 R3 R3 3 2 AC Ri (C/W) i (sec) 7.016 0.00474 3 Ci= i/Ri Ci i/Ri 0.01 26.95 0.04705 16.04 2.3619 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = Pdm x Zthja + Ta SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 RDS (on), Drain-to -Source On Resistance (m) IRF7853PbF RDS (on) , Drain-to-Source On Resistance (m) 40 VGS = 10V TC = 125C 30 20 TC = 25C 10 40 ID = 5.0A 35 30 25 20 10 10 20 30 40 50 60 70 Fig 12. On-Resistance vs. Drain Current DUT 0 VCC QGS QGD Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 15V V(BR)DSS L VDS D.U.T RG IAS 20V tp 12 14 16 2500 VG Charge tp 10 QG VGS 1K 8 Fig 13. On-Resistance vs. Gate Voltage DRIVER + V - DD 0.01 Fig 15a&b. Unclamped Inductive Test circuit and Waveforms EAS, Single Pulse Avalanche Energy (mJ) L 6 VGS, Gate-to-Source Voltage (V) ID , Drain Current (A) 6 TJ = 25C 15 4 0 I AS TJ = 125C ID 0.23A 0.34A BOTTOM 5.0A TOP 2000 1500 1000 500 0 A 25 50 75 100 125 150 Starting TJ, Junction Temperature (C) Fig 15c. Maximum Avalanche Energy vs. Drain Current www.irf.com IRF7853PbF SO-8 Package Details D DIM B 5 A 8 6 7 6 H E 1 2 3 0.25 [.010] 4 A MIN .0532 .0688 1.35 1.75 A1 .0040 e e1 .0098 0.10 0.25 .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC 1.27 BAS IC .025 BAS IC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 C A1 8X b 0.25 [.010] A MAX b e1 6X MILLIMET ERS MAX A 5 INCHES MIN y 0.10 [.004] 8X L 8X c 7 C A B FOOT PRINT NOTES : 1. DIMENS IONING & T OLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONTROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS THE LENGT H OF LEAD FOR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAS T DIGIT OF THE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER www.irf.com 7 IRF7853PbF SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 49mH, RG = 25, IAS = 5.0A. When mounted on 1 inch square copper board, t 10 sec. Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. ISD 5.0A, di/dt 320A/s, VDD V(BR)DSS, TJ 150C. R is measured at TJ of approximately 90C. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.1/06 8 www.irf.com