NEC SILICON SWITCHING DIODES _e 1$2837,1S2838 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODES : COMMON CATHODE MINI MOLD PACKAGE DIMENSIONS in millimeters @ Low capacitance: C, = 1.1 pF TYP. @ High speed switching: t,, = 3.0 ns MAX. FEATURES LS @ Wide applications including switching, limitter, clipper. @ Double diode configuration assures economical use. ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Currents {Tg = 25 C) 182837 182838 Peak Reverse Voltage Veam 35 75 v DC Reverse Voltage VR 30 50 v 0 Marking Surge Current (1 is) * les 6.0 6.0 A < Z Surge Current (1 ys) lesm 4.0 4.0 A - : ] & Peak Forward Current* ley 450 450 mA x | i at. Peak Forward Current lem 300 300 mA Connection Bi | Average Rectified Current I 150 150 mA on veer Average Rectified Current ho 100 7100 mA Maximum Temperatures A Junction Ternperature Tj 125 125 c 2 om Storage Temperature Range T5tg ~55 to +125 56 to +125 c 1 : Thermal Resistance An0U tarking Junction to Ambient* Ren{j-al 1.0 1.6 *C/mW 1S ae Junction to Ambient Rehij-a} 0.67 0.67 CimWw * Both diodes loaded simultaneously. ELECTRICAL CHARACTERISTICS (T= 25 C) : 182837 (AS) 182838 (AG) CHARACTERISTIC SYMBOL MIN, TYP. MAX. MIN, T We. MAX, UNIT TEST CONDITIONS : ~ Vey | 0.67 1 | 0.67 10 v Ip =10mA Forward Voltage VE2 G.78 ww | Te 0.75 7 1A a] Vv ~ ip = 50 mA Veg 08) 12, / 085 | 1.2 Vo p= 100mA iq ar ca TP ~ BA. VR=30 Reverse Currant ia wren 4 moet roa ei i ncnnccnreensnann Capacitance cr ti | 40) ta a0 pr vette Reverse Recovery Time tre i 3.0 ~ il : | 3.0 ns | See Test Circuit. NEC cannot assume any responsibility for any circuits shown of represent that they are free from patent infringement NEC Corporation 1985 NEC Corporation 861$2837,1S2838 NEC sicrnon vevece TYPICAL CHARACTERISTICS (T, = 25 C} FORWARD CURRENT us. FORWARD VOLTAGE IpForward Current mA mA Ip -- Foward Current Ct- Terminal Capacitance --pF 182837 0 O O4 06 08 10 12 Vp -Forward Voltage V FORWARD CURRENT vs. FORWARD VOLTAGE 182838 0 02 O48 06 os 10 12 Ve -Forward Voltage -V TERMINAL CAPACITANCE vs. REVERSE VOLTAGE 1 $2837, 12838 20 10 05 1 2 5 10 20 50 100 Vp Reverse Voltage -V nA ig-Reverse Current ip--Reverse Current. nA try ~ Reverse Recovery Timens REVERSE CURRENT vs. REVERSE VOLTAGE 182837 0 16 20 30 40 50 Vp~ Reverse Voltage - Vv REVERSE CURRENT vs. REVERSE VOLTAGE 152838 5 10 20 30 40 50 Vr ~Reverse ValtageV REVEASE RECOVERY TIME vs. FORWARD CURRENT 1$2837, 182838 20 ~ a N 0 20 40 60 80 100 ip --Forward Current--mA 87NEC szcrron sevice 18$2837,1S2838 REVERSE RECOVERY TIME (1,,) TEST CIRCUIT 88 Friger Pulse * 0.02 .f DUT. Sampl i O-PLO. ampling Generator Oscilloscope (50 2) (50 9) 4 BkG a ine =O.1-h Ip 210 mA, VR~6.0 V, Ry faput Voi tage Waveform to Diode 100 & Output Current Wavetorm in Diode