LAE D MM 8254735 0014837 T oe Fale _ IRFF9130/9131/9132/9133 P-Channel Enhancement Mode Transistors SILICONIX INC T-34 ~1 TO-205AF BOTTOM VIEW. PRODUCT SUMMARY PART | Viaryoss {| "oso lo numBer | Wy a (A) IRFF9130 -100 0.30 -6.5 IRFF9131 -60 0.30 -6.5 1 DRAIN 2 GATE IRFF9132 -100 0.40 -5.5 3 SOURCE IRFF9133 -60 0.40 -.5 ABSOLUTE MAXIMUM RATINGS (Tc = 25C Unless Otherwise Noted)! IRFF PARAMETERS/TEST CONDITIONS SYMBOL | 9130 9131 9132 ; 9133 | UNITS Drain-Source Voltage Vos 100 60 100 60 Vv Gate-Source Voltage Ves +20 +20 20 +20 Continuous Drain Current To = 25C Ip ~ 65 65 55 5.5 To = 100C 41 41 3.5 3.5 A Pulsed Drain Current? tom 26 26 23 23 Avalanche Current (See Figure 9) la 6.5 6.5 5.5 5.5 Power Dissipation To = 25C Pp 25 25 25 25 Ww To = 100C 10 10 10 10 Operating Junction & Storage Temperature Range | Ty, Tsig -65 to 150 C Lead Temperature ('/_ from case for 10 sec.) Th 300 THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case Rinuc 5.0 K/iW Junction-to-Ambient Rina 175 Negative signs for current and voltage ratings have been omitted for the sake of clarity. 2Pulse width limited by maximum junction temperature (refer to transient thermal impedance data, Figure 11). 4-25718E D MM 4254795 OOL4835 1 my IRFF9130/9131/9132/9133 $F Siliconix incorporated ELECTRICAL CHARACTERISTICS (Ty = 25C Unless Otherwise Noted) T-39-19 P-Channel Device - Negative Signs Have Been Omitted for Clarity LIMITS PARAMETER SYMBOL TEST CONDITIONS TYP | MIN | MAX | UNIT STATIC Recacimtotge [fst ate | ow | Maemo io = anya ei fy Gate Threshold Voltage Vosan Vos Vas: Ip = 260 A 2.0 4.0 . Gate-Body Leakage less Vos = OV, Vag = 20V 100 | nA Zero Gate Voltage Drain Current loss Vos = Vierjoss: Vas = OV 250 | yA Vos = 0.8 X Visginss, Vas = OV, Tj = 125C 1000 Sireat [Reig gs [ooo Wo = Bon = 1 eis Drain-Source On-State | IRFF9130, 9131 Vas = 10V, Ip = 3A 0.25 0.30 Resistancal (RFF9192, 9133 | Tosco 0.30 040 | o IRFF9130, 9131 Ves = 10V, Ip = 3A 0.40 0.48 IRFF9432, 9133 Ty = 125C 0.48 0.64 Forward Transconductancet os Vos = 15Vi ly = 3A 28 25 s DYNAMIC : Input Capacitance Ciss 625 Output Capacitance Coss Vas = OV, Vos == 25V,f = 1 MHz 280 pF Reverse Transfer Capacitance iss 105 Total Gate Charge? Q, 226 15 45 Gate-Source Charge? Qos Vos = 0.8% Vienoss, Vas = 10V.Ip=65A 1 35 9 ac Gate-Drain Charge? Qoa . 13 20 Tum-On Delay Time? tagony 9 60 Rise Tine? t Von = 40V, RL = 13.0 30 140 | ns Tum-Oif Delay Time? taxon Ip 3A, Veen = 10V, Ra = 250 66 140 Fak Time? t 34 140 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (To = 25C) Continuous Current | {RFF9130, 9131 ls 65 IRFF9132, 9133 55 A Pulsed Current? IRFF9130, 9131 lout 26 . IRFF9132, 9133 22 Forward Voltage! IRFF9130, 9131 Vp. le = Is. Vas = OV 6.3 Vv IRFF9132, 9133 6.0 Reversa Recovery Time tr le = Ig, dig/dt = 100 A/ys 100 ns Reverse Recovery Charge On 0.4 yc Pulse test Pulse Width < 300 jisec, Duty Cycle < 2%. independent of ting temperature. Pulse width limited by maximum Junction temperature (refer to transient thermal Impedance data, Figure 11). 4-258.SILICONIX INC 16E D MM 4254735 0014439 3 mm SF Filconks IRFF9130/9131/9132/9133 TYPICAL CHARACTERISTICS (25C Unless Otherwise Specified) T- 39- 19 Figure 1, Output Characteristics Figure 2. Transfer Characteristics 12.8 TGg2 10 V 9V " as SV To= sc | / V r o = 10.0 = 8 2e'c = = 125C 5 5 i a 6 7.8 & 3 3 iy z 2 = .0 x 4 a a l ' 2 2.5 sv 2 2 4Vv 0 0 0 2 4 6 8 10 0 2 4 6 8 10 Vos - DRAIN-TO-SCURCE VOLTAGE (V) Veg - GATE-TO-SOURCE VOLTAGE (V) Figure 3. Transconductance Figure 4, On-Resistance 1.0 : ES = : w gS 0.8 g 8 & 2 Vag = 10 Vv | 3 hh 0.6 z mw 8 J Q 5S 04 a F : aeons EZ ge. ee reed 20V i % 0.2 . * 8 Q 0 0 5 10 15 20 25 0 5 10 15 20 25 Ip - DRAIN CURRENT (A) lp - DRAIN CURRENT (A) Figure 5. Capacitance Figure 6. Gate Charge 2500 15.0 = S 12.8 __ 2000 <0 & 3 9.6% ViBR) uw a 10.0 2 1500 oO 5 3 5 7.6 < 9 & 1000 c & iss i 8.0 t <q . oO Coss &00 ' 2.5 Crss g 0 Q 0 10 20 30 40 50 0 10 20 30 40 60 Vos ~ DRAIN-TO-SOURCE VOLTAGE (V) Qg - TOTAL GATE CHARGE (nC) 4-2594 s SILICONIX INC L8E D MM 6254735 OOL4S840 T IRFF9130/9131/9132/9133 $F Biliconix incorporated TYPICAL CHARACTERISTICS (Cont'd) , 7-39-19 Figure 7, On-Resistance ve. Junction Temperature Figure 8. Source-Drain Diode Forward Voltage 2.25 200 & 2.00 100 & < o 1,75 2 q i bh d 1.50 @ 3 w Ww or 1.26 QoQ 10 3 9g 2 = 1.00 Ln L 8 0.75 4 2 0.50 1 ~0 ~10 30 70 110 160 0 1 2 3 4 T, - JUNCTION TEMPERATURE (C) Vsp - SOURCE-TO-DRAIN VOLTAGE (VY) THERMAL RATINGS Figure 9, Maximum Avalanche and Drain Current vs. Case Temperature Figure 10. Safe Operating Area 200 . 100 =< IRFF9130, ~ < a 5 & 10 (RFF9132 33 3 8 Z 1 ' a = Pulse 0.1 9 26 50 75 100 125 150 1 10 100 600 Te - CASE TEMPERATURE (C) Vos - DRAIN-TO-SQURCE VOLTAGE (V) Operation in this area may be limited by Toston) Figure 11. Normalized Effective Transient Thermal Impedance, Junotion-to-Case a1 NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 19 1o+ to? 10 to"! 1 SQUARE WAVE PULSE DURATION (sec) 4-260