Vishay Siliconix
SUM90P10-19
New Product
Document Number: 73473
S-72337-Rev. D, 05-Nov-07
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1
P-Channel 100-V (D-S) MOSFET
FEATURES
• TrenchFET® Power MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Ω)ID (A)aQg (Typ)
- 100 0.019 at VGS = - 10 V - 90 128 nC
TO-263
SGD
Top View
Drain Connected to Tab
Ordering Information: SUM90P10-19-E3 (Lead (Pb)-free)
S
G
D
P-Channel MOSFE
T
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 10 s.
d. Maximum under Steady State conditions is 40 °C/W.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 100 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
ID
- 90
A
TC = 125 °C - 52
TA = 25 °C - 17b, c
TA = 125 °C - 9.9b, c
Pulsed Drain Current IDM - 90
Continuous Source-Drain Diode Current
TC = 25 °C IS
- 90
TA = 25 °C - 9b, c
Avalanche Current L = 0.1 mH IAS - 75
Single-Pulse Avalanche Energy EAS 281 mJ
Maximum Power Dissipation
TC = 25 °C
PD
375
W
TC = 125 °C 125
TA = 25 °C 13.6b, c
TA = 125 °C 4.5b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 811
°C/W
Maximum Junction-to-Case (Drain) Steady State RthJC 0.33 0.4
RoHS
COMPLIANT
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Document Number: 73473
S-72337-Rev. D, 05-Nov-07
Vishay Siliconix
SUM90P10-19
New Product
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 100 V
VDS Temperature Coefficient ΔVDS/TJ ID = - 250 µA - 111 mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ 7
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 2 - 4.5 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = - 100 V, VGS = 0 V - 1 µA
VDS = - 100 V, VGS = 0 V, TJ = 175 °C - 500
On-State Drain CurrentaID(on) V
DS ≥ 10 V, VGS = - 10 V - 90 A
Drain-Source On-State ResistancearDS(on) VGS = - 10 V, ID = - 20 A 0.0155 0.019 Ω
Forward Transconductanceagfs VDS = - 15 V, ID = - 20 A 70 S
Dynamicb
Input Capacitance Ciss
VDS = - 50 V, VGS = 0 V, f = 1 MHz
12000
pFOutput Capacitance Coss 700
Reverse Transfer Capacitance Crss 1670
Total Gate Charge Qg
VDS = - 50 V, VGS = - 10 V, ID = - 90 A
218 330
nCGate-Source Charge Qgs 55
Gate-Drain Charge Qgd 55
Gate Resistance Rgf = 1 MHz 3.5 Ω
Tur n - O n D e l ay Time td(on)
VDD = - 50 V, RL = 0.56 Ω
ID ≅ - 90 A, VGEN = - 10 V, Rg = 1 Ω
30 50
ns
Rise Time tr720 1100
Turn-Off Delay Time td(off) 125 190
Fall Time tf610 920
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTC = 25 °C - 90 A
Pulse Diode Forward CurrentaISM - 250
Body Diode Voltage VSD IS = - 20 A - 0.8 - 1.5 V
Body Diode Reverse Recovery Time trr
IF = - 20 A, di/dt = 100 A/µs, TJ = 25 °C
80 120 ns
Body Diode Reverse Recovery Charge Qrr 230 350 nC
Reverse Recovery Fall Time ta62 ns
Reverse Recovery Rise Time tb18
Document Number: 73473
S-72337-Rev. D, 05-Nov-07
www.vishay.com
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Vishay Siliconix
SUM90P10-19
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0
30
60
90
120
150
180
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
GS
= 10
4 V
3 V
5 V
ID - Drain Current (A)
rDS(on) - On-Resistance (Ω)
0.000
0.010
0.020
0.030
0 20406080100
VGS = 10 V
VGS = 6 V
Q
g
- Total Gate Charge (nC)
- Gate-to-Source Voltage (V)V
GS
0.0
2.0
4.0
6.0
8.0
10.0
0.0 40.0 80.0 120.0 160.0 200.0 240.0
VDS = 80 V
VDS = 50 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
10
20
30
40
012345
25 °C
T
C
= 125 °C
- 55 °C
VDS - Drain-to-Source Voltage (V)
0
3000
6000
9000
12000
15000
0 20406080100
Coss
Ciss
Crss
C - Capacitance (pF)
TJ - Junction Temperature (°C)
rDS(on) - (Normalized)
0.5
0.9
1.3
1.7
2.1
2.5
- 50 - 25 0 25 50 75 100 125 150 175
VGS = 10 V
ID = 20 A
VGS = 6 V
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Document Number: 73473
S-72337-Rev. D, 05-Nov-07
Vishay Siliconix
SUM90P10-19
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
Power Derating, Junction-to-Case
0.0 0.3 0.6 0.9 1.2 1.5
25 °C
TJ = 150 °C
100
10
1
VSD - Source-to-Drain Voltage (V)
- Source Current (A)IS
- 0.5
- 0.2
0.1
0.4
0.7
1.0
1.3
- 50 - 25 0 25 50 75 100 125 150 175
ID = 1 mA
TJ - Temperature (°C)
VGS(th) (V)
Power (W)
0
50
100
150
200
250
300
350
400
25 50 75 100 125 150 175
TC - Case Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Case (TC = 25 °C)
Safe Operating Area
0.00
0.02
0.04
0.06
0.08
0.10
12345678910
25 °C
150 °C
VGS - Gate-to-Source Voltage (V)
rDS(on) - Drain-to-Source on-Resistance (Ω)
Power (W)
Time (s)
0.0001 0.001 0.01 0.10 1
0
1000
2000
3000
4000
5000
6000
VDS - Drain-to-Source Voltage (V)
* V
GS > minimum VGS at which rDS(on) is specified
0.1 1 10 100
0.1
100
1000
10
1 ms
DC
100 µs
10 µs
10 ms
ID - Drain Current (A)
1
Single Pulse
T
C
= 25 °C
Limited by rDS(on)*
Document Number: 73473
S-72337-Rev. D, 05-Nov-07
www.vishay.com
5
Vishay Siliconix
SUM90P10-19
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73473.
Max Avalanche and Drain Current
vs. Case Temperature
0
30
60
90
120
02550 75 100 125 150 175
ID
- Drain Current (A)
TC - (°C)
Avalanche Current vs. Time
I
D
av - Peak Avalanche
C
urrent (A)
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1.0
TA - Time in Avalanche (s)
Normalized Thermal Transient Impedance, Junction-to-Case
ecnadepmI lamre
h
T tne
i
snarT evitceffE dez
i
lamroN
Square Wave Pulse Duration (s)
1
0.1
0.01
0.01 10.0001 0.1
0.001
0.02
Single
0.05
0.5
0.2
0.1
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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