1. Product profile
1.1 General description
Bidirectional ElectroStatic Discharge (ESD) protection diodes in a very small SOD323
(SC-76) SMD plastic package designed to protect one signal line from the damage
caused by ESD and other transients.
1.2 Features
1.3 Applications
1.4 Quick reference data
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in
SOD323
Rev. 02 — 20 August 2009 Product data sheet
nBidirectional ESD protection of one line nESD protection > 23 kV
nMax. peak pulse power: Ppp = 500 W nIEC 61000-4-2, level 4 (ESD)
nLow clamping voltage: V(CL)R = 26 V nIEC 61000-4-5 (surge); Ipp = 18 A
nUltra low leakage current: IRM < 0.09 µAnVery small SMD plastic package
nComputers and peripherals nData lines
nCommunication systems nCAN bus protection
nAudio and video equipment
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse stand-off voltage
PESD3V3L1BA - - 3.3 V
PESD5V0L1BA - - 5.0 V
PESD12VL1BA - - 12 V
PESD15VL1BA - - 15 V
PESD24VL1BA - - 24 V
Cddiode capacitance VR = 0 V;
f=1MHz
PESD3V3L1BA - 101 - pF
PESD5V0L1BA - 75 - pF
PESD12VL1BA - 19 - pF
PESD15VL1BA - 16 - pF
PESD24VL1BA - 11 - pF
PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 2 of 15
NXP Semiconductors PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
2. Pinning information
3. Ordering information
4. Marking
Table 2. Pinning
Pin Description Simplified outline Symbol
1 cathode 1
2 cathode 2 21
sym045
21
Table 3. Ordering information
Type number Package
Name Description Version
PESDxL1BA series SC-76 plastic surface mounted package; 2 leads SOD323
Table 4. Marking codes
Type number Marking code
PESD3V3L1BA AB
PESD5V0L1BA AC
PESD12VL1BA AD
PESD15VL1BA AE
PESD24VL1BA AF
PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 3 of 15
NXP Semiconductors PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
5. Limiting values
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform; see Figure 1.
[1] Device stressed with ten non-repetitive ESD pulses; see Figure 2.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Ppp peak pulse power 8/20 µs[1]
PESD3V3L1BA - 500 W
PESD5V0L1BA - 500 W
PESD12VL1BA - 200 W
PESD15VL1BA - 200 W
PESD24VL1BA - 200 W
Ipp peak pulse current 8/20 µs[1]
PESD3V3L1BA - 18 A
PESD5V0L1BA - 15 A
PESD12VL1BA - 5 A
PESD15VL1BA - 5 A
PESD24VL1BA - 3 A
Tjjunction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
ESD electrostatic discharge capability IEC 61000-4-2
(contact discharge) [1]
PESD3V3L1BA - 30 kV
PESD5V0L1BA - 30 kV
PESD12VL1BA - 30 kV
PESD15VL1BA - 30 kV
PESD24VL1BA - 23 kV
PESDxL1BA series HBM MIL-Std 883 - 10 kV
Table 7. ESD standards compliance
Standard Conditions
IEC 61000-4-2; level 4 (ESD); Figure 2 > 15 kV (air); > 8 kV (contact)
HBM MIL-Std 883; class 3 > 4 kV
PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 4 of 15
NXP Semiconductors PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5 Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t (µs)
0403010 20
001aaa630
40
80
120
IPP
(%)
0
e−t
100 % IPP; 8 µs
50 % IPP; 20 µs
001aaa631
IPP
100 %
90 %
t
30 ns 60 ns
10 %
tr = 0.7 ns to 1 ns
PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 5 of 15
NXP Semiconductors PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
6. Characteristics
Table 8. Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse stand-off voltage
PESD3V3L1BA - - 3.3 V
PESD5V0L1BA - - 5.0 V
PESD12VL1BA - - 12 V
PESD15VL1BA - - 15 V
PESD24VL1BA - - 24 V
IRM reverse leakage current see Figure 7
PESD3V3L1BA VRWM = 3.3 V - 0.09 2 µA
PESD5V0L1BA VRWM = 5.0 V - 0.01 1 µA
PESD12VL1BA VRWM = 12 V - < 1 50 nA
PESD15VL1BA VRWM = 15 V - < 1 50 nA
PESD24VL1BA VRWM = 24 V - < 1 50 nA
V(BR) breakdown voltage IR = 5 mA
PESD3V3L1BA 5.8 6.4 6.9 V
PESD5V0L1BA 7.0 7.6 8.2 V
PESD12VL1BA 14.2 15.9 16.7 V
PESD15VL1BA 17.1 18.9 20.3 V
PESD24VL1BA 25.4 27.8 30.3 V
Cddiode capacitance VR = 0 V; f = 1 MHz;
see Figure 5 and 6
PESD3V3L1BA - 101 - pF
PESD5V0L1BA - 75 - pF
PESD12VL1BA - 19 - pF
PESD15VL1BA - 16 - pF
PESD24VL1BA - 11 - pF
V(CL)R clamping voltage [1]
PESD3V3L1BA Ipp = 1 A - - 8 V
Ipp = 18 A - - 26 V
PESD5V0L1BA Ipp = 1 A - - 10 V
Ipp = 15 A - - 33 V
PESD12VL1BA Ipp = 1 A - - 20 V
Ipp = 5A - - 37 V
PESD15VL1BA Ipp = 1 A - - 25 V
Ipp = 5 A - - 44 V
PESD24VL1BA Ipp = 1 A - - 40 V
Ipp = 3 A - - 70 V
PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 6 of 15
NXP Semiconductors PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform; see Figure 1.
rdif differential resistance IR = 1 mA
PESD3V3L1BA - - 400 Ω
PESD5V0L1BA - - 80 Ω
PESD12VL1BA - - 200 Ω
PESD15VL1BA - - 225 Ω
PESD24VL1BA - - 300 Ω
Table 8. Characteristics
…continued
T
amb
= 25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 7 of 15
NXP Semiconductors PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
Tamb = 25 °C
tp = 8/20 µs exponential decay waveform; see Figure 1
(1) PESD3V3L1BA and PESD5V0L1BA
(2) PESD12VL1BA; PESD15VL1BA; PESD24VL1BA
Fig 3. Peak pulse power dissipation as a function of
pulse time; typical values Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values
Tamb = 25 °C; f = 1 MHz
(1) PESD3V3L1BA
(2) PESD5V0L1BA
Tamb = 25 °C; f = 1 MHz
(1) PESD12VL1BA
(2) PESD15VL1BA
(3) PESD24VL1BA
Fig 5. Diode capacitance as a function of reverse
voltage; typical values Fig 6. Diode capacitance as a function of reverse
voltage; typical values
006aaa066
103
102
104
PPP
(W)
10
tp (µs)
110
4
103
10 102
(1)
(2)
Tj (°C)
0 20015050 100
001aaa193
0.4
0.8
1.2
PPP
0
PPP(25°C)
VR (V)
054231
006aaa067
70
90
100
110
Cd
(pF)
50
60
80
(1)
(2)
VR (V)
0252010 155
006aaa068
8
12
4
16
20
Cd
(pF)
0
(1)
(2)
(3)
PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 8 of 15
NXP Semiconductors PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
(1) PESD3V3L1BA; PESD5V0L1BA
For PESD12VL1BA, PESD15VL1BA and PESD24VL1BA, IRM < 20 nA at 150 °C
Fig 7. Relative variation of reverse leakage current as a function of junction temperature; typical values
006aaa069
1
10
10−1
Tj (°C)
−100 150100050−50
IRM
IRM(25°C)
(1)
PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 9 of 15
NXP Semiconductors PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
Fig 8. ESD clamping test setup and waveforms
006aaa070
50 Ω
RZ
CZ1
2
DUT: PESDxL1BA
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network) clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 20 V/div; horizontal scale = 50 ns/div
vertical scale = 20 V/div; horizontal scale = 50 ns/div
GND
GND
450 ΩRG 223/U
50 Ω coax
ESD TESTER
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 10 of 15
NXP Semiconductors PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
7. Application information
The PESDxL1BA series is designed for bidirectional protection of one signal line from the
damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESDxL1BA
series may be used on lines where the signal polarity is above and below ground. The
PESDxL1BA series provides a surge capability of up to 500 W per line for a 8/20 µs
waveform.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the protection device as close to the input terminal or connector as possible.
2. The path length between the protection device and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductor.
5. Minimize all printed-circuit board conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer printed-circuit
boards, use ground vias.
Fig 9. Typical application: Bidirectional protection of one signal line
006aaa071
ground
PESDxL1BA
line to be protected
PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 11 of 15
NXP Semiconductors PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
8. Package outline
Fig 10. Package outline SOD323 (SC-76)
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOD323 SC-76
SOD323
03-12-17
06-03-16
Note
1. The marking bar indicates the cathode
UNIT A
mm 0.05
1.1
0.8 0.40
0.25 0.25
0.10 1.8
1.6 1.35
1.15 2.7
2.3 0.45
0.15
A1
max
DIMENSIONS (mm are the original dimensions)
Plastic surface-mounted package; 2 leads
01
(1)
21
2 mm
scale
bpc D E HDQ
0.25
0.15
Lpv
0.2
A
D
A
E
Lp
bp
detail X
A1c
Q
HDvA
M
X
PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 12 of 15
NXP Semiconductors PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
9. Packing information
[1] For further information and the availability of packing methods, see Section 12.
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
PESDxL1BA series SOD323 4 mm pitch, 8 mm tape and reel -115 -135
PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 13 of 15
NXP Semiconductors PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
10. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PESDXL1BA_SER_2 20090820 Product data sheet - PESDXL1BA_SER_1
Modifications: •This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•Figure 10 “Package outline SOD323 (SC-76)”: updated
PESDXL1BA_SER_1 20041004 Product data sheet - -
PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 14 of 15
NXP Semiconductors PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
11. Legal information
11.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 20 August 2009
Document identifier: PESDXL1BA_SER_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Application information. . . . . . . . . . . . . . . . . . 10
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Packing information. . . . . . . . . . . . . . . . . . . . . 12
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12 Contact information. . . . . . . . . . . . . . . . . . . . . 14
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
